Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
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TL;DR: In this article, X-ray diffraction results of as-etched porous silicon samples are presented that indicate a decrease of particle size and an increase of stress in conjunction with a blueshift of photoluminescence wavelength and absorption edge.
Abstract: Recently a quantum size effect was proposed to be responsible for the blue shift of optical absorption edge and photoluminescence peak wavelength as well as for the porous silicon (PS) formation itself. In the debate about the mechanism of light emission from PS a correlation between particle size and luminescence peak position would be a key test of the confinement approach. In this letter X-ray diffraction results of as-etched PS samples will be presented that indicate a decrease of particle size and an increase of stress in conjunction with a blueshift of photoluminescence wavelength and absorption edge.
89 citations
TL;DR: In this article, the size distribution, band gap energy, and photoluminescence of silicon nanocrystals embedded in SiO2 have been measured by direct and independent methods, and the results suggest that the dominant emission is a fundamental transition spatially located at the Si-SiO2 interface with the assistance of a local Si-O vibration.
Abstract: The size distribution, band gap energy, and photoluminescence of silicon nanocrystals embedded in SiO2 have been measured by direct and independent methods. The size distribution is measured by coupling high-resolution and conventional electron microscopy in special imaging conditions. The band gap is calculated from photoluminescence excitation measurements and agrees with theoretical predictions. Their correlation allows us to report the experimental Stokes shift between absorption and emission, which is 0.26±0.03 eV, independent of average size. This is almost exactly twice the energy of the Si–O vibration (0.134 eV). These results suggest that the dominant emission is a fundamental transition spatially located at the Si–SiO2 interface with the assistance of a local Si–O vibration.
89 citations
TL;DR: In this paper, the room temperature photoluminescence and structure of porous silicon was studied and it was shown that water vapor in ambient air gradually oxidized the surface of the porous silicon with developing Si-O-Si bonds.
Abstract: The room‐temperature photoluminescence and structure were studied concerning porous silicon which was exposed to ambient air. Water vapor in ambient air gradually oxidized the surface of the porous silicon with developing Si—O—Si bonds. This room‐temperature oxidation progressively replaced an unstable H‐passivated surface with a more stable O‐passivated surface, dramatically increasing the intensity of the photoluminescence.
89 citations
TL;DR: Self-selective electroless plating is a novel method to produce functional one-dimensional (1D) nanomaterials as mentioned in this paper, which utilizes the base substrate and surface metal deposition to produce the desired functional nanostructures.
Abstract: Self-selective electroless plating is a novel method to produce functional one-dimensional (1D) nanomaterials. The technique which is based on conventional electroless plating utilizes the base substrate and surface metal deposition to produce the desired functional nanostructures. Progress and advances in the past 6 years, including the production of Si nanowire arrays and concomitant noble metal dendrites by self-selective electroless plating, possible growth mechanisms, and future challenges are reviewed. The role of this approach pertaining to the future development of novel and unique nanodevices, which cannot be realized using traditional manufacturing techniques, is discussed. Intriguing recent results have shown that selective properties of the products can be obtained by controlling the electroless plating process and post surface treatment.
89 citations
TL;DR: The preparation of luminescent oxide-embedded germanium nanocrystals (Ge-NC/GeO2) by the reductive thermal processing of polymers derived from phenyl trichlorogermane yields air-stable polymers with a Ge:O ratio of 1:1.5.
Abstract: We report the preparation of luminescent oxide-embedded germanium nanocrystals (Ge-NC/GeO2) by the reductive thermal processing of polymers derived from phenyl trichlorogermane (PTG, C6H5GeCl3). Sol-gel processing of PTG yields air-stable polymers with a Ge:O ratio of 1:1.5, (C6H5GeO1.5)n, that thermally decompose to yield a germanium rich oxide (GRO) network. Thermal disproportionation of the GRO results in nucleation and initial growth of oxide-embedded Ge-NC, and subsequent reaction of the GeO2 matrix with the reducing atmosphere results in additional nanocrystal growth. This synthetic method affords quantitative yields of composite powders in large quantities and allows for Ge-NC size control through variations of the peak thermal processing temperature and reaction time. Freestanding germanium nanocrystals (FS-Ge-NC) are readily liberated from Ge-NC/GeO2 composite powders by straightfoward dissolution of the oxide matrix in warm water. Composites and FS-Ge-NC were characterized using thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), selected area electron diffraction (SAED), energy dispersive X-ray spectroscopy (EDX), and photoluminescence (PL) spectroscopy.
88 citations
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TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
1,039 citations
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Abstract: We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.
910 citations
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Abstract: Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces. These very inert surfaces are found to be almost completely covered by atomic hydrogen. Results using polarized radiation on both flat and stepped Si(111) and Si(100) surfaces reveal the presence of many chemisorption sites (hydrides) that indicate that the surfaces are microscopically rough, although locally ordered. In particular, the HF‐prepared Si(100) surface appears to have little in common with the smooth H‐saturated Si(100) surface prepared in ultrahigh vacuum.
588 citations
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Abstract: Hydrogen desorption kinetics from monohydride and dihydride species on crystalline-silicon surfaces were measured using transmission Fourier-transform infrared (FTIR) spectroscopy. The FTIR desorption measurements were performed in situ in an ultrahigh-vacuum chamber using high-surface-area porous-silicon samples. The kinetics for hydrogen desorption from the monohydride and dihydride species was monitored using the SiH stretch mode at 2102 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ and the ${\mathrm{SiH}}_{2}$ scissors mode at 910 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. Annealing studies revealed that hydrogen from the ${\mathrm{SiH}}_{2}$ species desorbed between 640 and 700 K, whereas hydrogen from the SiH species desorbed between 720 and 800 K. Isothermal studies revealed second-order hydrogen desorption kinetics for both the monohydride and dihydride surface species. Desorption activation barriers of 65 kcal/mol (2.82 eV) and 43 kcal/mol (1.86 eV) were measured for the monohydride and dihydride species, respectively. These desorption activation barriers yield upper limits of 84.6 kcal/mol (3.67 eV) and 73.6 kcal/mol (3.19 eV) for the Si-H chemical bond energies of the SiH and ${\mathrm{SiH}}_{2}$ surface species.
479 citations