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Journal ArticleDOI

Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

Leigh T. Canham
- 03 Sep 1990 - 
- Vol. 57, Iss: 10, pp 1046-1048
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TLDR
In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract
Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.

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Citations
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Journal ArticleDOI

Size-dependent oxygen-related electronic states in silicon nanocrystals

TL;DR: In this paper, a photoluminescence (PL) blueshift was observed in SiO2-embedded silicon nanocrystals with an initial diameters of 2.9-3.4 nm.
Journal ArticleDOI

Porous silicon in crystalline silicon solar cells: a review and the effect on the internal quantum efficiency

TL;DR: In this article, an analysis of internal quantum efficiency data obtained on both conventional and thin-film c-Si solar cells has been performed with the aim of describing the light diffusing behaviour of porous Si as well as investigating the surface passivating capabilities.
Journal ArticleDOI

Effect of thermal annealing and surface coverage on porous silicon photoluminescence

TL;DR: In this article, the effect of thermal annealing and surface coverage on porous silicon photoluminescence was studied in situ in an ultrahigh vacuum chamber, where the authors correlated simultaneously temperature, surface coverage, and photoluminance intensity.
Journal ArticleDOI

Fabrication of silicon cones and pillars using rough metal films as plasma etching masks

TL;DR: In this paper, a simple fabrication process was developed which allows the production of nanoscale silicon structures, with diameters as small as 5 nm, by using rough silver films as an etching mask for reactive ion etching.
References
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Journal ArticleDOI

Electrolytic shaping of germanium and silicon

TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
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Unusually low surface-recombination velocity on silicon and germanium surfaces.

TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
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Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology

TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Journal ArticleDOI

Hydrogen desorption kinetics from monohydride and dihydride species on silicon surfaces.

TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
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