Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
TL;DR: In this paper, free standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography using electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers.
Abstract: Indirect evidence is presented that free‐standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two‐dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
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TL;DR: A comprehensive view of the role of these zero-dimensional (0D) nanomaterials in the designing electrochemical sensors for determination of disease-related biomolecules, including tumor markers, inflammatory biomarkers, depression markers and archetypal biomarker in diabetes diagnosis is given.
85 citations
TL;DR: In this paper, the authors showed that low-dimensional silicon exhibits light amplification characteristics, non-linear optical effects, photon confinement in both one and two dimensions, photon trapping with evidence of light localization, and gas-sensing properties.
Abstract: Nanostructuring silicon is an effective way to turn silicon into a photonic material. In fact, low-dimensional silicon shows light amplification characteristics, non-linear optical effects, photon confinement in both one and two dimensions, photon trapping with evidence of light localization, and gas-sensing properties.
85 citations
TL;DR: Some of the recent contributions to the development of the growing field of silicon nanocrystals (ncSi) are outlined in order to stress the importance of continued study of ncSi as a green alternative to the archetypal semiconductor nanocrystal like CdSe, InAs, and PbS.
Abstract: Nanomaterials are becoming increasingly widespread in consumer technologies, but there is global concern about the toxicity of nanomaterials to humans and the environment as they move rapidly from the research laboratory to the market place. With this in mind, it makes sense to intensify the nanochemistry community's global research effort on the synthesis and study of nanoparticles that are purportedly "green". One potentially green nanoparticle that seems to be a most promising candidate in this context is silicon, whose appealing optical, optoelectronic, photonic, and biomedical attributes are recently gaining much attention. In this paper, we outline some of our recent contributions to the development of the growing field of silicon nanocrystals (ncSi) in order to stress the importance of continued study of ncSi as a green alternative to the archetypal semiconductor nanocrystals like CdSe, InAs, and PbS. While a variety of developments in synthetic methods, characterization techniques, and applications have been reported in recent years, the ability to prepare colloidally-stable monodisperse ncSi samples may prove to have the largest impact on the field, as it opens the door to study and access the tunable size-dependent properties of ncSi. Here, we summarize our recent contributions in size-separation methods to achieve monodisperse samples, the characterization of size-dependant property trends, the development of ncSi applications, and their potential impact on the promising future of ncSi.
84 citations
TL;DR: In this paper, the authors reported the observation of room-temperature and lowtemperature visible photoluminescence from nanocrystalline silicon (nc-Si) thin films produced by plasmaenhanced chemical vapor deposition (PECVD) through a gas discharge containing SiH4 diluted in Ar and H2.
Abstract: We report the observation of room-temperature and low-temperature visible photoluminescence from nanocrystalline silicon (nc-Si) thin films produced by plasma-enhanced chemical vapor deposition (PECVD) through a gas discharge containing SiH4 diluted in Ar and H2. The nanocrystalline silicon films were characterized using transmission electron microscopy, spectroscopic ellipsometry, infrared and Raman spectroscopy, and were examined for photoluminescence. Luminescent films consisted of dense silicon nanocrystals that grew in a columnar structure with approximately 20%–30% void space dispersed inside the film. Aside from having small crystalline silicon regions, the structure of the nc-Si films is different than that of porous Si, another luminescent Si material generally produced by electrochemical anodization. Yet, the photoluminescence spectra of the thin nc-Si films were found to be similar to those observed from porous silicon. This similarity suggests that the same mechanism responsible for light emis...
84 citations
TL;DR: In this article, a review of recent results on nanoporous semiconductors is presented, where both particulate (TiO 2 ) and crystalline (GaP, SiC) layers are considered.
84 citations
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TL;DR: In this article, the properties of electrolyte-semiconductor barriers are described, with emphasis on germanium, and the use of these barriers in localizing electrolytic etching is discussed.
Abstract: Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
1,039 citations
TL;DR: It is found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive, which has implications for the ultimate efficiency of silicon solar cells.
Abstract: We have found that a standard, widespread, chemical-preparation method for silicon, oxidation followed by an HF etch, results in a surface which from an electronic point of view is remarkably inactive. With preparation in this manner, the surface-recombination velocity on Si111g is only 0.25 cm/sec, which is the lowest value ever reported for any semiconductor. Multiple-internal-reflection infrared spectroscopy shows that the surface appears to be covered by covalent Si-H bonds, leaving virtually no surface dangling bonds to act as recombinatiuon centers. These results have implications for the ultimate efficiency of silicon solar cells.
910 citations
TL;DR: In this paper, multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces, and these very inert surfaces are found to be almost completely covered by atomic hydrogen.
Abstract: Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces. These very inert surfaces are found to be almost completely covered by atomic hydrogen. Results using polarized radiation on both flat and stepped Si(111) and Si(100) surfaces reveal the presence of many chemisorption sites (hydrides) that indicate that the surfaces are microscopically rough, although locally ordered. In particular, the HF‐prepared Si(100) surface appears to have little in common with the smooth H‐saturated Si(100) surface prepared in ultrahigh vacuum.
588 citations
TL;DR: In this article, the authors measured hydrogen desorption from monohydride and dihydride species on crystalline-silicon surfaces using transmission Fourier-transform infrared (FTIR) spectroscopy.
Abstract: Hydrogen desorption kinetics from monohydride and dihydride species on crystalline-silicon surfaces were measured using transmission Fourier-transform infrared (FTIR) spectroscopy. The FTIR desorption measurements were performed in situ in an ultrahigh-vacuum chamber using high-surface-area porous-silicon samples. The kinetics for hydrogen desorption from the monohydride and dihydride species was monitored using the SiH stretch mode at 2102 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ and the ${\mathrm{SiH}}_{2}$ scissors mode at 910 ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$, respectively. Annealing studies revealed that hydrogen from the ${\mathrm{SiH}}_{2}$ species desorbed between 640 and 700 K, whereas hydrogen from the SiH species desorbed between 720 and 800 K. Isothermal studies revealed second-order hydrogen desorption kinetics for both the monohydride and dihydride surface species. Desorption activation barriers of 65 kcal/mol (2.82 eV) and 43 kcal/mol (1.86 eV) were measured for the monohydride and dihydride species, respectively. These desorption activation barriers yield upper limits of 84.6 kcal/mol (3.67 eV) and 73.6 kcal/mol (3.19 eV) for the Si-H chemical bond energies of the SiH and ${\mathrm{SiH}}_{2}$ surface species.
479 citations