scispace - formally typeset
Proceedings ArticleDOI

Simulation and Analysis of Actuation Voltage of Electrostatically Actuated RF MEMS Cantilever and Fixed – Fixed Switches with Variable Beam Parameters

Reads0
Chats0
TLDR
In this article, the simulation and analysis of RF MEMS cantilever beam and fixed-fixed beam switches are presented, and the simulation results show that the Cantilever and fixed fixed beams follow approximately similar deflection pattern with fixed fixed beam deflecting more for applied actuation voltage in all the studies.
Abstract
Radio Frequency (RF) Microelectromechanical system (MEMS) switches are becoming more and more popular in the electronics industry. The main concern in using RF MEMS switch is its high actuation voltage. Thus the main focus in this paper is to obtain low actuation voltage. This paper presents the simulation and analysis of RF MEMS cantilever beam and Fixed – Fixed beam switches. RF MEMS switches simulated in this paper use electrostatic actuation method. Simulations were done using finite element modeling. Different designs and parameters such as gap between electrodes, beam thickness, beam length, and relative permittivity values of medium between electrodes were chosen for analyzing the deflection of beams for various actuation voltages. Perforations of different dimensions were made on both type of beams and the resulted deflections were studied. The simulation results show that the Cantilever and Fixed – Fixed beams follow approximately similar deflection pattern with Cantilever beam deflecting more for applied actuation voltage in all the studies.

read more

Citations
More filters
Proceedings ArticleDOI

Simulation and analysis of RF MEMS cantilever switch for low actuation voltage

TL;DR: In this article, the authors concentrate on the analysis and simulation of RF MEMS metal contact switch having a n-shaped cantilever beam to obtain the low actuation voltage.
Proceedings ArticleDOI

Effect of scaling on the performance of NEMS devices in switching applications

TL;DR: In this paper, the effect of technology scaling in the performance of electrical parameters of NEMS (Nano Electro Mechanical Switch) devices in switching applications has been discussed by modeling a typical Cantilever NEMS with fixed dimensions using Matlab simulation tool and then varying its beam parameters to characterize the effect on pull in voltage.
References
More filters
Book

RF MEMS: Theory, Design, and Technology

TL;DR: In this paper, the basics of RF MEMS and how to design practical devices and circuits are discussed, as well as expert tips for designers and a range of real-world applications.
Journal ArticleDOI

Electromechanical model of RF MEMS switches

TL;DR: In this paper, an improved model is introduced, considering simultaneously axial stress, residual stress, and fringing-field effect of the fixed-fixed bridge structure of RF MEMS switches.
Journal ArticleDOI

Robust Design of RF-MEMS Cantilever Switches Using Contact Physics Modeling

TL;DR: This paper presents the robust design optimization of an RF-MEMS direct contact cantilever switch for minimum actuation voltage and opening time, and maximum power handling capability, using a Strength Pareto Evolutionary Algorithm.

Review of low actuation voltage RF MEMS electrostatic switches based on metallic and carbon alloys

TL;DR: In this article, the authors focus on recent progress in reducing the actuation voltage of RF switches with an emphasis on a modular approach that gives acceptable design parameters, and a number of rules that should be considered in design and fabrication of low actuation RF MEMS switches are suggested.
Proceedings ArticleDOI

MEMS cantilever beam electrostatic pull-in model

TL;DR: In this article, two closed-form algebraic models describing electrostatic latch and release of micro cantilever beams are presented, based on beam theory with a fixed moment at the boundary to represent the electrostatic force and it predicts that electrostatic pull-in occurs at a beam tip displacement of 46% the initial actuator gap.