Simulation of Unsteady Small Heat Source Effects in Sub-Micron Heat Conduction
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...The LBM again shows a similar hot boundary temperature slip to that for the BDE but exhibit a higher temperature inside the domain exhibiting a more prominent ballistic behavior than BDE....
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...Both the Fourier and Cattaneo equations exhibited the diffusive temperature profiles which are in general agreement to those by the LBM and the BDE....
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...Results for the LBM are similar to those for the BDE, which itself is an approximation of the phonon BTE, with both approaches exhibiting clear diffusive behavior, owing to the large length and time scales....
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...In addition, the silicon dioxide layer has poor thermal conductivity and, as a result, most of the heat generated within the SOI device remains confined to the thin silicon film, making it susceptible to thermal failure under electrostatic discharge (ESD) events or even under normal switching activity during continuous operation [5,6]....
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...The BDE also captures the ballistic behavior as LBM with similar temperature jump at the hot boundary but exhibit a higher diffusive component resulting in more temperature drop across the film as compared to the LBM....
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..., appear in [39–47]....
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