Journal ArticleDOI
Site effect on the impurity levels in 4 H , 6 H , and 1 5 R SiC
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In this paper, the existence of site-dependent impurity levels caused by inequivalent sites in $4H, $6H, and $15R$ SiC has been verified from a study of configuration coordinate phonons.Abstract:
The existence of site-dependent impurity levels caused by inequivalent sites in $4H$, $6H$, and $15R$ SiC has been verified from a study of configuration coordinate phonons. From analyses of donor-acceptor pair and free-to-acceptor luminescence, two kinds of impurity levels of A1, Ga, and B acceptors and N donors substituted cubic-like and hexagonal-like sites are determined. All the impurities in cubic-like sites take deeper levels than those in hexagonal-like sites. Ratios of the ionization energies are approximately constant independent of polytypes and the kind of impurities, 1.0-1.08 for acceptors and 1.55-1.88 for donors, in spite of a wide range of the ionization energies. The origin of the site effect on the impurity level is explained by assuming the existence of a local dielectric constant and a local effective mass. Haynes' rule is found to apply relatively well to N donors in different sites in various polytypes SiC.read more
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Luminescence properties of defects in GaN
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Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
J.B. Casady,R.W. Johnson +1 more
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Step-controlled epitaxial growth of SiC: High quality homoepitaxy
TL;DR: In this paper, a step-controlled epitaxial growth of silicon carbide (SiC) is proposed, which utilizes step-flow growth on off-oriented SiC{0001} substrates, and the detailed growth mechanism is discussed.
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Diamond as an electronic material
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