Journal ArticleDOI
Size and temperature dependence of electrical resistance and thermoelectric power of bi2te2se1 thin films
V. Damodara Das,S. Selvaraj +1 more
Reads0
Chats0
TLDR
In this article, the thickness dependences of electrical resistivity and thermoelectric power of Bi2Te2Se1 of various thicknesses have been analyzed using the effective mean-free path model.Abstract:
Thin films of Bi2Te2Se1 of various thicknesses have been deposited on clean glass plates using the flash evaporation technique. Electrical resistance and thermoelectric power measurements have been carried out on these films in the temperature range 300–485 K. The thickness dependences of electrical resistivity and thermoelectric power of the films have been analyzed using the effective mean-free path model. The thickness dependence of activation energy of the films is explained by Seto’s polycrystalline model. Various material parameters such as mean-free path and Fermi energy have been calculated from the analysis of experimental data. The thermoelectric power factor of the films has been calculated using the measured electrical resistivity and thermoelectric power values.read more
Citations
More filters
Journal ArticleDOI
Thickness and temperature dependence of electrical properties of Bi2(Te0.1Se0.9)3 thin films
V. Damodara Das,S. Selvaraj +1 more
TL;DR: In this article, thin films of different thicknesses have been vacuum deposited onto clean glass plates held at room temperature using the flash evaporation technique in a vacuum of 2×10−5 Torr.
Journal ArticleDOI
Study of structural-, compositional-, and thickness-dependent thermoelectric and electrical properties of Bi93Sb7 alloy thin films
TL;DR: In this paper, the thickness and temperature dependences of thermoelectric power and electrical resistivity have been analyzed and the negative temperature coefficient of resistivity confirmed that the material is semiconducting in nature.
Journal ArticleDOI
Thickness dependence of electrical conductivity and thermo-electric power of Bi2.0Te2.7Se0.3/Bi0.4Te3.0Sb1.6 thermo-electric devices
TL;DR: In this paper, the electrical and thermo-electric properties of the bismuth telluride (BiTe)-based two-dimensional (2D) thermoelectric (TE) devices with different thin film thicknesses are analyzed systematically.
Journal ArticleDOI
Size- and temperature-dependent thermoelectric and electrical properties of Bi88Sb12 alloy thin films
TL;DR: In this article, thin films of Bi 88 Sb 12 of different thicknesses have been vacuum deposited on glass and silicon substrates using the flash evaporation method, and the structural characterization was carried out by X-ray diffraction (XRD) and transmission electron microscopy (TEM).
Journal ArticleDOI
Electrical conduction studies on Bi2(Te0.8Se0.2)3 chalcogenide thin films
V. Damodara Das,S. Selvaraj +1 more
TL;DR: In this article, structural characterization of bulk and thin semiconductors using XRD analysis was carried out using transmission electron microscopy and selected area electron diffraction techniques, and the mean free path of the electrons in this material was evaluated using this model.
References
More filters
Book
Elements of X-ray diffraction
TL;DR: In this article, the authors present a chemical analysis of X-ray diffraction by Xray Spectrometry and phase-diagram Determination of single crystal structures and phase diagrams.
Journal ArticleDOI
The electrical properties of polycrystalline silicon films
TL;DR: In this article, Boron doses of 1×1012-5×1015/cm2 were implanted at 60 keV into 1-μm-thick polysilicon films and Hall and resistivity measurements were made over a temperature range −50-250 °C.
Journal ArticleDOI
The mean free path of electrons in metals
TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
Journal ArticleDOI
Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces
A. F. Mayadas,M. Shatzkes +1 more
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.