Journal ArticleDOI
Size effect in the electrical properties of thin epitaxial bismuth films
Hajime Asahi,Akira Kinbara +1 more
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TLDR
The thickness dependence of the electrical properties of thin epitaxial bismuth films (of thickness 2-3 μm) was studied at 42 and 77 K in this article.About:
This article is published in Thin Solid Films.The article was published on 1980-03-03. It has received 18 citations till now. The article focuses on the topics: Grain boundary & Bismuth.read more
Citations
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Thermoelectric properties of Bi1−xSbx films with 0 < x ⩽ 0.3
F. Völklein,E. Kessler +1 more
TL;DR: In this article, the electrical conductivity, its temperature coefficient and the thermoelectric power of Bi 1− x Sb x films with 0 x ⩽ 0.3 and thickness from 20 to 400 nm were measured in the temperature range 80 −400 K.
Journal ArticleDOI
Temperature and thickness dependence of electrical and thermal transport coefficients of Bi1–xSbx films in an anisotropic, non-degenerate two-band model
F. Völklein,E. Kessler +1 more
TL;DR: In this article, the thickness and temperature dependences of electrical and thermal transport coefficients (e.g. electrical conductivity, thermoelectric power, thermal conductivity) of Bi1-xSbx films are described by a non-degenerated two-band model, considering the anisotropic elliptical band structure (many-valley model).
Journal ArticleDOI
Effect of annealing on the transport properties of an epitaxial film of bismuth
TL;DR: In this article, the authors studied the effect of annealing on the transport properties of an epitaxial bismuth film and found that the helium temperature resistivity decreased by a factor of 15.
Journal ArticleDOI
Quantum freeze‐out effect in a size‐limited intrinsic transport
Vijay K. Arora,Harold N. Spector +1 more
TL;DR: In this article, the size-limited resistivity of intrinsic thin films is calculated theoretically in the sizequantum limit (SQL), where the film thickness d is comparable to the de Broglie wavelength λD of the electrons (λD≥d).
Journal ArticleDOI
Electrodeposition conditions-dependent crystal structure, morphology and electronic properties of Bi films
Alexander Fedotov,Vladislav S. Shendyukov,Ludmila S. Tsybulskaya,Sergey S. Perevoznikov,Mengge Dong,Xiangxin Xue,Xiating Feng,M.I. Sayyed,M.I. Sayyed,Tatiana Zubar,Tatiana Zubar,Alex Trukhanov,Alex Trukhanov,Alex Trukhanov,Daria Tishkevich,Daria Tishkevich,Daria Tishkevich +16 more
TL;DR: In this paper, the electronic properties and structure of bismuth films obtained by electrodeposition from high-speed perchlorate electrolyte were characterized using X-Ray diffraction analysis, scanning electron microscopy, and electron backscattered diffraction.
References
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Journal ArticleDOI
The mean free path of electrons in metals
TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
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Electrical-Resistivity Model for Polycrystalline Films: the Case of Arbitrary Reflection at External Surfaces
A. F. Mayadas,M. Shatzkes +1 more
TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Journal ArticleDOI
Electrical Transport Properties of Thin Bismuth Films.
R. A. Hoffman,D.R. Frankl +1 more
TL;DR: In this paper, the authors measured the resistivity, Hall coefficient, and magnetoresistance coefficient of twinned bismuth films between 1.15 and 300 K and found that the surface scattering in these films is not specular, contrary to the findings of some other workers.
Journal ArticleDOI
Quantum size effect in thin bismuth films
TL;DR: In this paper, the dependence of the resistivity ρ magnetoresistance Δρ/ρ and Hall coefficient RH of thin Bi films (thickness d: 700-2000 A) on thickness and temperature was studied.
Journal ArticleDOI
Electromagnetic properties of thin epitaxial Bi films in magnetic fields up to 85 kG
TL;DR: In this paper, the authors reported that the transverse magnetoresistance had a tendency of saturation with increasing magnetic fields, which was attributed to the scattering at the grain-boundary planes parallel to the electric field.
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S. Kochowski,A. Opilski +1 more