Journal ArticleDOI
Solderless bonding with nanoporous copper as interlayer for high-temperature applications
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TLDR
It is demonstrated that the NPC sheets can be used to achieve the Cu Cu interconnection, which is a potential bonding technology for power devices operating at high temperature.About:
This article is published in Microelectronics Reliability.The article was published on 2018-01-01. It has received 6 citations till now. The article focuses on the topics: Nanoporous & Vickers hardness test.read more
Citations
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Journal ArticleDOI
Low temperature Cu bonding with large tolerance of surface oxidation
TL;DR: In this article, a low temperature all-Cu bonding method was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C.
Journal ArticleDOI
Reliability analysis of sintered Cu joints for SiC power devices under thermal shock condition
Yue Gao,Yue Gao,Shuhei Takata,Shuhei Takata,Chuantong Chen,Nagao Shijo,Suganuma Katsuaki,Amir Sajjad Bahman,Francesco Iannuzzo +8 more
TL;DR: In this article, the thermal shock reliability of sintered Cu joints on SiC power device application was investigated, and the results showed that sINTered Cu exhibited extremely high reliability during the thermal aging test in ambient atmosphere although inferior reliability was observed in vacuum.
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Oxidation-enhanced bonding strength of Cu sinter joints during thermal storage test
TL;DR: A special oxidationenhanced property of Cu sinter joints with particle paste was discovered during thermal storage test as discussed by the authors , which showed that the oxidation decreased the porosity of bonding layer by forming Cu2O shell structure on the sintered Cu microstructure, which enhanced the mechanical property of the sinter joint especially after storage time of 100 h.
Journal ArticleDOI
A low-temperature Cu-to-Cu interconnection method by using nanoporous Cu fabricated by dealloying electroplated Cu–Zn
TL;DR: In this article, the average resistivity, thermal conductivity, and shear strength of the bondlines were determined to be 4.12μΩ/cm, 176.49 W/m−1/K−1, and 18.78 MPa, respectively.
Journal ArticleDOI
Morphological Control of Nanoporous Copper Formed from Conversion Reaction Synthesis
Shijie Feng,Victoria Petrova,Adam A. Corrao,Shen Wang,Kesong Yang,Peter G. Khalifah,Ping-Yu Liu +6 more
TL;DR: The pore architecture of nanoporous copper (NP-Cu) plays a vital role in its technological applications as discussed by the authors , where an ionic Cu precursor (salt or oxide) is chemically reduced with n-butyllithium to form a Cu metal nanocomposite from which the Li-containing product is removed to form NP-Cu.
References
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Journal ArticleDOI
Lead-free Solders in Microelectronics
Mulugeta Abtew,Guna S Selvaduray +1 more
TL;DR: The most widely used Pb-free solders have the eutectic composition as mentioned in this paper, which has been identified as a major factor affecting alloy selection, since this will have a major impact on the other polymeric materials used in microelectronic assembly and encapsulation.
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The changing automotive environment: high-temperature electronics
TL;DR: In this article, the authors examine the motivation for higher temperature operation, the packaging limitations even at 125/spl deg/C with newer package styles, and conclude with a review of challenges at both the semiconductor device and packaging level as temperatures push beyond 125 /spl deg /C.
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Electronics Without Lead
TL;DR: Li et al. as mentioned in this paper reviewed the lead-free alloys and electrically conductive adhesives and concluded that no one leadfree interconnect material can serve as a substitute for the conventional tin-lead solder in all devices.
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Generalized Fabrication of Nanoporous Metals (Au, Pd, Pt, Ag, and Cu) through Chemical Dealloying
TL;DR: In this paper, the length scale of ligaments/channels in these nanoporous metals is associated with surface diffusion of more noble atoms, and increases with increasing diffusion coefficients in sequence: Pt/Pd < Au < Ag < Cu.
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A Review on Die Attach Materials for SiC-Based High-Temperature Power Devices
TL;DR: In this paper, the authors present a review of high-temperature power devices with a focus on the die attach materials operating at temperatures higher than 623 K (350 K).