scispace - formally typeset
Search or ask a question
Journal ArticleDOI

Solid State Surface Science

01 Aug 1970-Journal of The Electrochemical Society (The Electrochemical Society)-Vol. 117, Iss: 8
About: This article is published in Journal of The Electrochemical Society.The article was published on 1970-08-01. It has received 321 citations till now.
Citations
More filters
Journal ArticleDOI
TL;DR: In the data for the 63 elements, trends that occur simultaneously in both the columns and the rows of the periodic table are shown to be useful in predicting correct values and also for identifying questionable data.
Abstract: A new compilation, based on a literature search for the period 1969–1976, is made of experimental data on the work function. For these 44 elements, preferred values are selected on the basis of valid experimental conditions. Older values, which are widely accepted, are given for 19 other elements on which there is no recent literature, and are so identified. In the data for the 63 elements, trends that occur simultaneously in both the columns and the rows of the periodic table are shown to be useful in predicting correct values and also for identifying questionable data. Several illustrative examples are given, including verifications of predictions published in 1950.

3,569 citations

Journal ArticleDOI
TL;DR: In this paper, states of chemisorbed H that can be involved in the mechanism of the cathodic H2 evolution reaction (HER) at metals, specially Pt, and the reverse oxidation reaction (HOR), are examined.

1,507 citations

Journal ArticleDOI
TL;DR: In this paper, the dependence of the exchange current for the electrolytic evolution of hydrogen on metals (i 0,H ) on the work function is analyzed on the basic of a new list of polycrystalline surfaces.

1,474 citations

Journal ArticleDOI
TL;DR: In this article, the authors detect electroluminescence in single layer molybdenum disulfide (MoS2) field effect transistors built on transparent glass substrates.
Abstract: We detect electroluminescence in single layer molybdenum disulfide (MoS2) field-effect transistors built on transparent glass substrates. By comparing the absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8 eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.

870 citations

Journal ArticleDOI
TL;DR: The results show that single layer MoS2, a direct band gap semiconductor, could be promising for novel optoelectronic devices, such as two-dimensional light detectors and emitters.
Abstract: We detect electroluminescence in single layer molybdenum disulphide (MoS2) field-effect transistors built on transparent glass substrates. By comparing absorption, photoluminescence, and electroluminescence of the same MoS2 layer, we find that they all involve the same excited state at 1.8eV. The electroluminescence has pronounced threshold behavior and is localized at the contacts. The results show that single layer MoS2, a direct band gap semiconductor, is promising for novel optoelectronic devices, such as 2-dimensional light detectors and emitters.

816 citations