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Proceedings ArticleDOI

Solid State Transformer and MV grid tie applications enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs based multilevel converters

TL;DR: In this article, a transformerless Intelligent Power Substation (TIPS) is proposed as a 3-phase SST interconnecting 13.8 kV distribution grid with 480 V utility grid.
Abstract: Recently, medium voltage SiC devices have been developed which can be used for grid tie applications at medium voltage. Two such devices - 15 kV SiC IGBT and 10 kV SiC MOSFET have opened up the possibility of looking into different converter topologies for medium voltage distribution grid interface. These can be used in medium voltage drives, active filter applications or as the active front end converter for Solid State Transformers (SST). Transformer-less Intelligent Power Substation (TIPS) is one such application for these devices. TIPS is proposed as a 3-phase SST interconnecting 13.8 kV distribution grid with 480 V utility grid. The Front End Converter (FEC) of TIPS is made up of 15 kV SiC IGBTs. This paper focuses on the advantages, design considerations and challenges associated with the operation of converters using these devices keeping TIPS as the topology of reference.
Citations
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Journal ArticleDOI
TL;DR: This review comprehensively reviews the SST topologies suitable for different voltage levels and with varied stages, their control operation, and different trends in applications and provides recommendations for the improvement of future SST configuration and development.
Abstract: Solid-state transformer (SST) is an emerging technology integrating with a transformer power electronics converters and control circuitry. This paper comprehensively reviews the SST topologies suitable for different voltage levels and with varied stages, their control operation, and different trends in applications. The paper discusses various SST configurations with their design and characteristics to convert the input to output under unipolar and bipolar operation. A comparison between the topologies, control operation and applications are included. Different control models and schemes are explained. Potential benefits of SST in many applications in terms of controllability and the synergy of AC and DC systems are highlighted to appreciate the importance of SST technologies. This review highlights many factors including existing issues and challenges and provides recommendations for the improvement of future SST configuration and development.

175 citations

Journal ArticleDOI
TL;DR: In this paper, a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs is presented, which is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and corresponding experimental results are presented.
Abstract: Silicon carbide (SiC) MOSFET is capable of achieving better efficiency and better power density of power converters due to its low on-state resistance and lower switching losses compared to silicon (Si) Insulated Gate Bipolar Transistor. Operation of power converters at higher switching frequency using SiC devices allows reduction in filter size and hence improves the power to weight ratio of the converter. This paper presents switching characterization of 1200-V 100-A SiC MOSFET module and compares the efficiency of a two-level voltage source converter (2L-VSC) using SiC MOSFETs and Si IGBTs. Also, various design considerations of the 1200-V 100-A SiC MOSFET-based 2L-VSC including gate drive design, bus bar packaging, and thermal management have been elaborated. The designed and developed 2L-VSC is operated to supply 35 kVA load at 20-kHz switching frequency with dc bus voltage of 800 V and the corresponding experimental results are presented.

79 citations

Proceedings ArticleDOI
20 Mar 2016
TL;DR: In this paper, the design of a three-phase, 2-level, ≥ 2.3 kV, high frequency converter based on 10 kV SiC MOSEFT is explained.
Abstract: High speed variable frequency motor drives are required for marine applications, compressors for oil and gas industries, wind energy generation systems etc. Traditionally, low voltage high speed motor drives are used in such applications. This results in large currents at high power levels leading to large copper loss in the motor winding. Therefore, medium voltage (MV) drives are being considered. The silicon (Si) based MV drives need gears to increase the speed due to low switching frequency operation of Si devices in the converter. Gears reduce both efficiency and power density. With the development of 10 kV SiC MOSFET, high switching frequency at MV is possible, which has enabled the scope of high power density MV direct drive variable speed controlled motors. In this paper, the design of a three-phase, 2-level, ≥ 2.3 kV MV, high frequency converter based on 10 kV SiC MOSEFT is explained. Performance analysis is presented along with experimental demonstration.

38 citations

Proceedings ArticleDOI
20 Mar 2016
TL;DR: In this paper, an Intelligent Medium-voltage Gate Driver (IMGD) for 15kV SiC IGBT and 10kV MOSFET devices is presented.
Abstract: This paper presents an Intelligent Medium-voltage Gate Driver (IMGD) for 15kV SiC IGBT and 10kV SiC MOSFET devices. The high voltage-magnitude and high dv/dt(> 30kV/µs) of these MV SiC devices, pose design challenge in form of isolation and EMI. This problem is solved by development of a < 1pF isolation capacitance power-supply. But due to applied high stress, smaller short-circuit withstand time and the criticality of the application, these devices need to be monitored, well protected, active gate-driven and safely shut-down. This paper presents an EMI hardened IMGD built around a CPLD, sensing and optical interfacing unit. It provides advanced gate-driving, added protection and optically isolated state-monitoring features. The device operating conditions such as module temperature and Vds(on) can be data-logged. They can be used for diagnosis/prognosis purposes such as to predict failure and safely shut-down the system. This paper describes the functionality of different building blocks. The 15kV SiC IGBT has higher second switching slope above its punch-through level which is moderated without increasing losses by using digitally controlled active gate-driving. The shoot-through protection time can be reduced below withstand time by advanced gate driving. Soft turn-on and over-current triggered gate-voltage reduction helps reducing blanking time and quick turn-off reduces the protection response time. In this paper, the IMGD is high side tested at 5kV with device state monitoring on. The active gate-driving is tested at 6kV.

37 citations

Proceedings ArticleDOI
15 Mar 2015
TL;DR: In this paper, the authors summarized the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs.
Abstract: This paper summarizes the different steps that have been undertaken to design medium voltage power converters using the state-of-the-art 15 kV SiC N-IGBTs. The 11 kV switching characterization results, 11 kV high dv/dt gate driver validation, and the heat-run test results of the SiC IGBT at 10 kV, 550 W/cm2 (active area) have been recently reported as individual topics. In this paper, it is attempted to link all these individual topics and present them as a complete subject from the double pulse tests to the converter design, for evaluating these novel high voltage power semiconductor devices. In addition, the demonstration results of two-level H-Bridge and three-level NPC converters, both at 10 kV dc input, are being presented for the first-time. Lastly, the performance of two-chip IGBT modules for increased current capability and demonstration of three-level poles, built using these modules, at 10 kV dc input with sine-PWM and square-PWM modulation for rectifier and dc-dc stages of a three-phase solid state transformer are presented.

29 citations

References
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Journal ArticleDOI
TL;DR: This paper covers the high-power voltage-source inverter and the most used multilevel-inverter topologies, including the neutral-point-clamped, cascaded H-bridge, and flying-capacitor converters.
Abstract: This paper presents a technology review of voltage-source-converter topologies for industrial medium-voltage drives. In this highly active area, different converter topologies and circuits have found their application in the market. This paper covers the high-power voltage-source inverter and the most used multilevel-inverter topologies, including the neutral-point-clamped, cascaded H-bridge, and flying-capacitor converters. This paper presents the operating principle of each topology and a review of the most relevant modulation methods, focused mainly on those used by industry. In addition, the latest advances and future trends of the technology are discussed. It is concluded that the topology and modulation-method selection are closely related to each particular application, leaving a space on the market for all the different solutions, depending on their unique features and limitations like power or voltage level, dynamic performance, reliability, costs, and other technical specifications.

2,254 citations

Journal ArticleDOI
TL;DR: In this article, a 20-kHz 370-W dc/dc boost converter based on a 10-kV 4H-SiC DMOSFET and diodes is designed and experimentally demonstrated.
Abstract: Ten-kilovolt SiC MOSFETs are currently under development by a number of organizations in the United States, with the aim of enabling their applications in high-voltage high-frequency power conversions. The aim of this paper is to obtain the key device characteristics of SiC MOSFETs so that their realistic application prospect can be provided. In particular, the emphasis is on obtaining their losses in various operation conditions from the extensive characterization study and a proposed behavioral SPICE model. Using the validated MOSFET SPICE model, a 20-kHz 370-W dc/dc boost converter based on a 10-kV 4H-SiC DMOSFET and diodes is designed and experimentally demonstrated. In the steady state of the boost converter, the total power loss in the 15.45-mm2 SiC MOSFET is 23.6 W for the input power of 428 W. The characterization study of the experimental SiC MOSFET and the experiment of the SiC MOSFET-based boost converter indicate that the turn-on losses of SiC MOSFETs are the dominant factors in determining their maximum operation frequency in hard-switched circuits with conventional thermal management. Replacing a 10-kV SiC PiN diode with a 10-kV SiC JBS diode as a boost diode and using a small external gate resistor, the turn-on loss of the SiC MOSFET can be reduced, and the 10-kV 5-A SiC MOSFET-based boost converter is predicted to be capable of a 20-kHz operation with a 5-kV dc output voltage and a 1.25-kW output power by the PSpice simulation with the MOSFET model. The low losses and fast switching speed of 10-kV SiC MOSFETs shown in the characterization study and the preliminary demonstration of the boost converter make them attractive in high-frequency high-voltage power-conversion applications.

329 citations

Proceedings ArticleDOI
28 Oct 2013
TL;DR: In this article, the performance of the 15 kV n-IGBT has been evaluated up to 11 kV. This is the highest switching characterization voltage ever reported on a single power semiconductor device.
Abstract: The 4H-SiC n-IGBT is a promising power semiconductor device for medium voltage power conversion. Currently, Cree has successfully built 15 kV n-IGBTs. These IGBTs are pivotal for the smart grid power conversion systems and medium voltage drives. The need for complex multi-level topologies or series connected devices can be eliminated, while achieving reduced power loss, by using the SiC IGBT. In this paper, characteristics of the 15 kV n-IGBT have been reported for the first time. The turn-on and turn-off transitions of the 15 kV, 20 A IGBT have been experimentally evaluated up to 11 kV. This is highest switching characterization voltage ever reported on a single power semiconductor device. The paper includes static characteristics up to 25 A (forward) and 12 kV (blocking). The dependency of the power loss with voltage, current and temperature are provided. In addition, the basic converter design considerations using this ultrahigh voltage IGBT for high power conversion applications are presented. Also, a comparative evaluation is reported with an IGBT with thicker field-stop buffer layer as a means to show flexibility in choosing the IGBT design parameters based on the power converter frequency and power rating specification. Finally, power loss comparison of the IGBTs and MOSFET is provided to consummate the results for a complete reference.

93 citations

Journal ArticleDOI
TL;DR: In this paper, the authors compared hard-driven gate-turn-off thyristors (IGCTs) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter.
Abstract: This paper compares hard-driven gate-turn-off thyristors (IGCTs) and high-power insulated gate bipolar transistor (IGBT) modules in a two-level pulsewidth modulation inverter. The structure, fundamental operation and specific characteristics of the considered devices are shown. Simulations enable a loss comparison of IGCTs and IGBTs in a 1.14 MVA inverter at switching frequencies of f/sub s/=250 Hz/500 Hz. The evaluation of device characteristics is the basis for a derivation of potential applications.

79 citations

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