Solution-Processed Bootstrapped Organic Inverters Based on P3HT With a High- $k$ Gate Dielectric Material
TL;DR: In this article, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT).
Abstract: In this letter, the integration of a high-k gate dielectric has been demonstrated for achieving low-operating-voltage organic field-effect transistors (OFETs) and circuits based on solution-processed poly(3-hexylthiophene) (P3HT). We have successfully demonstrated all-p-type organic circuits based on P3HT operating at below 4 V supply voltage. The switching behavior is improved by using the bootstrapping technique, with the bootstrapped inverter showing good results with a dc gain (A v) of - 1.7 and V OH and V OL values of 3.3 and 0.35 V, respectively. The output swing of the bootstrapped inverter is improved by about 40% when compared to that of simple all-p-type inverters, as demonstrated by using experimental characterizations.
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TL;DR: In this article, the performance of p-and n-type conducting polymer and small molecule organic semiconductors are reviewed primarily in terms of field effect mobility, current on/off ratio, and operating voltage for various OTFT structures.
Abstract: Organic thin film transistor (OTFT) based device modeling and circuit application is a rapidly emerging research area. Taking cognizance of this fact, our paper reviews various basic to advanced OTFT structures, their performance parameters, materials of individual OTFT layers, their molecular structures, OTFT charge transport phenomena, and fabrication techniques. The performance of p- and n-type conducting polymer and small molecule organic semiconductors are reviewed primarily in terms of field effect mobility, current on/off ratio, and operating voltage for various OTFT structures. Moreover, different organic/inorganic materials for realizing the dielectric layer, electrodes, and the substrate in an OTFT are analyzed. Some of the compact models that are essential for predicting and optimizing the device performance are described that takes into account the mobility enhancement factor and channel length modulation. A detailed study of the single gate, dual gate, vertical channel, and cylindrical gate O...
268 citations
TL;DR: In this article, the authors present a deep insight into different organic/inorganic materials used for the dielectric layer, electrodes and substrate for thin film transistors (TFTs).
Abstract: This paper reviews recent advancements in the field of organic electronics. Performance of p- and n-type conducting polymers and small molecule organic semiconductors is presented primarily in terms of mobility and current on/off ratio. Moreover, it presents a deep insight into different organic/inorganic materials used for the dielectric layer, electrodes and substrate for thin film transistors (TFTs). The electrical characteristics and performance parameters of single and dual gate structures are compared. In addition, performance dependence of organic TFT (OTFT) is discussed on the basis of contact resistance, channel length and thickness of the active layer. The paper thoroughly discusses several important applications of OTFTs including inverter, organic static random access memory, radio frequency identification tag and DNA sensors. It also includes several limitations and future prospects of organic electronics technology.
125 citations
TL;DR: This Feature Article discusses synthetic methods for a particular group of hyperbranched polymers, detailed optical and electronic characterization of this group, and the design criteria for achieving a good combination of high dielectric constant and minimum loss in such materials.
Abstract: Hyperbranched and dendritic architectures have been targeted for various applications such as sensing, drug delivery, optical limiting, and light harvesting. One interesting development in this area has focused on utilizing the existence of long-range delocalization in hyperbranched structures to achieve high dielectric constants. In this Feature Article, we will review the creation and development of this concept, and we highlight our recent research progress in this aspect. In particular, we discuss (1) synthetic methods for a particular group of hyperbranched polymers; (2) detailed optical and electronic characterization of this group of hyperbranched polymers, revealing the design criteria for achieving a good combination of high dielectric constant and minimum loss in such materials; and (3) the importance and potential applications of these materials.
51 citations
TL;DR: The DG-OTFT device performs better than SG-OT FT mainly in terms of mobility, on–off current ratio and sub-threshold slope, and bootstrapping technique is applied to the dual gate inverters that further boosts the noise margin and gain for DLL and ZVLL configurations.
46 citations
TL;DR: In this paper, the static and dynamic behavior of dual-gate organic thin film transistors (DG-OTFTs) based universal logic gates using the Atlas 2-D numerical device simulator is analyzed.
Abstract: This research paper analyzes the static and dynamic behavior of dual-gate organic thin film transistors (DG-OTFTs) based universal logic gates using the Atlas 2-D numerical device simulator. The electrical characteristics and performance parameters of pentacene based DG-OTFT is evaluated and verified with respect to the reported experimental results. The NAND and NOR logic gate circuits are realized using $$p$$ p -type designs in diode-load logic (DLL) and zero- $$V_{gs}$$ V g s -load logic (ZVLL). The results show that the logic functions in ZVLL configuration outperforms the DLL ones mainly in terms of noise margin, gain and voltage swing; however, there is a trade-off in terms of speed. The ZVLL NAND gate demonstrates an increment of 16 and 32 % in voltage swing and noise margin, respectively in comparison to the DLL one. Besides this, the gain also increases by 1.5 times in ZVLL mode. On the contrary, the DLL configuration demonstrates a significant reduction of 64 % in the propagation delay in comparison to the ZVLL. Similarly, NOR gate shows an increment of 24 and 30 % in voltage swing and noise margin, respectively under ZVLL configuration. However, the propagation delay for DLL NOR configuration is one-fourth of that of its ZVLL counterpart.
37 citations
References
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TL;DR: It is shown that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of ∼1 kHz in clocked sequential complementary circuits.
Abstract: Thin-film transistors based on molecular and polymeric organic materials have been proposed for a number of applications, such as displays and radio-frequency identification tags. The main factors motivating investigations of organic transistors are their lower cost and simpler packaging, relative to conventional inorganic electronics, and their compatibility with flexible substrates. In most digital circuitry, minimal power dissipation and stability of performance against transistor parameter variations are crucial. In silicon-based microelectronics, these are achieved through the use of complementary logic-which incorporates both p- and n-type transistors-and it is therefore reasonable to suppose that adoption of such an approach with organic semiconductors will similarly result in reduced power dissipation, improved noise margins and greater operational stability. Complementary inverters and ring oscillators have already been reported. Here we show that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of approximately 1 kHz in clocked sequential complementary circuits.
1,291 citations
"Solution-Processed Bootstrapped Org..." refers background in this paper
...Organic complementary metal oxide semiconductors and their logic circuits based on p- and n-type organic semiconductors have already been reported [4], [5]....
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TL;DR: In this article, an electrophoretic ink based on the microencapsulation of an electrophic dispersion was used to solve the lifetime issues and allow the fabrication of a bistable electronic display solely by means of printing.
Abstract: It has for many years been an ambition of researchers in display media to create a flexible low-cost system that is the electronic analogue of paper. In this context, microparticle-based displays1,2,3,4,5 have long intrigued researchers. Switchable contrast in such displays is achieved by the electromigration of highly scattering or absorbing microparticles (in the size range 0.1–5 μm), quite distinct from the molecular-scale properties that govern the behaviour of the more familiar liquid-crystal displays6. Microparticle-based displays possess intrinsic bistability, exhibit extremely low power d.c. field addressing and have demonstrated high contrast and reflectivity. These features, combined with a near-lambertian viewing characteristic, result in an ‘ink on paper’ look7. But such displays have to date suffered from short lifetimes and difficulty in manufacture. Here we report the synthesis of an electrophoretic ink based on the microencapsulation of an electrophoretic dispersion8. The use of a microencapsulated electrophoretic medium solves the lifetime issues and permits the fabrication of a bistable electronic display solely by means of printing. This system may satisfy the practical requirements of electronic paper.
1,210 citations
"Solution-Processed Bootstrapped Org..." refers background in this paper
...O RGANIC field-effect transistors (OFETs) are receiving significant attention because of their potential applications in digital switches, backplanes for flat panel displays, and radio-frequency (RF) identification tags [1]–[3]....
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TL;DR: This work demonstrates a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene), which operate with supply voltages of less than 2 V yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics.
Abstract: Organic thin film transistors (TFTs) are of interest for a variety of large-area electronic applications, such as displays, sensors and electronic barcodes. One of the key problems with existing organic TFTs is their large operating voltage, which often exceeds 20 V. This is due to poor capacitive coupling through relatively thick gate dielectric layers: these dielectrics are usually either inorganic oxides or nitrides, or insulating polymers, and are often thicker than 100 nm to minimize gate leakage currents. Here we demonstrate a manufacturing process for TFTs with a 2.5-nm-thick molecular self-assembled monolayer (SAM) gate dielectric and a high-mobility organic semiconductor (pentacene). These TFTs operate with supply voltages of less than 2 V, yet have gate currents that are lower than those of advanced silicon field-effect transistors with SiO2 dielectrics. These results should therefore increase the prospects of using organic TFTs in low-power applications (such as portable devices). Moreover, molecular SAMs may even be of interest for advanced silicon transistors where the continued reduction in dielectric thickness leads to ever greater gate leakage and power dissipation.
801 citations
"Solution-Processed Bootstrapped Org..." refers methods in this paper
...Lowvoltage operation has also been achieved by the use of sub20 nm organic dielectrics, using self-assembled monolayers [20]....
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TL;DR: In this paper, a Pentacene-based thin-film integrated circuit with polymeric shadow masks and powered by near-field coupling at radio frequencies of 125 kHz and above 6 MHz has been demonstrated.
Abstract: Pentacene-based thin-film integrated circuits patterned only with polymeric shadow masks and powered by near-field coupling at radio frequencies of 125 kHz and above 6 MHz have been demonstrated. Sufficient amplitude modulation of the rf field was obtained to externally detect a clock signal generated by the integrated circuit. The circuits operate without the use of a diode rectification stage. This demonstration provides the basis for more sophisticated low-cost rf transponder circuitry using organic semiconductors.
753 citations
"Solution-Processed Bootstrapped Org..." refers background in this paper
...O RGANIC field-effect transistors (OFETs) are receiving significant attention because of their potential applications in digital switches, backplanes for flat panel displays, and radio-frequency (RF) identification tags [1]–[3]....
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TL;DR: In this article, the authors summarize some of the important recent materials-related research on organic transistors and point out future needs in this area, focusing on the stability and processability of the active materials.
Abstract: There has been tremendous progress in the area of organic electronic materials and devices recently. However, many challenges and problems remain to be addressed for practical applications of such materials and devices. This article seeks to summarize some of the important recent materials-related research on organic transistors and point out future needs in this area. Special emphasis is directed towards the stability and processability of the active materials.
374 citations
"Solution-Processed Bootstrapped Org..." refers background in this paper
...Although high-performance solution-processed n-type OFETs in N2 ambient are reported in the literature [13], p-type materials are preferred for fabrication of low-cost organic circuits because of their stability and higher mobility values [14]....
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