Spinel, YbFe2O4, and Yb2Fe3O7 types of structures for compounds in the In2O3 and Sc2O3A2O3BO systems [A: Fe, Ga, or Al; B: Mg, Mn, Fe, Ni, Cu, or Zn] at temperatures over 1000°C
TL;DR: In this article, a revised classification for the crystal structures of AB 2 O 4 compounds is presented, based upon the coordination numbers of constituent A and B cations, and the revised classification is based on the spinel structure.
About: This article is published in Journal of Solid State Chemistry.The article was published on 1985-12-01. It has received 1035 citations till now. The article focuses on the topics: Spinel.
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Patent•
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1,501 citations
Patent•
25 Sep 2013
TL;DR: In this paper, a connection terminal portion is provided with a plurality of connection pads which are part of the connection terminal, each of which includes a first connection pad and a second connection pad having a line width different from that of the first one.
Abstract: An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.
1,136 citations
TL;DR: In this paper, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method, which exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature.
Abstract: With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposition method. The resulting films exhibited an optical bandgap of 2.8-3.0 eV, and an n-type electric conductivity of 170-400 Scm−1 at room temperature, displaying a slight dependence on the value of m, in which the carrier density was 1019-1020 cm−3 the electron mobili ty was 12-20 cm2 V−1 s−1 showing no p n anomaly between Hall and Seebeck coefficients. The conductivity displayed no significant dependence on the temperature ranging from 10 to 300 K. X-ray diffraction, transmission electron microscopy and extended X-ray absorption fine structure measurements confirmed that the films were amorphous phases. A combined use of bremsstrahlung isochromat spectroscopy and ultraviolet photoelectron spectroscopy revealed that the conduction band tail had a large dispersion and that the Fermi level was located at the conduction band edge. The...
1,102 citations
Patent•
17 Jan 2006
TL;DR: In this article, the authors propose a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
Abstract: To provide a semiconductor device and a display device which can be manufactured through a simplified process and the manufacturing technique. Another object is to provide a technique by which a pattern of wirings or the like which is partially constitutes a semiconductor device or a display device can be formed with a desired shape with controllability.
1,043 citations
Patent•
19 Nov 2002
TL;DR: In this article, a light-emitting element and a driver circuit of the light emitting element are provided over different substrates to prevent a point defect and a line defect in forming a light emitting device, thereby improving the yield.
Abstract: To prevent a point defect and a line defect in forming a light-emitting device, thereby improving the yield. A light-emitting element and a driver circuit of the light-emitting element, which are provided over different substrates, are electrically connected. That is, a light-emitting element and a driver circuit of the light-emitting element are formed over different substrates first, and then electrically connected. By providing a light-emitting element and a driver circuit of the light-emitting element over different substrates, the step of forming the light-emitting element and the step of forming the driver circuit of the light-emitting element can be performed separately. Therefore, degrees of freedom of each step can be increased, and the process can be flexibly changed. Further, steps (irregularities) on the surface for forming the light-emitting element can be reduced than in the conventional technique.
479 citations
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113 citations
TL;DR: In this paper, the standard free energy of formation of YbFe2O4, Yb2Fe3O7,YbFeO3, and Yb3Fe5O12 was determined to be −100.38, −158.17, and −283.40 kcal/mole.
45 citations
TL;DR: YbiFeaCb, which is closely related to YbFe204, crystallizes in the space group P&3/mmc as mentioned in this paper, and the structure consists of alternating layers of YbC>3/2, FeC> 3/2 and Fe20s/2· The oxygen ions are arranged like a sort of closest packing of spheres.
Abstract: YbiFeaCb, which is closely related to YbFe204, crystallizes in the space group P&3/mmc. The unit-cell dimensions of the examined sample are a = 3.476 and c = 28.43 A; Ζ = 2, Dx = 6.98 g cm 3 . The structure consists of alternating layers of YbC>3/2, FeC>3/2 and Fe20s/2· The oxygen ions are arranged like a sort of closest packing of spheres. The Yb ion is surrounded by six oxygen ions octahedrally. From the structural view-point, there are two different sorts of Fe ions, Fe + and Fein the sense of an average. Each kind of Fe ions is surrounded by five oxygen ions forming a trigonal-bipyramidal coordination polyhedron.
36 citations
TL;DR: In this article, a series of new compounds Ln(GaM2+)O4 and ln(AlMn2+O4) having a layer structure were successfully prepared and the synthesis conditions and the unit cell parameters for 23 compounds were determined.
24 citations