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Journal ArticleDOI

Stable Hydrogen Evolution from CdS-Modified CuGaSe2 Photoelectrode under Visible-Light Irradiation

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TLDR
The photoelectrochemical properties of CuGaSe2 modified by deposition of a thin CdS layer showed high stability under the observed reaction conditions and evolved hydrogen continuously for more than 10 days.
Abstract
The photoelectrochemical properties of CuGaSe2 modified by deposition of a thin CdS layer were investigated. The CdS layer formed a p–n junction on the surface of the electrode, improving its photoelectrochemical properties. There was an optimal CdS thickness because of the balance between the charge separation effect and light absorption by CdS. CdS-deposited CuGaSe2 showed high stability under the observed reaction conditions and evolved hydrogen continuously for more than 10 days.

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Citations
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Journal ArticleDOI

Recent advances in semiconductors for photocatalytic and photoelectrochemical water splitting

TL;DR: This introductory review covers the fundamental aspects of photocatalytic and photoelectrochemical water splitting and recent advances in the water splitting reaction under visible light will be presented with a focus on non-oxide semiconductor materials to give an overview of the various problems and solutions.
Journal ArticleDOI

Visible-light driven heterojunction photocatalysts for water splitting – a critical review

TL;DR: Li et al. as mentioned in this paper provided an overview of the concept of heterojunction construction and more importantly, the current state-of-the-art for the efficient, visible-light driven junction water splitting photo(electro)catalysts reported over the past ten years.
Journal ArticleDOI

Engineering heterogeneous semiconductors for solar water splitting

TL;DR: In this paper, a critical review highlights some key factors influencing the efficiency of heterogeneous semiconductors for solar water splitting (i.e. improved charge separation and transfer, promoted optical absorption, optimized band gap position, lowered cost and toxicity, and enhanced stability and water splitting kinetics).
Journal ArticleDOI

Semiconducting materials for photoelectrochemical energy conversion

TL;DR: Recently developed semiconductor materials for the direct conversion of light into fuels are scrutinized with respect to their atomic constitution, electronic structure and potential for practical performance as photoelectrodes in PEC cells.
Journal ArticleDOI

Recent advances in metal sulfides: from controlled fabrication to electrocatalytic, photocatalytic and photoelectrochemical water splitting and beyond

TL;DR: A variety of strategies such as structural tuning, composition control, doping, hybrid structures, heterostructures, defect control, temperature effects and porosity effects on metal sulfide nanocrystals are discussed and how they are exploited to enhance performance and develop future energy materials.
References
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Journal ArticleDOI

Solar Water Splitting Cells

TL;DR: The biggest challenge is whether or not the goals need to be met to fully utilize solar energy for the global energy demand can be met in a costeffective way on the terawatt scale.
Journal ArticleDOI

Photoelectrochemical water splitting using a Cu(In,Ga)Se2 thin film

TL;DR: In this article, the effects of surface modification and reaction conditions on the photoelectrochemical properties of polycrystalline Cu(In,Ga)Se2 (CIGS) thin films for water splitting were studied.
Journal ArticleDOI

H2 Evolution from Water on Modified Cu2ZnSnS4 Photoelectrode under Solar Light

TL;DR: In this paper, surface modifications with Pt, CdS, and TiO2 enhanced the incident photon-to-current conversion efficiency of CZTS thin film electrode for H2 production from water by three orders of magnitude to 40% (λ= 600 nm).
Journal ArticleDOI

Direct evidence of a buried homojunction in Cu(In,Ga)Se2 solar cells

TL;DR: In this paper, the built-in electrical potential of CIGS solar cells was measured quantitatively and resolved spatially using scanning Kelvin probe microscopy, indicating that the CdS and ZnO layers of the device structure are inactive for the collection of photoexcited carriers.
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