Journal ArticleDOI
Static model for organic field-effect transistors including both gate-voltage-dependent mobility and depletion effect
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TLDR
In this paper, a physics-based model of organic field effect transistors (OFETs) with poly(3-hexylthiophene-2,5-diyl) as the semiconductor was investigated.Abstract:
Physics-based models of organic field-effect transistors (OFETs) which can be used for computer-aided simulation of organic integrated circuits were investigated. For this purpose hybrid OFETs with poly(3-hexylthiophene-2,5-diyl) as the semiconductor were fabricated and characterized. The differential drain-source resistance reveals the need for a unified consideration of a gate-voltage-dependent mobility and of the depletion effect. We avoid neglecting the capacitance of the insulator and the semiconductor which would have otherwise introduced restrictions. The analytic modeling yields a compact static equivalent circuit diagram.read more
Citations
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Journal ArticleDOI
Analytical Model of Trapping Effects in Organic Thin-Film Transistors
C. Erlen,Paolo Lugli +1 more
TL;DR: In this paper, an analytical model for organic thin-film transistors that accounts for the influence of trap states on the current voltage characteristics is presented, as the subthreshold regime sensitively reacts to the presence of traps.
Journal ArticleDOI
A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors
R. M. Meixner,Holger Göbel,Haidi Qiu,C. Ucurum,W. Klix,R. Stenzel,F. A. Yildirim,W. Bauhofer,Wolfgang H. Krautschneider +8 more
TL;DR: In this article, a PSPICE model for organic thin-film transistors employing poly(3hexylthiophene-2,5-diyl) (P3HT) is derived.
Journal ArticleDOI
Nernst-Planck-Poisson analysis of Electrolyte-Gated Organic Field-Effect Transistors
Najmeh Delavari,Klas Tybrandt,Magnus Berggren,Benoît Piro,Vincent Noël,Giorgio Mattana,Igor Zozoulenko +6 more
TL;DR: In this article, an EGOFET model is proposed utilizing the Nernst-Planck-Poisson equations to describe, on equal footing, both the polymer and the electrolyte regions of the device configuration.
Herstellung und Charakterisierung wellenlängenselektiver organischer Feldeffekttransistoren
TL;DR: In this paper, a vorliegende Arbeit beschreibt die Herstellung, die Charakterisierung, and the Modellierung von organischen Feldeffekttransistors with wellenlangenselektiven Eigenschaften.
References
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Journal ArticleDOI
Soluble and processable regioregular poly(3‐hexylthiophene) for thin film field‐effect transistor applications with high mobility
TL;DR: In this paper, the electrical characteristics of field effect transistors using solution cast regioregular poly(3-hexylthiophene) are discussed and the authors demonstrate that both high field effect mobilities (ca. 0.045 cm2/V) and relatively high on/off current ratios (greater than 103) can be achieved.
Journal ArticleDOI
Solution-processed ambipolar organic field-effect transistors and inverters.
Eduard J. Meijer,Eduard J. Meijer,Dago M. de Leeuw,Sepas Setayesh,E. van Veenendaal,Bart-Hendrik Huisman,Paul W. M. Blom,Jan C. Hummelen,Ullrich Scherf,T. M. Klapwijk +9 more
TL;DR: In this article, the authors demonstrate that hole transport and electron transport are both generic properties of organic semiconductors and combine the organic ambipolar transistors into functional CMOS-like inverters.
Journal ArticleDOI
Theory of the field-effect mobility in amorphous organic transistors
TL;DR: In this paper, the field effect mobility in an organic thin-film transistor was studied theoretically. And the authors applied the theory to describe the experiments by Brown et al. on solution-processed amorphous organic transistors, made from polythienylene vinylene and from a small molecule (pentacene).
Journal ArticleDOI
Field-effect transistors made from solution-processed organic semiconductors
TL;DR: In this article, the authors present results on metal-insulator-semiconductor field effect transistors using conjugated organic semiconductors which can be processed from solution.
Journal ArticleDOI
Charge carrier transport in organic semiconductors
TL;DR: In this article, a brief review is given on different experimental methods that can either directly measure charge carrier mobilities, or at least lead to an estimate, for high purity single crystals, a steep increase of mobilities towards low temperature with the consequence of nonlinear transport and final velocity saturation at elevated electric fields has been traced back to temperature-dependent electron and hole masses approaching the free electron mass at low temperature.
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