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Journal ArticleDOI

Statistical Compact Model Extraction: A Neural Network Approach

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TLDR
ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters.
Abstract
A technique for extracting statistical compact model parameters using artificial neural networks (ANNs) is proposed. ANNs can model a much higher degree of nonlinearity compared to existing quadratic polynomial models and, hence, can even be used in sub-100-nm technologies to model leakage current that exponentially depends on process parameters. Existing techniques cannot be extended to handle such exponential functions. Additionally, ANNs can handle multiple input multiple output relations very effectively. The concept applied to CMOS devices improves the efficiency and accuracy of model extraction. Results from the ANN match the ones obtained from SPICE simulators within 1%.

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Citations
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Journal ArticleDOI

Prediction of Process Variation Effect for Ultrascaled GAA Vertical FET Devices Using a Machine Learning Approach

TL;DR: An accurate and efficient machine learning (ML) approach which predicts variations in key electrical parameters using process variations (PVs) from ultrascaled gate-all-around (GAA) vertical FET (VFET) devices with the same degree of accuracy, as well as improved efficiency compared to a 3-D stochastic TCAD simulation.
Journal ArticleDOI

Sensitivity Analysis Based on Neural Network for Optimizing Device Characteristics

TL;DR: This letter shows an important role in filling the gap between the emerging device proposal and the development of the SPICE model and the results are compared with a general linear model (GLM).
Proceedings ArticleDOI

Analysis on Process Variation Effect of 3D NAND Flash Memory Cell through Machine Learning Model

TL;DR: This work investigated process variation effect of 3D NAND flash memory cell, especially about geometric variation using a machine learning (ML) model, which has multi-input and multi-output (MIMO) structure and deep hidden layers to train and predict complex data of process variation.
Journal ArticleDOI

Bayesian Optimization of MOSFET Devices Using Effective Stopping Condition

Bokyeom Kim, +1 more
- 01 Jan 2021 - 
TL;DR: In this paper, the effective stopping condition (ESC) for Bayesian optimization of MOSFET devices was investigated to boost the efficiency and reliability of optimization, which resulted in up to 87.6% and up to 47% reduction of required training data compared with the fixed iteration method and the tiny constant method, respectively.
References
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Proceedings ArticleDOI

A neural-network-based local inverse mapping technique for building statistical DMOS models

TL;DR: A methodology to circumvent the time consuming standard approach for statistical model development by means of training a neural network, which enables a Monte-Carlo model to be generated.
Proceedings ArticleDOI

Process Capability Improvement in a Student Run Integrated Circuit Factory

TL;DR: RIT has received a five-year grant from IBM through an IBM Total Quality Management (TQM) Competition as discussed by the authors, which includes a project entitled "Six Sigma Process Capability in Student-Run IC Factory".