Structural Characterization and Ultraviolet Photoresponse of GaN Nanodots Grown by Molecular Beam Epitaxy
Mahesh Kumar,Mahesh Kumar,Basanta Roul,Basanta Roul,Thirumaleshwara N. Bhat,Mohana K. Rajpalke,S. B. Krupanidhi +6 more
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TLDR
In this paper, the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE) were explored.Abstract:
The present work explores the electrical transport and UV photoresponse properties of GaN nanodots (NDs) grown by molecular beam epitaxy (MBE). Single-crystalline wurtzite structure of GaN NDs is verified by X-ray diffraction and transmission electron microscopy (TEM). The interdigitated electrode pattern was created and current-voltage (I-V) characteristics of GaN NDs were studied in a metal-semiconductor-metal configuration. Dark I-V characteristics of lateral grown GaN NDs obeyed the Frenkel-Poole emission model, and the UV response of the device was stable and reproducible with on/off. The responsivity of the detectors is found to be 330 A/W with an external quantum efficiency of 1100%. (C) 2012 The Japan Society of Applied Physicsread more
Citations
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Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector.
Arun Malla Chowdhury,Greeshma Chandan,Rohit Pant,Basanta Roul,Basanta Roul,Deependra Kumar Singh,Karuna Kar Nanda,S. B. Krupanidhi +7 more
TL;DR: A self-powered, broad band and ultrafast photodetector based on n+-InGaN/AlN/n-Si(111) heterostructure is demonstrated and a relation between the open circuit voltage and the responsivity has been realized.
Journal ArticleDOI
Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target
TL;DR: Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001) substrates by laser molecular beam epitaxy (LMBE) were investigated in the range of 500-750 °C.
Journal ArticleDOI
Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
TL;DR: In this article, a non-polar epi-GaN film of usable quality was developed on an m-plane sapphire substrate using plasma assisted molecular beam epitaxy, which resulted in a nonpolar (10-10) orientation and a semipolar (11-22) orientation.
Journal ArticleDOI
Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures
Rohit Pant,Deependra Kumar Singh,Arun Malla Chowdhury,Basanta Roul,Basanta Roul,Karuna Kar Nanda,S. B. Krupanidhi +6 more
TL;DR: In this article, the authors focus on the advancements in III-nitride-based photodetectors and their promising potentials for self-powered, broadband, and ultrafast photodetsectors using hybrid III-nodes/2D interfaces.
Journal ArticleDOI
Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy
Sunil Singh Kushvaha,Prabir Pal,A. K. Shukla,Amish G. Joshi,Govind Gupta,Mahesh Kumar,S.P. Singh,Bipin Kumar Gupta,D. Haranath +8 more
TL;DR: In this article, the effect of growth temperature on defect states of GaN epitaxial layers on sapphire (0001) substrates using plasma assisted molecular beam epitaxy was investigated.
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