Structure and optical properties of dc reactive magnetron sputtered zinc oxide films
TL;DR: In this paper, the influence of oxygen pressure and substrate temperature on the structure and optical properties of the zinc oxide films were systematically investigated and optimised the deposition parameters to prepare single phase zinc oxide film with preferred (002) orientation.
Abstract: Zinc oxide films were deposited on glass substrates in argon and oxygen atmosphere by dc reactive magnetron sputtering using a metallic zinc target. The influence of oxygen pressure and substrate temperature on the structure and optical properties of the films were systematically investigated and optimised the deposition parameters to prepare single phase zinc oxide films with preferred (002) orientation. At an optimum oxygen pressure of 1x10 -3 mbar and substrate temperature of 663 K, the films exhibited an optical transmittance of 83% with a band gap of 3.28 eV.
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TL;DR: In this paper, thin films of ZnO have been prepared on glass substrates at different thicknesses by spray pyrolysis technique using 0.2 M aqueous solution of zinc acetate.
205 citations
TL;DR: In this paper, transparent conducting zinc oxide thin films were prepared by spray pyrolytic decomposition of zinc acetate onto glass substrates with different thickness, and the crystallographic structure of the films was studied by X-ray diffraction.
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138 citations
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132 citations
TL;DR: In this article, the influence of substrate temperature on the film structural properties was investigated and it was found that a substrate temperature of 100°C and target/substrate distance about 50 mm, very low gas pressures of 3.35×10−3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.
Abstract: ZnO thin films were deposited on sapphire, glass and silicon substrates by r.f. magnetron sputtering using metallic zinc target. A systematic study has been made of the influence of substrate temperature on the film structural properties. They exhibited a c-axis orientation of below 0.5° full width at half maximum of X-ray rocking curves, an extremely high resistivity of 1010 Ω cm and an energy gap of 3.3 eV at room temperature. It was found that a substrate temperature of 100 °C and target/substrate distance about 50 mm, very low gas pressures of 3.35×10−3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity.
128 citations
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TL;DR: In this article, a rigorous expression for the transmission of a thin absorbing film on a transparent substrate is manipulated to yield formulae in closed form for the refractive index and absorption coefficient.
Abstract: The rigorous expression for the transmission of a thin absorbing film on a transparent substrate is manipulated to yield formulae in closed form for the refractive index and absorption coefficient. A procedure is presented to calculate the thickness to an accuracy of better than 1% with similar accuracies in the values of n. A method to correct for errors due to slit width is also given. Various formulae to calculate the absorption coefficient accurately over almost three orders of magnitude are discussed. Only data from the transmission spectrum are used and the procedure is simple, fast and very accurate. All formulae are in closed form and can be used on a programmable pocket calculator.
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TL;DR: In this paper, the influence of post-deposition annealing on indium oxide films was investigated and the homogeneity throughout the film thickness with respect to micro-crystallinity and stress was paid to the homogeneous properties.
122 citations
TL;DR: In this paper, the effects of the thermal energy and the kinetic energy of the sputtered species on the growth of ZnO thin films were investigated, by varying the substrate temperature, chamber pressure, and radio frequency power.
Abstract: ZnO thin films were deposited on a R-plane sapphire substrate. The effects of the thermal energy and the kinetic energy of the sputtered species on the growth of ZnO thin films were investigated. By varying the substrate temperature, chamber pressure, and radio frequency power, the structure of ZnO thin films was transformed from polycrystalline to epitaxial on R-plane sapphire substrates. High quality (110) ZnO epitaxial thin films were grown at the condition of 400 °C, 250 W, and 5 mTorr. According to reflection high energy electron diffraction and reflection electron microscopy observations, there were no double diffraction distortion and any other patterns. Its surface roughness observed by atomic force microscopy was about 27 nm.
77 citations
TL;DR: In this article, the authors showed that the availability of oxygen during sample preparation has a significant affect on the slow photoresponse of the resulting polycrystalline ZnO films, while films sputter-deposited with a low partial pressure of oxygen tend to have the c axis perpendicular to the substrate and may have no detectable d.c.
67 citations