Studies on n-CdTe/p-CuInSe2 heterojunctions
15 Apr 1986-Journal of Applied Physics (American Institute of Physics)-Vol. 59, Iss: 8, pp 2866-2869
TL;DR: In this article, a theoretical energy-band diagram for the heterojunction was constructed, and the theoretical and experimental barrier potentials were compared, and a theoretical analysis of the I•V characteristics and the photospectral response of the heterjunctions were studied.
Abstract: n‐CdTe/p‐CuInSe2 heterojunctions were fabricated by flash evaporating p‐CuInSe2 on indium‐doped CdTe single crystals. I‐V characteristics and the photospectral response of the heterojunctions were studied. On illumination appreciable change in the I‐V characteristics and photovoltaic effects were observered. A theoretical energy‐band diagram for the heterojunction was constructed, and the theoretical and experimental barrier potentials were compared.
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TL;DR: In this article, the photovoltaic effect and good rectifying behavior have been observed in a heterostructure fabricated by depositing the La 0.7 Sr 0.3 MnO 3 film on a Si substrate.
10 citations
TL;DR: In this article, the I-V characteristics of the CdS/InP heterojunctions in dark condition were studied in the 298-350 K temperatures range for charge transport mechanism investigation.
Abstract: n-CdS/p-InP solar cells have been prepared by deposition of n-CdS thin films using thermal evaporation technique onto p-type InP . The I–V characteristics of the CdS/InP heterojunctions in dark condition were studied in the 298–350 K temperatures range for charge transport mechanism investigation. It has been established that in the entire temperatures range, the charge transport mechanism is determined by recombination processes in the depletion region. The CdS/InP heterojunction solar cells obtained using this technique and characterized under illumination condition have showed a conversion efficiency of 11% at Isc = 10 mA/cm2, Voc = 0.7 V.
5 citations
TL;DR: In this article, two different n-CdS/p-Cu2S solar cells were prepared by evaporating Cu at different substrate temperatures (200 K and 300 K) by vacuum evaporation method on a single crystal CdS semiconductor.
Abstract: In this study, two different n-CdS/p-Cu2S solar cells were prepared by evaporating Cu at different substrate temperatures (200 K and 300 K) by vacuum evaporation method on a single crystal CdS semiconductor. Field emission scanning electron microscope images showed that the Cu layer obtained at a temperature of 200 K was composed of nanoparticles in accordance with the soliton growth mechanism. Cu film thickness was determined as 395 ∓ 0.76 nm at 300 K substrate temperature and 187 ∓ 0.45 nm at 200 K substrate temperature. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the solar cells were examined for 12 weeks in dark and light environments. Open-circuit voltage (V oc), short-circuit current (I sc), maximum power (P max), filling factor and efficiency (η) were calculated from I–V measurements. For the prepared solar cells, the highest efficiency value was obtained in the 7th week (η= 0.1360) at 200 K substrate temperature, while it was obtained in the 5th week (η = 0.0384) at 300 K substrate temperature. From C–V measurements, donor density (N d) and barrier potential (V bi) were calculated. The solar cell produced at 200 K substrate temperature has higher donor density (1st week 2.99 × 1016 cm−3) and barrier potential values (12th week 0.411 V). At the end of the 12-week period, the deterioration rate of solar cells created at 200 K and 300 K substrate temperatures was 51% and 94%, respectively.
2 citations
TL;DR: In this article, the authors proposed La2/3Sr1/3MnO3, which is a 3-Sr-1-mnO-3mO3.
Abstract: 利用脉冲激光沉积的方法在Si（100）氧化成SiO2的基片上制备了（La2/3Sr1/3MnO3）x/（ZnO）1-x混合物薄膜,研究了薄膜的磁电阻和伏安特性.X射线衍射分析表明,除了衬底SiO2的衍射峰以外,分别出现了La2/3Sr1/3MnO3（101）的衍射峰和ZnO（002）的衍射峰,且它们形成了两相共存体系.实验表明：x=0.3的混合物薄膜表现为半导体导电特性,而x=0.4的样品则出现了典型的金属-绝缘相变.所制备的样品表现出了低场磁电阻效应和非线性伏安特性.在0.7T磁场的作用下,x=0.3的样品在温度为60K时取得的最大磁电阻值为28.8%.通过对伏安关系拟合表明,在La2/3Sr1/3MnO3和ZnO颗粒之间存在一定的耗尽层,且产生了界面缺陷态.
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14,205 citations
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TL;DR: In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.
Abstract: The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (n-type) germanium appears to shift to lower energy values.
970 citations
TL;DR: In this article, it is shown that atmospheric absorption causes a shift in the solar spectrum which changes the value of the optimum forbidden energy gap between the limits 1.2 ev < 1.6 ev.
Abstract: The theory of the photovoltaic effect is used to predict the characteristics of a semiconductor which would operate with an optimum efficiency as a photovoltaic solar energy converter. The existence of such an optimum material results from the interaction between the optical properties of the semiconductor which determine what fraction of the solar spectrum is utilized and its electrical properties which determine the maximum efficiency of conversion into electricity. Considerable attention is devoted to the effect of the forbidden energy gap (EG) of the semiconductor. It is shown that atmospheric absorption causes a shift in the solar spectrum which changes the value of the optimum forbidden energy gap between the limits 1.2 ev
879 citations