Studies on piezo coefficients of PLD and sol-gel grown PZT thin film for devices
TL;DR: In this article, the effect of electrical contact poling processes on the ferroelectric and piezoelectric properties of sol-gel and pulsed laser-deposited PZT thin films has been investigated as a function of the voltage.
Abstract: The effect of electrical (DC) contact poling processes on the ferroelectric and piezoelectric properties of sol–gel and pulsed laser-deposited PZT thin films has been investigated as a function of ...
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TL;DR: A model distinct from the NC concept is proposed, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate stack FETs.
Abstract: Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In this work, stepwise internal potential jumps in a metal/FE/metal/PE/metal system observed near the coercive voltage of the FE layer are reported through carefully designed DC measurements. The relationship of the internal potential jumps with the steep SS in FETs is also experimentally confirmed by connecting a FE capacitor to a simple metal-oxide-semiconductor FET. On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs. Negative capacitance (NC) effects that could allow steep subthreshold swing (SS) in field-effect transistors (FETs) are still controversially discussed. Here the authors propose a model distinct from the NC concept, taking into account domain flips in multiple-domain ferroelectric/paraelectric gate stack FETs.
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TL;DR: In this article, the authors reviewed the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelectric response for non-ferroelectric materials such as ZnO and AlN.
Abstract: Thin film piezoelectric materials offer a number of advantages in microelectromechanical systems (MEMS), due to the large motions that can be generated, often with low hysteresis, the high available energy densities, as well as high sensitivity sensors with wide dynamic ranges, and low power requirements This paper reviews the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelectric response For non-ferroelectric piezoelectrics such as ZnO and AlN, the importance of film orientation is discussed The high available electrical resistivity in AlN, its compatibility with CMOS processing, and its high frequency constant make it especially attractive in resonator applications The higher piezoelectric response available in ferroelectric films enables lower voltage operation of actuators, as well as high sensitivity sensors Among ferroelectric films, the majority of the MEMS sensors and actuators developed have utilized lead zirconate titanate (PZT) films as the transducer Randomly oriented PZT films show piezoelectric e(31, f) coefficients of about - 7 C/m(2) at the morphotropic phase boundary In PZT films, orientation, composition, grain size, defect chemistry, and mechanical boundary conditions all impact the observed piezoelectric coefficients The highest achievable piezoelectric responses can be observed in {001} oriented rhombohedrally-distorted perovskites For a variety of such films, e(31,f) coefficients of - 12 to - 27 C/m(2) have been reported
1,016 citations
TL;DR: In this paper, a detailed overview of developments in transducer materials technology relating to their current and future applications in micro-scale devices is provided. And a short discussion of structural polymers that are extending the range of micro-fabrication techniques available to designers and production engineers beyond the limitations of silicon fabrication technology is presented.
Abstract: This paper provides a detailed overview of developments in transducer materials technology relating to their current and future applications in micro-scale devices. Recent advances in piezoelectric, magnetostrictive and shape-memory alloy systems are discussed and emerging transducer materials such as magnetic nanoparticles, expandable micro-spheres and conductive polymers are introduced. Materials properties, transducer mechanisms and end applications are described and the potential for integration of the materials with ancillary systems components is viewed as an essential consideration. The review concludes with a short discussion of structural polymers that are extending the range of micro-fabrication techniques available to designers and production engineers beyond the limitations of silicon fabrication technology.
523 citations
148 citations
TL;DR: In this paper, Pb(Zr,Ti)O3 (PZT) thin films between metallic-oxide SRO electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates.
Abstract: Crystalline Pb(Zr,Ti)O3 (PZT) thin films between metallic-oxide SrRuO3 (SRO) electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates. Different deposition conditions for the initial layers of the bottom SRO electrode result in an orientation switch. Either (110)- or (001)-oriented SRO thin films are obtained and the PZT films deposited on the bottom electrode continued both growth directions. The ferroelectric characteristics of the SRO/PZT/SRO capacitors are found to be strongly dependent on their crystalline orientation: PZT (001)-oriented thin films showed stable, high quality ferroelectric response, while the remnant polarization of the PZT (110)-oriented thin films only show high response after multiple switching cycles.
96 citations
TL;DR: In this article, the electrode size dependence of the effective large signal piezoelectric response coefficient (d33,f) of lead zirconate titanate (PZT) thin films is investigated by using double beam laser interferometer measurements and finite element modeling.
Abstract: The electrode size dependence of the effective large signal piezoelectric response coefficient (d33,f) of lead zirconate titanate (PZT) thin films is investigated by using double beam laser interferometer measurements and finite element modeling. The experimentally observed electrode size dependence is shown to arise from a contribution from the substrate. The intrinsic PZT contribution to d33,f is independent of electrode size and is equal to the theoretical value derived assuming a rigid substrate. The substrate contribution is strongly dependent on the relative size of the electrode with respect to the substrate thickness. For electrode sizes larger than the substrate thickness, the substrate contribution is positive and for electrode sizes smaller than the substrate thickness, the substrate contribution is negative. In the case of silicon substrates, if the electrode size is equal to the substrate thickness, the substrate contribution vanishes, and the measured value of d33,f is equal to the theoretical value under the rigid substrate assumption.
39 citations