Studies on the millimeter-wave performance of MITTATs from avalanche transit time phase delay

doi:10.1109/AEMC.2011.6256873

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Studies on the millimeter-wave performance of MITTATs from avalanche transit time phase delay

Proceedings Article•DOI•

Studies on the millimeter-wave performance of MITTATs from avalanche transit time phase delay

Aritra Acharyya¹, J. P. Banerjee¹, Moumita Mukherjee¹•Institutions (1)

University of Calcutta¹

01 Dec 2011-pp 1-4

About: This article is published in IEEE Applied Electromagnetics Conference.The article was published on 2011-12-01. It has received 7 citations till now. The article focuses on the topics: Group delay and phase delay.

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Journal Article•DOI•

Effects of tunnelling current on millimetre-wave IMPATT devices

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Aritra Acharyya¹, Moumita Mukherjee¹, Janmajoy Banerjee¹•Institutions (1)

University of Calcutta¹

02 Sep 2015-International Journal of Electronics

TL;DR: In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes was studied by taking into account the parasitic series resistance of the device.

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Abstract: In this paper, the influence of tunnelling on the RF performance of millimetre-wave (mm-wave) impact ionisation avalanche transit time (IMPATT) diodes operating in mixed tunnelling and avalanche transit time mode is studied by taking into account the parasitic series resistance of the device. The results show that the parasitic resistance of mm-wave IMPATTs increases and consequently the power delivered by the device decreases due to the consequence of band-to-band tunnelling. The critical background doping concentration and operating frequency are found to be 5.0 × 1023 m−3 and 260 GHz, respectively, above which the influence of tunnelling on the RF performance of the device becomes predominant.

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20 citations

Cites background from "Studies on the millimeter-wave perf..."

...A comprehensive technique to simulate the static (DC) and small-signal (S-S) characteristics of IMPATT devices based on driftdiffusion model was first reported by Roy et al. in the years 1979 and 1985, respectively (Roy, Banerjee, & Pati, 1985; Roy, Sridharan, Ghosh, & Pal, 1979)....
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...R(x,ω) vs. x and X(x,ω) vs. x for a particular ω) in the active region of the device can be obtained (Acharyya et al., 2011b)....
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...Since the electrons in the valance band have no available quantum states in the conduction band for tunnelling within the region 0 ≤ x ≤ xL, the tunnelling generation rate of holes is zero; similarly, within the region xR ≤ x ≤ W no empty states are available in the conduction band for electron tunnelling; thus, the tunnelling generation rate of electrons is zero (Acharyya & Banerjee, 2012b; Acharyya et al., 2011b; Dash & Pati, 1992)....
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...The relationship between x and x’ is given by: x ¼ x0 1 Eg E 12 for 0 x xj; (9) x ¼ W W x0 1þ Eg EB E 12 for xj x W ; (10) where E is the amount of energy with respect to the bottom of the conduction band on the n-side and Eg is the vertical difference between x and x’ (Acharyya & Banerjee, 2012b; Acharyya, Mukherjee, & Banerjee, 2011b; Dash & Pati, 1992)....
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...Tunnelling-assisted phase distortion between external current and applied voltage is responsible for the aforementioned degradation (Acharyya et al., 2011a; Luy & Kuehnf, 1989)....
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Journal Article•DOI•

Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

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Suranjana Banerjee, Aritra Acharyya, Janmajoy Banerjee

28 Apr 2013-Active and Passive Electronic Components

TL;DR: In this article, the noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied.

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Abstract: Noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density ( sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW).

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16 citations

Journal Article•DOI•

Effect of photo-irradiation on the noise properties of double-drift silicon MITATT device

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Aritra Acharyya¹, Suranjana Banerjee², J. P. Banerjee¹•Institutions (2)

University of Calcutta¹, West Bengal University of Technology²

18 Jun 2014-International Journal of Electronics

TL;DR: In this paper, the effect of photo-irradiation on the avalanche noise properties of a double-drift region (DDR) mixed tunnelling and avalanche transit time (MITATT) device was investigated.

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Abstract: In this paper, the authors have made an attempt to study the effect of photo-irradiation on the avalanche noise properties of double-drift region (DDR) mixed tunnelling and avalanche transit time (MITATT) device. A model to analyse the avalanche noise of illuminated DDR MITATT devices under small-signal condition is proposed and simulation is carried out to study the noise properties of the device based on silicon designed to operate at W-band. The results show that avalanche noise measure of the device under two different optical illumination configurations such as Flip Chip (FC) and Top Mount (TM) are 37.1 dB and 40.2 dB, respectively, for the incident photon flux density of 1026 m−2 sec−1 at 1000 nm wavelength while the noise measure of the same device under dark condition is 35 dB. Thus, the increase of avalanche noise due to the incident photon flux on optically illuminated device can be reduced if FC configuration is taken instead of TM configuration.

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12 citations

Cites background or methods from "Studies on the millimeter-wave perf..."

...This noise field is assumed to be due to a noise source γ(x′) located at the space point x′ within the space charge region of the device (Acharyya et al., 2010, 2011a; Dash et al., 1996)....
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...Simulation study of avalanche noise performance of the W-band DDR MITATT diode based on Si under unilluminated condition was earlier reported by the authors (Acharyya et al., 2010, 2011a)....
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...…of primary device equations such as Poisson’s equation, combined carrier continuity equation in the steady state, current density equations and mobile space charge equation subject to suitable boundary conditions as discussed in detail in the earlier papers by the authors (Acharyya et al., 2011b)....
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...…used to solve the above mentioned differential equations involving the real (enr(x,x′)) and imaginary parts (eni(x,x′)) of total noise electric field en(x,x′) simultaneously, subject to appropriate boundary conditions at the depletion layer edges (Acharyya et al., 2010, 2011a; Dash et al., 1996)....
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...This phenomenon is also observed in the study of MITATT mode of operation of IMPATT devices by the author in their earlier reports (Acharyya et al., 2011b, 2011c) and also by some other researchers (Dash & Pati, 1992) earlier....
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Proceedings Article•DOI•

Millimeter-wave and noise properties of Si∼Si 1−x Ge x heterojunction double-drift region MITATT devices at 94 GHz

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Suranjana Banerjee¹, Aritra Acharyya², Janmajoy Banerjee²•Institutions (2)

West Bengal University of Technology¹, University of Calcutta²

01 Dec 2012

TL;DR: In this paper, the authors have made an attempt to study the millimeter-wave properties and noise performance of Si∼Si 1−x Ge x anisotype heterojunction Double-Drift Region (DDR) Mixed Tunneling Avalanche Transit Time (MITATT) devices operating at 94 GHz.

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Abstract: The authors have made an attempt to study the millimeter-wave properties and noise performance of Si∼Si 1−x Ge x anisotype heterojunction Double-Drift Region (DDR) Mixed Tunneling Avalanche Transit Time (MITATT) devices operating at 94 GHz. A computer simulation technique based on driftdiffusion model is used for the present study. Two different mole fractions, x = 0.1 and x = 0.3 of Ge and four types of device structure are considered for the simulation. The results show that the n-Si 0.7 Ge 0.3 ∼p-Si heterojunction DDR structure of MITATT device excels all other structures as regards DC to RF conversion efficiency (20.15%), CW power output (773.29 mW) and noise measure (33.09 dB).

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4 citations

Optical Control of Millmeter-wave Lateral Double-Drift Region Silicon IMPATT Device

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J. P. Banerjee, A. Acharyya, S. Banerjee

01 Dec 2012

TL;DR: In this paper, the effect of optical illumination on lateral Double-Drift Region (DDR) structure of Silicon Impact Avalanche Transit Time (IMPATT) device is investigated, and the results show that the optical control is more effective in lateral IMPATT structure than in its vertical counterpart as regards reduction of output power and shifting of optimum frequency.

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Abstract: The effect of optical illumination on lateral Double-Drift Region (DDR) structure of Silicon Impact Avalanche Transit Time (IMPATT) device is investigated in this paper. The device is designed to operate at mm-wave W-band frequency. The optical modulation of DC and RF properties of lateral DDR IMPATT device is studied by a simulation technique which incorporates the dependence of normalized difference of photocurrent density at the depletion layer edges on the intensity of optical illumination and surface density of photon flux. The simulation results are compared with those obtained for a conventional vertical DDR Si IMPATT structure under similar optical and electrical operating conditions. The results show that the optical control is more effective in lateral IMPATT structure than in its vertical counterpart as regards reduction of output power and shifting of optimum frequency. When light is incident on hole drift layer of the lateral structure the output power reduces by 18.7% while the optimum frequency shifts upwards by 2.48%. Under similar conditions the power reduces by 10.9% and optimum frequency shifts upwards by 0.75% in vertical structure.

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2 citations

Cites background from "Studies on the millimeter-wave perf..."

...Impact Avalanche Transit Time (IMPATT) device has emerged as the most suitable solid-state source to generate sufficiently high power in microwave, millimeterwave and terahertz frequencies [1-4]....
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References

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Journal Article•DOI•

A proposed high-frequency, negative-resistance diode

[...]

W. T. Read

01 Mar 1958-Bell System Technical Journal

TL;DR: In this paper, a semiconductor diode designed to operate as an oscillator when mounted in a suitable microwave cavity is described and analyzed, and it appears possible to obtain over 20 watts of ac power in continuous operation at 5 kmc.

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Abstract: This paper describes and analyzes a proposed semiconductor diode designed to operate as an oscillator when mounted in a suitable microwave cavity. The frequency would be in the range extending from 1 to 50 kmc. The negative Q may be as low as 10 and the efficiency as high as 30 per cent. The diode is biased in reverse so as to establish a depletion, or space-charge, layer of fixed width in a relatively high resistance region, bounded by very low resistance end regions. The electric field has a maximum at one edge of the space-charge region, where hole-electron pairs are generated by internal secondary emission, or avalanche. The holes (or electrons) travel across the space-charge layer with constant velocity, thus producing a current through the diode. Because of the build-up time of the avalanche, and the transit time of the holes across the depletion layer, the alternating current is delayed by approximately one-half cycle relative to the ac voltage. Thus, power is delivered to the ac signal. When the diode is mounted in an inductive microwave cavity tuned to the capacity of the diode, an oscillation will build up. It appears possible to obtain over 20 watts of ac power in continuous operation at 5 kmc.

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521 citations

Journal Article•DOI•

Mixed tunneling and avalanche mechanisms in p-n junctions and their effects on microwave transit-time devices

[...]

M.E. Elta¹, George I. Haddad¹•Institutions (1)

University of Michigan¹

01 Jun 1978-IEEE Transactions on Electron Devices

TL;DR: In this article, analytical models of dc and small-signal characteristics for Read-type diode structures are given which incorporate both tunneling and avalanche mechanisms, and a "dead-space" analysis is shown to be fundamental to accurate models of thin generation regions.

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Abstract: Analytical models of dc and small-signal characteristics for Read-type diode structures are given which incorporate both tunneling and avalanche mechanisms. A "dead-space" analysis is shown to be fundamental to accurate models of thin generation regions. Pure tunneling and pure avalanche appear as the two limiting cases of the general models. In the pure tunneling limit, the diode oscillator will operate in the tunnel transit-time (TUNNETT) mode. The TUNNETT oscillator would be attractive for low-noise and medium power and efficiency applications. For diode structures which operate between the pure TUNNETT and IMPATT modes, there exists a noise performance-output power tradeoff. Computer solutions of the analytical models, for specific diode structures and operating conditions, are given, and the results are discussed and compared with experimental results whenever possible.

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46 citations

Journal Article•DOI•

A generalized simulation method for MITATT-mode operation and studies on the influence of tunnel current on IMPATT properties

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Gananath Dash, S P Pati

01 Feb 1992-Semiconductor Science and Technology

TL;DR: In this article, a generalized method of DC and high-frequency analysis for microwave transit time diodes in mixed tunnelling and avalanche mode is reported, which can be applied to any type of diode structure.

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Abstract: A generalized method of DC and high-frequency analysis for microwave transit time diodes in mixed tunnelling and avalanche mode, which can be applied to any type of diode structure is reported. Taking a purely field-dependent tunnel generation rate for electrons, the same is computed for holes from a simulated energy band diagram within the depletion layer of the diode. The method has been applied to a variety of Si, GaAs and InP diode structures. The results show a substantial degradation of IMPATT properties due to phase distortion caused by the tunnelling current.

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36 citations

Journal Article•DOI•

Effects of tunneling on high-efficiency IMPATT avalanche diodes

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M. Chive, E. Constant, M. Lefebvre, J. Pribetich

01 May 1975

TL;DR: In this article, the effects of tunnel injection on high-efficiency IMPATT avalanche diodes characterized by a high low-doping profile were analyzed, taking into account the effect of tunneling.

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Abstract: A theoretical and experimental study is presented of the effects of tunnel injection on high-efficiency IMPATT avalanche diodes characterized by a high low-doping profile. Some characteristics usually observed in such high-efficiency IMPATT oscillators are explained, taking into account the effects of tunneling.

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16 citations

Journal Article•DOI•

Tunneling-assisted IMPATT operation

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J.-F. Luy, R. Kuehnf

01 Mar 1989-IEEE Transactions on Electron Devices

TL;DR: In this article, the influence of tunneling on the efficiency of millimeter-wave IMPATT diodes is investigated, and the authors show that for efficient silicon IMPATT diode operation, the maximum electric field should be below 1*10/sup 6/V/cm.

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Abstract: The influence of tunneling on the efficiency of millimeter-wave IMPATT diodes is investigated. For a reliable estimation of this influence, the tunnel generation rate coefficients are measured from silicon p-i-n diodes. The Read equation is solved taking a time-dependent tunnel current into account. The phase distortion, which is responsible for the efficiency degradation caused by tunneling, is calculated analytically and numerically. It is shown that for an exact solution the injected current density should be calculated numerically. The results suggest that for efficient silicon IMPATT diode operation, the maximum electric field should be below 1*10/sup 6/ V/cm. Due to the current and field dependent representation of the injection phase, there are direct consequences on the design of millimeter- and submillimeter-wave transit time diodes for high power generation as well as for low-noise operation. >

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15 citations