Journal ArticleDOI
Studies on the thickness-dependent photofield effect in amorphous hydrogenated silicon thin films
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In this article, the flat-band voltages were estimated as a function of the a-Si:H film thickness and the density of states around the midgap NF was also estimated following the theory put forward by Harm et al.About:
This article is published in Thin Solid Films.The article was published on 1991-03-20. It has received 1 citations till now. The article focuses on the topics: Amorphous solid & Amorphous silicon.read more
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Studies on sulphur-passivated GaAs/SiN interfaces
TL;DR: In this article, PECVD silicon nitride films were grown over sulphur-passivated surfaces of 〈100〉 n- GaAs wafers, and a hysteresis-free MIS structure was achieved over these samples.
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Journal ArticleDOI
Application of amorphous silicon field effect transistors in addressable liquid crystal display panels
TL;DR: In this paper, it is shown that thin-film field effect transistors (FETs) made from amorphous (a-) silicon deposited by the glow-discharge technique have considerable potential as switching elements in addressable liquid crystal display panels.
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Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors
Nancy B. Goodman,H. Fritzsche +1 more
TL;DR: In this paper, an iterative computer method for deriving N(E), the density of gap states, from field effect or capacitance-voltage measurements without using simplifying approximations is described.
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A Simple Scheme for Evaluating Field Effect Data
M. Grünewald,P. Thomas,D. Würtz +2 more
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Analysis of field-effect-conductance measurements on amorphous semiconductors
TL;DR: In this article, a method for calculating the relationship between the density of localized states in an amorphous semiconductor and the experimentally measured field-effect conductance is presented.
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An amorphous silicon thin film transistor: Theory and experiment☆
TL;DR: In this article, the volt-ampere characteristics for a thin film transistor fabricated with vacuum-deposition amorphous silicon as the semiconductor are presented and experimentally verified using the Cohen-Fritzsche-Ovshinsky model.