Journal ArticleDOI
Study of electrical performance and stability of solution-processed n-channel organic field-effect transistors
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TLDR
In this paper, a solution processed n-channel organic field effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with high mobility and low contact resistance are reported.Abstract:
Solution processed n-channel organic field-effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with high mobility and low contact resistance are reported. Ca, Au, or Ca capped with Au (Ca/Au) was used as the top source/drain electrodes. The devices with Ca electrodes exhibit excellent n-channel behavior with electron mobility values of 0.12 cm2/V s, low threshold voltages (∼2.2 V), high current on/off ratios (105–106) and subthreshold slopes of 0.7 V/decade. By varying the channel lengths (25–200 μm) in devices with different metal/semiconductor interfaces, the effect of channel length scaling on mobility is studied and the contact resistance is extracted. The width-normalized contact resistance (RCW) for Au (12 kΩ cm) is high in comparison to Ca (7.2 kΩ cm) or Ca/Au (7.5 kΩ cm) electrodes at low gate voltage (VGS=10 V). However, in the strong accumulation regime at high gate voltage (VGS=30 V), its value is nearly independent of the choice of metal electrodes and in a range of 2.2–2.6 kΩ cm. These devices show stable electrical behavior under multiple scans and low threshold voltage instability under electrical bias stress (VDS=VGS=30 V, 1 h) in N2 atmosphere.read more
Citations
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Journal ArticleDOI
Patterning technology for solution-processed organic crystal field-effect transistors
TL;DR: The latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs.
Journal ArticleDOI
Vertically stacked complementary inverters with solution-processed organic semiconductors
Jungbae Kim,Canek Fuentes-Hernandez,Do Kyung Hwang,Shree Prakash Tiwari,William J. Potscavage,Bernard Kippelen +5 more
TL;DR: In this article, a vertically stacked complementary inverter with a solution-processed [6,6]-phenyl c 61 butyric acid methyl ester (PCBM) n -channel thin-film transistor (TFT) fabricated on top of a 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) and poly(triarylamine) (PTAA) blend p -channel TFT was presented.
Journal ArticleDOI
Low-voltage solution-processed n-channel organic field-effect transistors with high-k HfO2 gate dielectrics grown by atomic layer deposition
TL;DR: In this paper, high performance solution-processed n-channel organic field effect transistors based on [6,6]-phenyl C61 butyric acid methyl ester with low operating voltages (3 V) are demonstrated using a high-k hafnium dioxide gate dielectric grown by atomic layer deposition.
Journal ArticleDOI
Development of fullerenes and their derivatives as semiconductors in field-effect transistors: exploring the molecular design
TL;DR: In this article, the effect of these compounds on OFET device performance, especially on mobility and stability, is described and the relationship between the chemical structure and device performance is discussed.
Journal ArticleDOI
Phase separation induced high mobility and electrical stability in organic field-effect transistors
TL;DR: In this paper, a vertical phase separation between TIPS-pentacene and polystyrene as confirmed from scanning electron microscopic image, evetually leads to excellent carrier mobility in polymer blend devices compared to that of neat TIPS -pentaene.
References
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A high-mobility electron-transporting polymer for printed transistors
He Yan,Zhihua Chen,Yan Zheng,Chris Newman,Jordan R. Quinn,Florian Dötz,Marcel Kastler,Antonio Facchetti +7 more
TL;DR: A highly soluble and printable n-channel polymer exhibiting unprecedented OTFT characteristics under ambient conditions in combination with Au contacts and various polymeric dielectrics is reported and all-printed polymeric complementary inverters have been demonstrated.
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TL;DR: In this paper, the performance of organic field effect transistors (OFETs) is examined in terms of field effect mobility and on-off current ratio, and the most prominent fabrication techniques are described.
Journal ArticleDOI
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TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
Journal ArticleDOI
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Iain McCulloch,Martin Heeney,Clare Bailey,Kristijonas Genevičius,Iain I. MacDonald,Maxim Shkunov,David Sparrowe,Steve Tierney,Robert Wagner,Weimin Zhang,Michael L. Chabinyc,R. Joseph Kline,Michael D. McGehee,Michael F. Toney +13 more
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Journal ArticleDOI
An electrophoretic ink for all-printed reflective electronic displays
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