Study of SEL and SEU in SRAM Using Different Laser Techniques
01 Sep 2013-pp 1-5
TL;DR: In this paper, single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented.
Abstract: Single event upset (SEU) and single event latchup (SEL) laser testing results of SRAM CY62256 using both focused and local laser irradiation techniques are presented. Variable laser wavelength was used for SEU and SEL threshold linear energy transfer (LET) estimation. The backside laser irradiation technique was also applied. Laser testing results were compared to heavy ion testing ones. depends on SEE type and the laser irradiation technique being used. We investigated SEL and SEU effects in SRAM CY62256NLL using focused and local laser irradiation techniques and different laser wavelengths (1.064, 1.0, 0.9 and 0.85 μm). We also used the backside laser irradiation in addition to the front side one when making the experiment with the wavelength of 1.064 μm. II. EXPERIMENTAL TECHNIQUE The experimental investigation was carried out using two laser facilities providing the wavelengths from 0.53 μm up to 1.064 μm (Table 1). In this work PICO-3 laser facility was used at 1.064 μm wavelength. PICO-4 operated at the wavelengths of 1.0 μm, 0.9 μm and 0.85 μm.
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TL;DR: The first experimental test of new DICE memory cells with the transistors spaced into two groups (Spaced Transistor Groups DICE-STG DICE) composed on a 65-nm CMOS static RAM proved their high upset resilience as discussed by the authors.
Abstract: The first experimental test of new DICE memory cells with the transistors spaced into two groups (Spaced Transistor Groups DICE—STG DICE), composed on a 65-nm CMOS static RAM proved their high upset resilience. The STG DICE memory cells have two communication wires between the two groups of transistors that made it possible to use the striping of groups of transistors to increase the distances between sensitive nodes of cells up to 2.32–3.09 μm at a small increase in cell area. The blocks of 65-nm 128 × 32-bit CMOS RAM cache and 32 × 64-bit multiport RAM based on the STG DICE cells are characterized by upset thresholds lying in the range of 3.55–4.05 nJ of the laser pulse energy with a pulse duration of 70 ps and diameter of the spot of 3.5 μm. These threshold values exceed the upset thresholds of 65-nm CMOS RAM on 6T memory cells by factors of 20 for RAM cache and 3.5 for multiport RAM. In STG DICE RAM multiple upsets are absent in contrast to RAM based on 6T-cells.
18 citations
14 Jul 2014
TL;DR: In this article, a femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed, and the influence of laser pulse duration on simulation results is observed.
Abstract: The new SEE laser simulation facility based on femtosecond laser source with tunable pulse duration is presented, and its most important features are discussed. The influence of laser pulse duration on simulation results is observed.
13 citations
TL;DR: In this paper, the main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated.
Abstract: The installations for laser testing of microelectronic elements (first of all - integrated circuits) of devices for space applications for hardness to local radiation effects from heavy charged particles are presented. The possibility of a focused pulsed laser radiation application to the study of local radiation effects, caused by single heavy charged particles, is explained. The fundamentals of an approach to the construction of test sets, based on the picosecond and femtosecond lasers and systems for focusing their radiation, are considered. The main technical requirements for the basic modules of sets for laser testing (laser wavelength and pulse duration and repetition rate, spatial beam parameters and minimal spot size, speed of object movement and so on) are substantiated. All worked out sets have a full-featured software for the operational management of all modules of the laser test facility, including the positioning of the object, to provide feedback from the measurement results of the reaction of the object on the laser excitation. The parameters of developed laser hardware and software systems and their foreign counterparts are compared. Further improvement directions for laser testing tools are briefly outlined. The discussion is also presented of described hardware technical and operational characteristics, allowing to use it for a variety of scientific research studies, requiring selective (with submicron spatial resolution) object excitation by ultrashort laser pulses and recording responses to this effect with the exact timing of the moment of excitation, as well as to perform a variety of high precision technological operations.
5 citations
TL;DR: In this paper, an approach to evaluate the sensitivity parameters, namely, sections of single event effects in the linear loss energy transfer function, using a charge collection model by a point sensitive area is proposed.
Abstract: An approach to evaluating the sensitivity parameters, namely, sections of single event effects in the linear loss energy transfer function, using a charge collection model by a point sensitive area is proposed. The presented model satisfactorily describes the experimental results based on changes of sections of single event effects on the linear energy transfer and allows one to relatively simply take into account angular dependences for incident ions. The approach for the evaluation of the sensitivity of integrated circuits to the effects of multiple bit upsets is proposed.
5 citations
13 May 2021
TL;DR: In this article, a broad investigation of single event effects in ARM microcontroller (MCU) under heavy ion irradiation is presented, and the results of SEFI simulation and calculation by engineering model are compared with experimental results.
Abstract: the paper presents a broad investigation of single event effects in ARM microcontroller (MCU) under heavy ion irradiation. Experimental details are presented: device under the test and test setup. The stages of experiments are described: radiation testing using heavy ion accelerator, laser source irradiation and single event functional interrupts simulation campaign. The algorithm of operation of the program injector for conducting campaigns on simulating SEFI is presented. The influence of a real-time operating system on cross-section of SEFI was evaluated. SEFI cross-sections obtained with and without the operating system were compared. A method using fault injection in program and data memory and hardware detection of functional interrupts was tested. The results of SEFI simulation and calculation by engineering model were compared with experimental results. The results obtained differ from each other. Possible explanations of the proposed differences and the correction of the model are proposed. Directions for further research are outlined.
4 citations
References
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23 Nov 2010
TL;DR: In this article, the authors provide an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effect on components, based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA).
Abstract: This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.
120 citations
TL;DR: Two laboratory techniques for measuring SEE, one involving a pulsed laser and the other /sup 252/Cf, are described in detail in this paper, which establishes the limits of each technique.
Abstract: Integrated circuits are currently tested at accelerators for their susceptibility to single-event effects (SEE's). However, because of the cost and limited accessibility associated with accelerator testing, there is considerable interest in developing alternate testing methods. Two laboratory techniques for measuring SEE, one involving a pulsed laser and the other /sup 252/Cf, are described in detail in this paper. The pulsed laser provides information on the spatial and temporal dependence of SEE, information that has proven invaluable in understanding and mitigating SEE in spite of the differences in the physical mechanisms responsible for SEE induced by light and by ions. Considerable effort has been expended on developing /sup 252/Cf as a laboratory test for SEE, but the technique has not found wide use because it is severely limited by the low energy and short range of the emitted ions that are unable to reach junctions either covered with dielectric layers or deep below the surface. In fact, there are documented cases where single-event latchup (SEL) testing with /sup 252/Cf gave significantly different results from accelerator testing. A detailed comparison of laboratory and accelerator SEE data is presented in this review in order to establish the limits of each technique.
90 citations
01 Sep 2011
TL;DR: The results of local laser simulation for estimation of SEE parameters are presented in this paper, which is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.
Abstract: The results of local laser simulation for estimation of SEE parameters are presented. Simulation method is based on the local laser irradiation of VLSI by measuring response in power supply circuits and determining laser threshold energy of SEE.
36 citations
01 Sep 2011
TL;DR: The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and 252Cf fission source) is provided for the cache and the possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed.
Abstract: The results on SEE sensitivity of 0.5 $\mu$ m SOI CMOS microprocessor are presented and discussed. The comparative analysis of different test techniques (particle accelerator, pulsed laser technique and $^{252}$ Cf fission source) is provided for the cache. The possible sources of discrepancies between test results and the ways of data correction and methods of testing techniques' accuracy improvement are discussed.
15 citations