Study on Electric Field Modulation and Avalanche Enhancement of SiC/GaN IMPATT Diode

TLDR: In this article, a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure was proposed to replace the GaN homogenous P-n junction to manufacture an impactionization-avalanche-transit-time (IMPATT) diode, and the performance of this 6HSiC/GaN heterojunction single-drift-region (SDR) IMPATT diode was simulated at frequencies above 100 GHz.

Abstract: This paper proposes a 6H-materials silicon carbide (SiC)/gallium nitride (GaN) heterogeneous p-n structure to replace the GaN homogenous p-n junction to manufacture an impact-ionization-avalanche-transit-time (IMPATT) diode, and the performance of this 6H-SiC/GaN heterojunction single-drift-region (SDR) IMPATT diode is simulated at frequencies above 100 GHz. The performance parameters of the studied device were simulated and compared with the conventional GaN p-n IMPATT diode. The results show that the p-SiC/n-GaN IMPATT performance is significantly improved, and this is reflected in the enhanced characteristics in terms of operating frequency, rf power, and dc-rf conversion efficiency by the two mechanisms. One such characteristic that the new structure has an excessive avalanche injection of electrons in the p-type SiC region owing to the ionization characteristics of the SiC material, while another is a lower electric field distribution in the drift region, which can induce a higher electron velocity and larger current in the structure. The work provides a reference to obtain a deeper understanding of the mechanism and design of IMPATT devices based on wide-bandgap semiconductor materials.