Journal ArticleDOI
Study on the electrical degradation of AlGaN/GaN MIS-HEMTs induced by residual stress of SiN x passivation
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TLDR
In this paper, the authors reported a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface.Abstract:
In this paper, we report a new phenomenon in C-V measurement of different gate length MIS-HEMTs, which can be associated with traps character of the AlGaN/GaN interface. The analysis of DC measurement, frequency dependent capacitance-voltage measurements and simulation show that the stress from passivation layer may induce a decrease of drain output current I ds , an increase of on-resistance, serious nonlinearity of transconductance g m , and a new peak of C-V curve. The value of the peak is reduced to zero while the gate length and measure frequency are increasing to 21 μm and 1 MHz, respectively. By using conductance method, the SiN x /GaN interface traps with energy level of E C −0.42 eV to E C −0.45 eV and density of 3.2 × 10 12 ∼ 5.0 × 10 12 eV −1 cm −2 is obtained after passivation. According to the experimental and simulation results, formation of the acceptor-like traps with concentration of 3 × 10 11 cm −2 and energy level of E C −0.37 eV under the gate on AlGaN barrier side of AlGaN/GaN interface is the main reason for the degradation after the passivation.read more
Citations
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Journal ArticleDOI
Failure mechanism analysis of off-state drain-to-source leakage current failure of a commercial 650 V discrete GaN-on-Si HEMT power device by accelerated power cycling test
TL;DR: The tests and the analysis indicate that the failure of an off-state drain-to-source leakage current failure of a 650 V discrete GaN-on-Si power device under PC test is a thermal stress induced IDSS leakage, not matched previously reported mechanisms.
Review of AlGaN/GaN HEMTs Based Devices
TL;DR: A review of the recent advances of the AlGaN/GaN high-electron-mobility transistors (HEMTs) based devices is presented in this paper.
Journal ArticleDOI
Simulation design of a high-breakdown-voltage p-GaN-gate GaN HEMT with a hybrid AlGaN buffer layer for power electronics applications
Yong Liu,Qi Yu,Jiangfeng Du +2 more
TL;DR: In this article, the authors proposed a hybrid AlGaN buffer structure for high-breakdown-voltage high-electron-mobility transistor (HB-HEMT) with a p-GaN gate and hybrid GaN buffer to improve the breakdown voltage and Baliga's figure of merit.
Journal ArticleDOI
Research of single-event burnout and hardened GaN MISFET with embedded PN junction
TL;DR: In this article, a single event burnout (SEB) simulation for a conventional GaN MISFET field plate (FPC-MISFET) and an embedded pn junction (EJ-MISCFET).
Journal ArticleDOI
Mechanical stress effects on electrical breakdown of freestanding GaN thin films
TL;DR: It is hypothesized that stress-generated defects climb to the free surfaces, creating localized leakage current instability or 'ringing' effects in GaN devices or in designing harsh environment sensors.
References
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Journal ArticleDOI
Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
Jungwoo Joh,J.A. del Alamo +1 more
TL;DR: In this article, a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments was found, which is consistent with a degradation mechanism based on crystallographic defect formation due to the inverse piezoelectric effect.
Journal ArticleDOI
Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors
TL;DR: In this paper, the authors investigated the relationship between improved electrical properties of Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) and electronic state densities.
Journal ArticleDOI
AlGaN/GaN HEMTs With Thin InGaN Cap Layer for Normally Off Operation
TL;DR: In this paper, the polarization-induced field in the InGaN cap layer was employed to increase the conduction band, which leads to the normally off operation, and the maximum transconductance was increased from 85 to 130 mS/mm due to a reduction of the parasitic source resistance.
Journal ArticleDOI
A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors
TL;DR: In this article, the authors proposed a simple technique to measure current collapse in GaN high-electron mobility transistors (HEMTs) that utilizes common dc device characterization equipment.
Journal ArticleDOI
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C"V… characterization of metal-insulator-semiconductor-heterostructure capacitors
Martin Fagerlind,Fredrik Allerstam,Einar Ö. Sveinbjörnsson,Niklas Rorsman,Anelia Kakanakova-Georgieva,Anders Lundskog,Urban Forsberg,Erik Janzén +7 more
TL;DR: In this article, a method to extract fixed charge as well as traps from capacitance-voltage characteristics of metal-insulator-semiconductor-heterostructure capacitors is presented.