Sub-10 nm imprint lithography and applications
01 Nov 1997-Journal of Vacuum Science & Technology B (American Vacuum Society)-Vol. 15, Iss: 6, pp 2897-2904
TL;DR: A new lithography paradigm that is based on deformation of a resist by compression molding rather than altering its chemical structure by radiation, and is designed to fabricate nanostructures inexpensively with high throughput is presented.
Abstract: New developments, further details, and applications of imprint lithography are presented. Arrays of 10 nm diameter and 40 nm period holes were imprinted not only in polymethylmethacrylate (PMMA) on silicon, but also in PMMA on gold substrates. The smallest hole diameter imprinted in PMMA is 6 nm. All the PMMA patterns were transferred to a metal using a liftoff. In addition, PMMA mesa’s of a size from 45 nm to 50 μm were obtained in a single imprint. Moreover, imprint lithography was used to fabricate the silicon quantum dot, wire, and ring transistors, which showed the same behavior as those fabricated using electron (e)-beam lithography. Finally, imprint lithography was used to fabricate nanocompact disks with 10 nm features and 400 Gbits/in.2 data density—near three orders of magnitude higher than current critical dimensions (CDs). A silicon scanning probe was used to read back the data successfully. The study of wear indicates that due to the ultrasmall force in tapping mode, both the nano-CD and the ...
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TL;DR: A method of constructing <30-nanometer structures in close proximity with precise spacings is presented that uses the step-by-step application of organic molecules and metal ions as size-controlled resists on predetermined patterns, such as those formed by electron-beam lithography.
Abstract: The present invention is a method and apparatus relating to manufacturing nanostructure patterns and components using molecular science. The method includes overlaying a multilayer organic molecule resist on at least a portion of a parent structure selectively deposited on a substrate, depositing a layer over the parent structure and in contact with at least a portion of the multilayer organic resist, and removing the multilayer organic molecule resist to leave a residual structure.
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TL;DR: This work has shown that coherent oscillations of conduction electrons on a metal surface excited by electromagnetic radiation at a metal -dielectric interface can be associated with surface plasmons, which have potential applications in miniaturized optical devices, sensors, and photonic circuits.
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TL;DR: In this paper, the basic principles of nano-printing are discussed, with an emphasis on the requirements on materials for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication.
Abstract: Nanoimprint lithography (NIL) is a nonconventional lithographic technique for high-throughput patterning of polymer nanostructures at great precision and at low costs. Unlike traditional lithographic approaches, which achieve pattern definition through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist material and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional techniques. This Review covers the basic principles of nanoimprinting, with an emphasis on the requirements on materials for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication.
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TL;DR: The present review tries to give a comprehensive and most up to date view to the field, with an emphasis on the currently most investigated anodic TiO2 nanotube arrays.
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984 citations
References
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TL;DR: Averin et al. as discussed by the authors proposed a single charge tunneling method to transfer electrons one-by-one in low-Capacitance tunnel junctions, and applied it to semiconductor nanostructures.
Abstract: Introduction to Single Charge Tunneling M.H. Devoret, H. Grabert. Charge Tunneling Rates in Ultrasmall Junctions G.L. Ingold, Yu V. Nazarov. Transferring Electrons One by One D. Esteve. Josephson Effect in Low-Capacitance Tunnel Junctions M. Tinkham. Coulomb-Blockade Oscillations in Semiconductor Nanostructures H. Van Houten, et al. Macroscopic Quantum Tunneling of Charge and Co-Tunneling D.V. Averin, Yu. V. Nazarov. One-Dimensional Arrays of Small Tunnel Junctions P. Delsing. Single Charges in Two-Dimensional Junction Arrays J.E. Mooij, G. Schon. Possible Applications of the Single Charge Tunneling D.V. Averin, K.K. Kikharev. Index.
823 citations