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Journal ArticleDOI

Surface characterization of CdS0.62Se0.38 by X-ray photoelectron spectroscopy

01 Jan 1992-Journal of Materials Science Letters (Kluwer Academic Publishers)-Vol. 11, Iss: 5, pp 252-254
About: This article is published in Journal of Materials Science Letters.The article was published on 1992-01-01. It has received 7 citations till now. The article focuses on the topics: X-ray photoelectron spectroscopy & Characterization (materials science).
Citations
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Journal ArticleDOI
TL;DR: In this paper, the effects of ion sputtering on the surface layers of multicomponent targets are discussed, and it is shown that the changes are due to radiation-induced diffusion and segregation effects.
Abstract: Ion bombardment often leads to compositional changes in the surface layers of multicomponent targets. Such changes due to noble gas ion sputtering are discussed for InP and GaAs. The analyses show that the compositional change in InP (i.e., indium enrichment) is mainly due to preferential sputtering. In the case of GaAs. the changes are due to radiation-induced diffusion and segregation effects. Brief mention is made of compositional changes in a few other systems. The discussion on sputter-induced topography development deals mainly with InP because ion bombardment leads to dramatic topographical effects in this material. Ripple development on GaAs is also briefly discussed. Radiation damage has been well researched, and its mechanism and effects usually differ substantially when going from one semiconductor group to another. Bombardment-induced damage is briefly discussed for InP, GaAs, SiC, some II-VI semiconductors, and HgCdTe.

62 citations

Journal ArticleDOI
TL;DR: In this paper, the photoelectrochemical performance of CdSSe quantum dots tethered to a framework of vertically oriented titania (TiO2) nanotubes was studied.

30 citations

Journal ArticleDOI
TL;DR: In this article, Raman and X-ray photoelectron spectroscopy (XPS) studies have given concurrent results revealing the chemical states of the ternary samples.

23 citations

Journal ArticleDOI
TL;DR: In this paper, a solution mixing and casting of Cd(NO3)2·4H2O and poly(ethylene oxide) (PEO) at different molar ratios (1:100 − 1:600) followed by hydrogen sulfide treatment were employed to fabricate solid films of cadmium sulfide (CdS)/polyethylene Oxide (Poxide) nanocomposites.

12 citations

Journal ArticleDOI
01 May 2020-Vacuum
TL;DR: In this paper, the ternary solid solution (CdS1-xSex) thin films were deposited by Chemical Solution onto ITO/glass substrates at 90 degrees C. The results revealed good crystalline quality of CBD films as an effect of ITO substrate and deposition temperature.

9 citations

References
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Journal ArticleDOI
TL;DR: In this paper, the electron and hole ionization energy of imperfections in single crystals of cadmium sulfo-selenide solid solutions have been measured by a variety of photoelectronic techniques.
Abstract: The electron and/or hole ionization energy of imperfections in single crystals of cadmium sulfo‐selenide solid solutions have been measured by a variety of photoelectronic techniques including optical absorption, optical quenching of photoconductivity, thermal quenching of photoconductivity, photoconductivity decay, and thermally stimulated conductivity. Both the optical and thermal hole ionization energy of sensitizing center acceptors undergo an abrupt decrease from a value characteristic of cadmium sulfide (∼1 eV) to a value characteristic of cadmium selenide (∼0.6 eV) between 30% and 50% cadmium selenide. The same transition is observed as an abrupt increase in the energy of the imperfection absorption edge, corresponding to the optical electron ionization energy of these centers. The electron ionization energy of electron traps varies approximately proportionally to the band gap throughout the solid solution range.

73 citations

Journal ArticleDOI
TL;DR: In this article, solid solutions of CdS and CdSe of different compositions were prepared by sintering pressed pellets and vacuum evaporation, and the flatband potentials of the mixtures were shifted toward negative potentials with respect to pure cdS.
Abstract: Solid solutions of CdS and CdSe of different compositions were prepared by sintering pressed pellets and vacuum evaporation. The bandgap of the mixtures varied monotonically with percent composition between that of CdS and CdSe. Studies of the photoassisted oxidation of sulfide with these electrodes with a 1M Na2S, 0.1M NaOH electrolyte showed that the flatband potentials (Vfb) of the mixtures were shifted toward negative potentials with respect to pure CdS and CdSe. Solar cells using these electrodes formulated as (x)n-CdS (1 -- x)CdSe/1M Na2S, 0.2M S, 0.1M NaOH/Pt are described. When x = 0.9, for a sintered pellet electrode, a power efficiency of 9% at a cell voltage of 202 mV (irradiation with 577 nm light of 1 mW/cm~ intensity) was obtained.

67 citations

Journal ArticleDOI
TL;DR: In this article, mixed crystals of CdS−CdSe were prepared in a sealed system by solid-state diffusion; a composition as high as cdS0.6Se0.4 was easily obtained.
Abstract: Mixed crystals of CdS‐CdSe were prepared in a sealed system by solid‐state diffusion; by starting with pure CdS crystals, a composition as high as CdS0.6Se0.4 was easily obtained. With increasing Se content, the sharp absorption edge of the compound shifted from approximately 5200 to 6200 A. The composition of the mixed crystals prepared under equilibrium conditions agrees with values calculated from available thermo‐dynamic data and with the assumption that the mixed crystals form ideal solid solutions.

34 citations

Journal ArticleDOI
TL;DR: The photoelectrochemical behavior of n-type CdS (polycrystalline) containing small amount of PbS or CdSe in S2− /S2−n redox system has been studied as discussed by the authors.

20 citations

Journal ArticleDOI
TL;DR: In this paper, a linear correlation between emission maxima (nm) and composition in homogeneous CdSxSe1−x samples provided a spatial probe of electronhole (e−-h+) pair recombination in the inhomogeneous material.

14 citations