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Journal ArticleDOI

Surface-Plasmon-Enhanced Light Emitters Based on InGaN Quantum Wells

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TLDR
The results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources.
Abstract
Since 1993, InGaN light-emitting diodes (LEDs) have been improved and commercialized, but these devices have not fulfilled their original promise as solid-state replacements for light bulbs as their light-emission efficiencies have been limited. Here we describe a method to enhance this efficiency through the energy transfer between quantum wells (QWs) and surface plasmons (SPs). SPs can increase the density of states and the spontaneous emission rate in the semiconductor, and lead to the enhancement of light emission by SP–QW coupling. Large enhancements of the internal quantum efficiencies (etaint) were measured when silver or aluminium layers were deposited 10 nm above an InGaN light-emitting layer, whereas no such enhancements were obtained from gold-coated samples. Our results indicate that the use of SPs would lead to a new class of very bright LEDs, and highly efficient solid-state light sources.

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Journal ArticleDOI

Plasmonics for improved photovoltaic devices

TL;DR: Recent advances at the intersection of plasmonics and photovoltaics are surveyed and an outlook on the future of solar cells based on these principles is offered.
Journal ArticleDOI

Plasmonics for extreme light concentration and manipulation.

TL;DR: The basic concepts behind plasmonics-enabled light concentration and manipulation are discussed, an attempt to capture the wide range of activities and excitement in this area is made, and possible future directions are speculated on.
Journal ArticleDOI

Controlling the synthesis and assembly of silver nanostructures for plasmonic applications

TL;DR: In plasmonics, the metal nanostructures can serve as antennas to convert light into localized electric fields (E-fields) or as waveguides to route light to desired locations with nanometer precision through a strong interaction between incident light and free electrons in the nanostructure.
Journal ArticleDOI

Effective wavelength scaling for optical antennas.

TL;DR: This Letter shows that antenna designs can be transferred to the optical frequency regime by replacing lambda by a linearly scaled effective wavelength lambda(eff)=n(1)+n(2) lambda/lambda/lambda(p), with lambda(p) being the plasma wavelength and n(1), n( 2) being coefficients that depend on geometry and material properties.
Journal ArticleDOI

Surface electromagnetic waves thermally excited: Radiative heat transfer, coherence properties and Casimir forces revisited in the near field

TL;DR: In this article, the influence of surface waves on the thermally excited electromagnetic field is discussed. And the authors introduce the fluctuation-dissipation theorem that allows to model the fluctuating electromagnetic fields.
References
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Book

Handbook of Optical Constants of Solids

TL;DR: In this paper, E.D. Palik and R.R. Potter, Basic Parameters for Measuring Optical Properties, and W.W.Hunter, Measurement of Optical Constants in the Vacuum Ultraviolet Spectral Region.
Journal ArticleDOI

Extraordinary optical transmission through sub-wavelength hole arrays

TL;DR: In this article, the optical properties of submicrometre cylindrical cavities in metallic films were explored and it was shown that arrays of such holes display highly unusual zero-order transmission spectra at wavelengths larger than the array period, beyond which no diffraction occurs.
Journal ArticleDOI

Raman spectra of pyridine adsorbed at a silver electrode

TL;DR: In this article, Ramaman spectroscopy has been employed for the first time to study the role of adsorption at electrodes, and it has been possible to distinguish two types of pyridine adaption at a silver electrode.
Journal ArticleDOI

Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

Abstract: Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure (DH) blue‐light‐emitting diodes(LEDs) with the luminous intensity over 1 cd were fabricated As an active layer, a Zn‐doped InGaN layer was used for the DH LEDs The typical output power was 1500 μW and the external quantum efficiency was as high as 27% at a forward current of 20 mA at room temperature The peak wavelength and the full width at half‐maximum of the electroluminescence were 450 and 70 nm, respectively This value of luminous intensity was the highest ever reported for blue LEDs
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