Swift heavy ion irradiation in ZnO films
29 Aug 2019-Vol. 2142, Iss: 1, pp 040020
TL;DR: In this paper, the morphological, structural, optical and electrical properties of unirradiated and swift heavy ions (SHI) irradiated ZnO films were discussed.
Abstract: We discussed the morphological, structural, optical and electrical properties of unirradiated and swift heavy ions (SHI) irradiated ZnO films.X-ray diffraction revealed the hexagonal wurtzite structure corresponding to c-axis (002) of all films. The roughnesses and grain sizes of the irradiated ZnO film increases with increasing SHI fluencies. Both unirradiated and irradiated films show more than 90 % transmission in the UV-visible region. Finally, we show that SHI reduced the resistance of the ZnO films to a large extent.
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TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...
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218 citations
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