Dissertation•
Switching mechanisms, electrical characterisation and fabrication of nanoparticle based non-volatile polymer memory devices.
01 Jan 2010-
About: The article was published on 2010-01-01 and is currently open access. It has received 8 citations till now. The article focuses on the topics: Photoconductive atomic force microscopy & Electrostatic force microscope.
Citations
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Journal Article•
TL;DR: The creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3 are reported.
Abstract: Experimental and theoretical investigations have demonstrated that a quasi-two-dimensional electron gas (q-2DEG) can form at the interface between two insulators: non-polar SrTiO3 and polar LaTiO3 (ref. 2), LaAlO3 (refs 3-5), KTaO3 (ref. 7) or LaVO3 (ref. 6). Electronically, the situation is analogous to the q-2DEGs formed in semiconductor heterostructures by modulation doping. LaAlO3/SrTiO3 heterostructures have recently been shown to exhibit a hysteretic electric-field-induced metal-insulator quantum phase transition for LaAlO3 thicknesses of 3 unit cells. Here, we report the creation and erasure of nanoscale conducting regions at the interface between two insulating oxides, LaAlO3 and SrTiO3. Using voltages applied by a conducting atomic force microscope (AFM) probe, the buried LaAlO3/SrTiO3 interface is locally and reversibly switched between insulating and conducting states. Persistent field effects are observed using the AFM probe as a gate. Patterning of conducting lines with widths of approximately 3 nm, as well as arrays of conducting islands with densities >10(14) inch(-2), is demonstrated. The patterned structures are stable for >24 h at room temperature.
402 citations
TL;DR: In this paper, the properties of a-C:H films as a function of annealing temperature were investigated, with a focus on their electrical and optical properties, and it was shown that these films are stable up to 450°C.
Abstract: In this study, hydrogenated amorphous carbon (a-C:H) films are investigated for electronic applications as an insulating layer. a-C:H films were deposited using Radio Frequency-Plasma Enhanced Chemical Vapour Deposition (RF-PECVD) technique at room temperature. For the first time, the properties of a-C:H films as a function of annealing temperature is investigated, with a focus on their electrical and optical properties. This study shows that a-C:H films are stable up to 450 °C. This investigation will facilitate the use of a-C:H films as an insulating layer where the semiconductor active layers are deposited at higher temperatures (e.g. amorphous silicon deposited around 300 °C for thin film transistor TFTs). In addition to understanding the electrical and optical properties of annealed a-C:H films, we have further explored and studied its suitability in Flash-type memory devices. Various forms of diamond-like carbon are considered to have a high chemical resistance; no extensive data are available in the literature on this subject. The stability of a-C: H thin films with variousreactive chemicals, commonly used in organic/printable electronic devices, is also investigated in this work. The findings may provide opportunities for adoption/integration of a-C:H in hybrid organic-inorganic electronic devices.
12 citations
TL;DR: In this paper, the effect of thickness variation on the memory behavior of polymethylmethacrylate (PMMA)-based devices has been investigated, and it has been found that the film thickness determines the type of behavior: ohmic, write-once-read-many-times (WORM) memory with two ON states, WORM memory with a negative differential resistance (NDR) region, and WORMM memory without NDR region.
Abstract: The effect of thickness variation on the memory behavior of the polymethylmethacrylate-(PMMA)-based devices has been investigated. The PMMA film thicknesses have been varied between 5 to 300 nm, and we have found that the film thickness determines the type of behavior: ohmic, write-once-read-many-times (WORM) memory with two ON states, WORM memory with a negative differential resistance (NDR) region, and WORM memory without NDR region. The fact that similar results were obtained using different solvents to dilute PMMA (chlorobenzene, chloroform, and dimethyl sulfoxide), as well as using an other insulating polymer such as polystyrene (PS), leads to the conclusion that the phenomenon of memory depends on the aluminum electrodes, organic film thickness, and the compliance current used during the electroformation whereas the type of organic layer (PMMA or PS) has minor influence. From here, we conclude that the conductivity switching of the insulator organic film is due to the injection of aluminum particles into the film during the first voltage cycle.
10 citations
Dissertation•
01 Jul 2019
TL;DR: In this article, the use of different polymer materials such as Polyethylene (PE), Polypropylene (PP), Polyvinyl chloride, (PVC) Polystyrene (PS), polystyrene fiber (PSF) as the substrates for the design and fabrication of different MPAs for communication and sensing applications in millimetre wave (MMW) region.
Abstract: The rapid development in the polymer-based electronic contribute a strong determination for using these materials as substitute to the high-cost materials commonly used as medium substrate in the fabrication of Microstrip Patch Antenna (MPA). Antenna technology can strongly gain from the utilisation of low-cost, flexible, light weight with suitable fabrication techniques. The uniqueness of this work is the use of variety of common but unexplored different polymer materials such as Polyethylene (PE), Polypropylene (PP), Polyvinyl chloride, (PVC) Polystyrene (PS), Polystyrene fibre (PSF) as the substrates for the design and fabrication of different MPAs for communication and sensing applications in millimetre wave (MMW)region. Electrospinning (ES) technique is used to reconstruct PS and produced PSF material of low dielectric constant. A co-solvent vehicle(comprising 50:50 ratio) of Dichloromethane (DCM) and acetone was utilised with processing condition of solution infusion flow-rate of 60μL/min and an applied voltage of 12± kV yielded rigid PSF substrates. The PSF Produced has complex permittivity of 1.36±5% and a loss tangent of 2.4E-04±4.8E-04 which was measured using Spilt-Post Dielectric Resonators (SPDR) technique at National Physics Laboratory, Teddington, London. A diamond-shaped MPAs on RT Duriod material were simulated and fabricated using photo-lithography for different inner lengths to work in the frequencies range from (1-10 GHz). The resonant frequency is approximated as a function of inner length L1 in the form of a polynomial equation. The fabricated diamond-shaped MPA more compact (physical geometry) as compared with a traditional monopole antenna. This MPAs experimentally measured and have a good agreement with the simulated results. The coplanar waveguide (CPW) diamond-shaped MPA working in the MMW region was designed and fabricated with polymer materials as substrates using thermal evaporation technique and the RF measurement was carried out using Vector Network Analyser (VNA). The resonant frequencies of the CPW diamond shaped MPAs for (PE, PP, PVC, PS and PSF) were found to be 67.5 GHz, 72.36 GHz, 62.41 GHz, 63.25 GHz and 80.58 GHz, respectively. The antenna fabricated on PSF were resonating at higher frequency when compared to the other polymers materials. In adding an air-bridge to the CPW diamond-shaped MPA the resonating frequency increased from ≈ 55 GHz to≈ 62 GHz. Three different shaped nano-patch antennas (Diamond shaped, diamond shaped array and T-shaped) have been designed, simulated and fabricated on Silicon substrate with DLC deposition using focused Ion Beam (FIB) technique, these antennas were found to resonate at 1.42 THz with (-19 dB return loss), 2.42 THz with (-14 dB return loss) and 1.3 THz with (-45 dB return loss) respectively.
9 citations
Cites background from "Switching mechanisms, electrical ch..."
...Despite some of these polymer having been used in several electronic devices to date[175], the need to study the dynamic thermal stability of polymer materials over the broad range of frequencies required, where the influence of necessary parameters (dielectric constant and loss tangent) shall be measure for the antenna application....
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...Until recently conventional dielectric polymers have not been utilised extensively for microelectronic applications, therefore the majority of the information available in the literature refers to the chemical and mechanical properties, with limited information regarding the electrical properties relevant to bulk material insulating applications[175] of vital importance for using a dielectric substrate for patch antennas....
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Dissertation•
01 May 2013
TL;DR: In this paper, the authors present a table of Table of Table 1 : Table of contents of the table. Table 2 : Table 1.1.2.3.4.
Abstract: ................................................................................................................................ iv Table of
6 citations
References
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01 Jan 2012
139,059 citations
"Switching mechanisms, electrical ch..." refers background in this paper
...This compares well with measured charge densities in conventional SiO2 MIS capacitors [127], which would be expected, as the main source of contaminant ions comes from environmental factors, such as solvents and human contact rather than any source that is inherent to a specific process or material....
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...When SiO2 is used as the insulating material the main causes of mobile charge are the ionic impurities Na + , Li + and K + , with sodium ions being the dominant impurity due to their high mobility in silicon dioxide and their abundance in the environment [127]....
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TL;DR: In this article, a double-layer structure of organic thin films was prepared by vapor deposition, and efficient injection of holes and electrons was provided from an indium-tinoxide anode and an alloyed Mg:Ag cathode.
Abstract: A novel electroluminescent device is constructed using organic materials as the emitting elements. The diode has a double‐layer structure of organic thin films, prepared by vapor deposition. Efficient injection of holes and electrons is provided from an indium‐tin‐oxide anode and an alloyed Mg:Ag cathode. Electron‐hole recombination and green electroluminescent emission are confined near the organic interface region. High external quantum efficiency (1% photon/electron), luminous efficiency (1.5 lm/W), and brightness (>1000 cd/m2) are achievable at a driving voltage below 10 V.
13,185 citations
"Switching mechanisms, electrical ch..." refers background in this paper
...There are also a limited number of commercially available devices starting to be released, mainly in the area of digital displays, such as the first commercial OLED television, Sony‟s XEL-1 [29]....
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...Due to their future potential, tremendous research efforts have been undertaken in the field of polymer electronics, with significant advancements made and demonstrations of devices such as organic light-emitting diodes (OLED) [27], thin film transistors [2] and solar...
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...Due to their future potential, tremendous research efforts have been undertaken in the field of polymer electronics, with significant advancements made and demonstrations of devices such as organic light-emitting diodes (OLED) [27], thin film transistors [2] and solar Introduction to Organic Electronics and Digital Memories 8 cells [28]....
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TL;DR: In this paper, the carrier collection efficiency and energy conversion efficiency of polymer photovoltaic cells were improved by blending of the semiconducting polymer with C60 or its functionalized derivatives.
Abstract: The carrier collection efficiency (ηc) and energy conversion efficiency (ηe) of polymer photovoltaic cells were improved by blending of the semiconducting polymer with C60 or its functionalized derivatives. Composite films of poly(2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene) (MEH-PPV) and fullerenes exhibit ηc of about 29 percent of electrons per photon and ηe of about 2.9 percent, efficiencies that are better by more than two orders of magnitude than those that have been achieved with devices made with pure MEH-PPV. The efficient charge separation results from photoinduced electron transfer from the MEH-PPV (as donor) to C60 (as acceptor); the high collection efficiency results from a bicontinuous network of internal donor-acceptor heterojunctions.
9,611 citations
Book•
04 Jul 1990
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Abstract: Preface to Third Edition. 1 Resistivity. 1.1 Introduction. 1.2 Two-Point Versus Four-Point Probe. 1.3 Wafer Mapping. 1.4 Resistivity Profiling. 1.5 Contactless Methods. 1.6 Conductivity Type. 1.7 Strengths and Weaknesses. Appendix 1.1 Resistivity as a Function of Doping Density. Appendix 1.2 Intrinsic Carrier Density. References. Problems. Review Questions. 2 Carrier and Doping Density. 2.1 Introduction. 2.2 Capacitance-Voltage (C-V). 2.3 Current-Voltage (I-V). 2.4 Measurement Errors and Precautions. 2.5 Hall Effect. 2.6 Optical Techniques. 2.7 Secondary Ion Mass Spectrometry (SIMS). 2.8 Rutherford Backscattering (RBS). 2.9 Lateral Profiling. 2.10 Strengths and Weaknesses. Appendix 2.1 Parallel or Series Connection? Appendix 2.2 Circuit Conversion. References. Problems. Review Questions. 3 Contact Resistance and Schottky Barriers. 3.1 Introduction. 3.2 Metal-Semiconductor Contacts. 3.3 Contact Resistance. 3.4 Measurement Techniques. 3.5 Schottky Barrier Height. 3.6 Comparison of Methods. 3.7 Strengths and Weaknesses. Appendix 3.1 Effect of Parasitic Resistance. Appendix 3.2 Alloys for Contacts to Semiconductors. References. Problems. Review Questions. 4 Series Resistance, Channel Length and Width, and Threshold Voltage. 4.1 Introduction. 4.2 PN Junction Diodes. 4.3 Schottky Barrier Diodes. 4.4 Solar Cells. 4.5 Bipolar Junction Transistors. 4.6 MOSFETS. 4.7 MESFETS and MODFETS. 4.8 Threshold Voltage. 4.9 Pseudo MOSFET. 4.10 Strengths and Weaknesses. Appendix 4.1 Schottky Diode Current-Voltage Equation. References. Problems. Review Questions. 5 Defects. 5.1 Introduction. 5.2 Generation-Recombination Statistics. 5.3 Capacitance Measurements. 5.4 Current Measurements. 5.5 Charge Measurements. 5.6 Deep-Level Transient Spectroscopy (DLTS). 5.7 Thermally Stimulated Capacitance and Current. 5.8 Positron Annihilation Spectroscopy (PAS). 5.9 Strengths and Weaknesses. Appendix 5.1 Activation Energy and Capture Cross-Section. Appendix 5.2 Time Constant Extraction. Appendix 5.3 Si and GaAs Data. References. Problems. Review Questions. 6 Oxide and Interface Trapped Charges, Oxide Thickness. 6.1 Introduction. 6.2 Fixed, Oxide Trapped, and Mobile Oxide Charge. 6.3 Interface Trapped Charge. 6.4 Oxide Thickness. 6.5 Strengths and Weaknesses. Appendix 6.1 Capacitance Measurement Techniques. Appendix 6.2 Effect of Chuck Capacitance and Leakage Current. References. Problems. Review Questions. 7 Carrier Lifetimes. 7.1 Introduction. 7.2 Recombination Lifetime/Surface Recombination Velocity. 7.3 Generation Lifetime/Surface Generation Velocity. 7.4 Recombination Lifetime-Optical Measurements. 7.5 Recombination Lifetime-Electrical Measurements. 7.6 Generation Lifetime-Electrical Measurements. 7.7 Strengths and Weaknesses. Appendix 7.1 Optical Excitation. Appendix 7.2 Electrical Excitation. References. Problems. Review Questions. 8 Mobility. 8.1 Introduction. 8.2 Conductivity Mobility. 8.3 Hall Effect and Mobility. 8.4 Magnetoresistance Mobility. 8.5 Time-of-Flight Drift Mobility. 8.6 MOSFET Mobility. 8.7 Contactless Mobility. 8.8 Strengths and Weaknesses. Appendix 8.1 Semiconductor Bulk Mobilities. Appendix 8.2 Semiconductor Surface Mobilities. Appendix 8.3 Effect of Channel Frequency Response. Appendix 8.4 Effect of Interface Trapped Charge. References. Problems. Review Questions. 9 Charge-based and Probe Characterization. 9.1 Introduction. 9.2 Background. 9.3 Surface Charging. 9.4 The Kelvin Probe. 9.5 Applications. 9.6 Scanning Probe Microscopy (SPM). 9.7 Strengths and Weaknesses. References. Problems. Review Questions. 10 Optical Characterization. 10.1 Introduction. 10.2 Optical Microscopy. 10.3 Ellipsometry. 10.4 Transmission. 10.5 Reflection. 10.6 Light Scattering. 10.7 Modulation Spectroscopy. 10.8 Line Width. 10.9 Photoluminescence (PL). 10.10 Raman Spectroscopy. 10.11 Strengths and Weaknesses. Appendix 10.1 Transmission Equations. Appendix 10.2 Absorption Coefficients and Refractive Indices for Selected Semiconductors. References. Problems. Review Questions. 11 Chemical and Physical Characterization. 11.1 Introduction. 11.2 Electron Beam Techniques. 11.3 Ion Beam Techniques. 11.4 X-Ray and Gamma-Ray Techniques. 11.5 Strengths and Weaknesses. Appendix 11.1 Selected Features of Some Analytical Techniques. References. Problems. Review Questions. 12 Reliability and Failure Analysis. 12.1 Introduction. 12.2 Failure Times and Acceleration Factors. 12.3 Distribution Functions. 12.4 Reliability Concerns. 12.5 Failure Analysis Characterization Techniques. 12.6 Strengths and Weaknesses. Appendix 12.1 Gate Currents. References. Problems. Review Questions. Appendix 1 List of Symbols. Appendix 2 Abbreviations and Acronyms. Index.
6,573 citations
"Switching mechanisms, electrical ch..." refers background or methods in this paper
...Where εs is the relative permittivity of silicon, and LD is the Debye length, as defined by [128]:...
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...A peak should then be present that corresponds to the flatband voltage of the capacitor [128]....
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...In conventional SiO2 insulators this voltage stressing is usually performed at several hundred degrees Celsius and with a stressing voltage chosen to give an electric field across the insulator of a few MV·cm -1 [128]....
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...Using similar capacitance-voltage techniques as those applied to the study of the polystyrene films it is possible to measure charge densities as low as 10 9 cm -2 [128]....
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IBM1
TL;DR: The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
Abstract: Recent developments in the controlled movement of domain walls in magnetic nanowires by short pulses of spin-polarized current give promise of a nonvolatile memory device with the high performance and reliability of conventional solid-state memory but at the low cost of conventional magnetic disk drive storage. The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip. Individual spintronic reading and writing nanodevices are used to modify or read a train of ∼10 to 100 domain walls, which store a series of data bits in each nanowire. This racetrack memory is an example of the move toward innately three-dimensional microelectronic devices.
4,052 citations
"Switching mechanisms, electrical ch..." refers background in this paper
...Racetrack Memory Racetrack memory [47-48] in some respects is technologically similar to conventional hard disc drives, in that it also stores data in magnetic domains....
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...In this way the memory requires no mechanically moving parts, hence has a greater reliability and higher performance than HDDs, with theoretical nanosecond operating speeds [48]....
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