Journal ArticleDOI
Symmetry relations between the mobility and differential mobility-tensor components of cubic semiconductors in the hot carrier range
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TLDR
In this article, the properties of the mobility tensor and differential mobility-tensor components in the hot-carrier range are investigated in cubic semiconductors as regards to symmetry and independently from any scattering mechanism.About:
This article is published in Physica D: Nonlinear Phenomena.The article was published on 1972-12-15. It has received 3 citations till now. The article focuses on the topics: Tensor.read more
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Bulk hot-electron properties of cubic semiconductors
Carlo Jacoboni,Lino Reggiani +1 more
TL;DR: In this article, a review of charge transport properties at high electric fields in bulk cubic semiconductors is presented, based on the knowledge of the band structure and scattering mechanism of the material under investigation.
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Anisotropy in diffusion-noise temperature and differential mobility induced in semiconductors by an external electric field
TL;DR: In this paper, the authors compared the transverse and longitudinal diffusion noise temperatures in isotropic semiconductors in the presence of an applied electric field and showed that the ratio T n| / T n⊥ tends towards infinity at intense electric fields, and that differential mobility is mainly responsible for strong anisotropy induced by an electric field in the noise temperature.
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Intervalley transfers of hot electrons in silicon below 77 K
TL;DR: In this paper, conductivity measurements versus electric field for different impurity concentrations ND-NA at lattice temperatures T ⩽ 77 K were used to estimate the intervalley rate.
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Journal ArticleDOI
Drift velocity of electrons and holes and associated anisotropic effects in silicon
TL;DR: In this article, the drift velocity of electrons and holes in high purity silicon has been measured, with the time of flight technique, as a function of electric field (0·1−50 KV/cm) at several temperatures between 77 and 300°K.
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Magnetoresistance Effect in Cubic Semiconductors with Spheroidal Energy Surfaces
TL;DR: In this paper, the collision frequency of electrons having a spheroidal energy surface with acoustical modes of vibration is calculated without neglecting phonon energy using an asymptotic form in which collision frequency is proportional to the square root of their energy.
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Negative differential mobility of electrons in germanium: A Monte Carlo calculation of the distribution function, drift velocity and carrier population in the (111) and (100) minima
W Fawcett,E G S Paige +1 more
TL;DR: In this article, the authors investigated the origin of the negative differential mobility observed at low temperatures and high electric fields in germanium using a Monte Carlo method with the principal objective of elucidating the source of the NDE.
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Distribution Functions for Hot Electrons in Many-Valley Semiconductors
H. G. Reik,H. Risken +1 more
TL;DR: In this article, the Boltzmann equation for electrons in many-valley semiconductors, with scattering by acoustical and optical lattice vibrations, is solved for high electric fields in the following two cases: (1) Intervalley-scattering is completely negligible.