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Journal ArticleDOI

Synthesis and characterization of submicron silicon carbide powders with silicon and phenolic resin

Limin Shi1, Hongsheng Zhao1, Yinghui Yan1, Ziqiang Li1, Chunhe Tang1 
31 Oct 2006-Powder Technology (Elsevier)-Vol. 169, Iss: 2, pp 71-76
TL;DR: In this article, a three-step process is used to fabricate submicron silicon carbide powders in the reaction of silicon with carbon during the third step of thermal treatment.
About: This article is published in Powder Technology.The article was published on 2006-10-31. It has received 44 citations till now. The article focuses on the topics: Silicon & Silicon carbide.
Citations
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Journal ArticleDOI
TL;DR: In this paper, the structural evolution of graphite and morphologies of silicon carbide whiskers were studied with the aids of XRD, SEM, TEM and EDS techniques.

59 citations

Journal ArticleDOI
TL;DR: In this paper, the microwave absorbing properties of lithium aluminum silicate (LAS) and LAS-SiC double layer composite absorbers were investigated within the frequency range of 8.2-12.4 GHz at 300-500°C.

48 citations

Journal ArticleDOI
TL;DR: In this article, nano-sized β-SiC particles were synthesized from sol-gel process by employing APC as a dispersant agent and adjusting pH in the range of 2.5-4.
Abstract: Nano sized β-SiC particles were synthesized from sol–gel process. Mono dispersed β-SiC nano particles with semi spherical morphology were obtained by employing APC as a dispersant agent and adjusting pH in the range of 2.5–4. Phenolic resin and TEOS were employed as precursors and heat treatment was conducted up to 1500 °C. Different techniques such as XRD, DTA, FTIR, PSA, SEM and TEM were used to characterize the formation of β-SiC. The (Si–O-C) bonds were formed by hydrolysis and condensation reactions in the gel while the nucleation of crystalline β-SiC was found to be initiated at 1400 °C. The primary particles in the sol were found to be (< 10 nm) while the size distribution in the final product was recorded in the range of 30–50 nm.

47 citations


Cites background from "Synthesis and characterization of s..."

  • ...As it is seen in this Table, crystallites sizes did not change by temperature elevation and it could be concluded that at 1400, 1450 and 1500 C yet precursor materials are present for b-SiC nano powder particles formation and bSiC particles would not grow until precursors exist in reaction media [25]....

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Journal ArticleDOI
TL;DR: In this article, the effect of the formation of in situ nano SiC whiskers on strength and density of bauxite-carbon composites was studied, and the results indicated that SiC nano whiskers, 50-90nm, are single crystalline β-SiC with mechanism of formation VLS.
Abstract: SiC whisker is excellent in characteristics such as specific strength and chemical stability, and is useful as a composite reinforcing material. In this paper, the effect of the formation of in situ nano SiC whiskers on strength and density of bauxite–carbon composites was studied. Samples were prepared composed of 65 wt.% bauxite, 15 wt.% SiC-containing material, 10 wt.% coke, 10 wt.% resole and different values of silicon additives. The pressed samples were cured at 200 °C (2 h) and fired at 1100 °C and 1400 °C (2 h). XRD, SEM, TEM, EDX, FTIR and STA were used to characterize the samples. These characterizations indicated that SiC nano whiskers, 50–90 nm, are single crystalline β-SiC with mechanism of the formation VLS. So, firing temperature is an important factor. As, SiC nano whisker was formed at 1400 °C and improved CCS values up to four times in sample containing 6 wt.% ferrosilicon.

31 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used RF inductively thermal plasma (PL-35 Induction Plasma, Tekna Co., Canada) for synthesis of fine SiC nano-powder from organic precursors (tetraethylorthosilicate, hexamethyldisilazane and vinyltrimethoxy silane).

30 citations


Cites background from "Synthesis and characterization of s..."

  • ...Amorphous SiO2 was produced due to the oxidation of silicon carbide on the surfaces of the particles during the heat treatment at 800 8C [17]....

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References
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Journal ArticleDOI
TL;DR: In this article, a silicon carbide coating has been produced by a two-step pack cementation technique to protect carbon/carbon (C/C) composites from oxidation.

239 citations

Journal ArticleDOI
TL;DR: In this article, two different processing techniques were tested for the development of the anode cermet (ceramic-metal) of the planar high temperature solid oxide fuel cell (SOFC): the coat-mix (CM) process; and tape casting (TC).

163 citations

Journal ArticleDOI
TL;DR: In this article, a solution of sugar in silica sol was used as parent material for the manufacture of nanocrystalline SiC powders, and the sugar was converted to carbon particles and the silica carbon mixture was heated up to the approved reaction temperatures between 1550 and 1800 °C under an argon pressure of 180 kPa.
Abstract: A solution of sugar in silica sol was used as parent material for the manufacture of nanocrystalline SiC powders. After mixing and freeze drying of the components the conversion was performed in two steps. First the sugar was converted to carbon particles and secondly the silica carbon mixture was heated up to the approved reaction temperatures between 1550 and 1800 °C under an argon pressure of 180 kPa. When the synthesis temperature was reached the pressure was reduced to 0.02 kPa what leads to a vigorous reaction resulting in extremely fine particles. The obtained powders were characterized with regard to the particle and crystallite size, the BET surface and their chemical composition. The oxygen content was < 0.5 wt% and the particles were < 0.5 μm with crystallites < 100 nm and specific surface areas in the range of 20–30 m2g−1. Conclusions concerning the synthesis parameters to the resulting powder properties are given in this paper.

158 citations

Journal ArticleDOI
TL;DR: In this article, a thermodynamic analysis for predicting the conditions for the plasma synthesis of TiC powders is presented, and the effects of feeding rate and molar ratio are investigated.

130 citations

Journal ArticleDOI
Abstract: Factors affecting stacking fault formation during the synthetic fabrication of {beta}-SiC were investigated in the present study. Two main reaction routes in the carbothermal reduction of SiO{sub 2}--solid-solid and solid-gas reactions--led to the formation of {beta}-SiC, depending on the vapor pressure of the SiO gas. The {beta}-SiC formed by the solid-gas (carbon-SiO gas) reaction showed a whisker morphology with a high stacking fault density (SFD), whereas that formed by the solid-solid (Si-carbon) reaction exhibited spherical particles with a low SFD. The average size of the synthesized particles decreased with decreasing reaction temperature and time, and their stacking fault content, measured by X-ray diffraction, was higher than the true value, possibly because of a size effect. The stacking fault density increased with increase in the heating rate because of an increased reaction rate.

124 citations