Patent
System and method for mask verification using an individual mask error model
Jun Ye,Stefan Hunsche +1 more
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TLDR
In this paper, the authors describe methods and systems to inspect a manufactured lithographic mask, extract physical mask data from mask inspection data, determine systematic mask error data based on differences between the mask data and mask layout data, generate systematic mask errors based on the systematic mask data, create an individual mask error model with mask error parameters, and predict patterning performance of the lithographic process using a particular mask and/or a particular projection system.Abstract:
Methods and systems are disclosed to inspect a manufactured lithographic mask, to extract physical mask data from mask inspection data, to determine systematic mask error data based on differences between the physical mask data and mask layout data, to generate systematic mask error parameters based on the systematic mask error data, to create an individual mask error model with systematic mask error parameters, to predict patterning performance of the lithographic process using a particular mask and/or a particular projection system, and to predict process corrections that optimize patterning performance and thus the final device yield.read more
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Patent
Methods and Systems for Lithography Process Window Simulation
Jun Ye,Yu Cao,Hanying Feng +2 more
TL;DR: In this paper, a method of efficient simulating imaging performance of a lithographic process utilized to image a target design having a plurality of features is presented, which includes the steps of determining a function for generating a simulated image, where the function accounts for process variations associated with the lithographic processes.
Patent
Metrology method, computer product and system
TL;DR: In this paper, a method for determining structural asymmetry of a target using a measured parameter of radiation diffracted by the target is proposed, and a property of a measurement beam of the target that is least sensitive to change in a target formation parameter associated with the target.
Patent
Method and system for lithography process-window-maximixing optical proximity correction
Jun Ye,Yu Cao,Hanying Feng +2 more
TL;DR: In this paper, an efficient OPC method of increasing imaging performance of a lithographic process utilized to image a target design having a plurality of features is proposed. But the method is not suitable for the case where the probability distribution of focus and exposure variation is Gaussian.
Patent
Method and apparatus for design of a metrology target
TL;DR: In this article, a system to select a metrology target for use on a substrate including performing a lithographic simulation for a plurality of points on a process window region for each proposed target, identifying a catastrophic error for any of the plurality of targets for each target, eliminating each target having a catastrophic failure at any point in the plurality, and determining a parameter over the process window for the target not having catastrophic failures.
Patent
Three-dimensional mask model for photolithography simulation
TL;DR: In this paper, a 3D mask model of the photolithography mask with sub-wavelength features is presented. But the model is based on a thin-mask model and does not provide a more realistic approximation of the 3D effects of a thin mask.
References
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Patent
System and method for lithography simulation
TL;DR: In this article, the authors present a system and method that accelerates lithography simulation, inspection, characterization and evaluation of the optical characteristics and properties, as well as the effects and/or interactions of lithographic systems and processing techniques.
Patent
Inspection technique of photomask
Christophe Pierrat,James Burdorf +1 more
TL;DR: In this paper, an improved technique for inspecting photomasks employs simulated images of the resist pattern, compared to a simulated image generated from a pattern captured from a photomask manufactured from the original pattern.
Patent
Method and system for context-specific mask inspection
Robert C. Pack,Louis K. Scheffer +1 more
TL;DR: In this article, a method for inspecting lithography masks includes generating integrated circuit design data and using context information from the integrated circuit's design data to inspect a mask, based on which a mask can be inspected.
Patent
System and method for lithography process monitoring and control
TL;DR: In this article, a technique for measuring, inspecting, characterizing and/or evaluating optical lithographic equipment, methods, and materials used therewith, for example, photomasks is presented.
Proceedings ArticleDOI
Full-chip lithography simulation and design analysis: how OPC is changing IC design
TL;DR: The Model-Based OPC (MB-OPC) was a research project of questionable usefulness, seen possibly as a fix until the next generation stepper was available.