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Journal ArticleDOI

Tailoring room temperature photoluminescence of antireflective silicon nanofacets

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TLDR
In this article, a fluence-dependent antireflection performance is presented from ion-beam fabricated nanofaceted-Si surfaces, which can produce room temperature ultra-violet and blue photoluminescence which can be attributed to interband transitions of the localized excitonic states of different Si-O bonds at the Si/SiOx interface.
Abstract
In this paper, a fluence-dependent antireflection performance is presented from ion-beam fabricated nanofaceted-Si surfaces. It is also demonstrated that these nanofacets are capable of producing room temperature ultra-violet and blue photoluminescence which can be attributed to inter-band transitions of the localized excitonic states of different Si-O bonds at the Si/SiOx interface. Time-resolved photoluminescence measurements further confirm defect-induced radiative emission from the surface of silicon nanofacets. It is observed that the spectral characteristics remain unchanged, except an enhancement in the photoluminescence intensity with increasing ion-fluence. The increase in photoluminescence intensity by orders of magnitude stronger than that of a planar Si substrate is due to higher absorption of incident photons by nanofaceted structures.

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Journal ArticleDOI

All-Oxide-Based Highly Transparent Photonic Synapse for Neuromorphic Computing

TL;DR: This study paves the way to develop a device in which current can be modulated under the action of optical stimuli, serving as a fundamental step toward the realization of low-cost synaptic behavior.
Journal ArticleDOI

Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

TL;DR: In this article, anisotropic morphology of self-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were compared with similar films deposited on pristine-Si substrates.
Journal ArticleDOI

Temporal evolution of Ge surface topography under keV ion irradiation: Combined effects of curvature-dependent sputter erosion and atomic redistribution

TL;DR: In this paper, the formation of periodic ripple patterns, with wave-vectors parallel to the ion-beam projection onto the surface, in the range of oblique incidence angles of 45-70° were observed.
Journal ArticleDOI

Surfing Silicon Nanofacets for Cold Cathode Electron Emission Sites

TL;DR: A novel way to address the origin of the cold cathode electron emission sites from Si-NFs fabricated at room temperature is demonstrated, and in principle, the present methodology can be extended to probe thecold cathode electrons from any nanostructured material.
References
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Journal ArticleDOI

Semiconductor Clusters, Nanocrystals, and Quantum Dots

TL;DR: In this article, the authors focus on the properties of quantum dots and their ability to join the dots into complex assemblies creates many opportunities for scientific discovery, such as the ability of joining the dots to complex assemblies.
Journal ArticleDOI

Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures

TL;DR: A simple aperiodic array of silicon nanotips on a 6-inch wafer with a sub-wavelength structure that can suppress the reflection of light at a range of wavelengths from the ultraviolet, through the visible part of the spectrum, to the terahertz region is reported.
Journal ArticleDOI

Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

TL;DR: A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented andCrystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces.
Journal ArticleDOI

Correlation between luminescence and structural properties of Si nanocrystals

TL;DR: In this paper, strong room-temperature photoluminescence (PL) in the wavelength range 650-950 nm has been observed in high temperature annealed (1000-1300 °C) substoichiometric silicon oxide (SiOx) thin films prepared by plasma enhanced chemical vapor deposition.
Journal ArticleDOI

Gradient-index antireflection coatings.

TL;DR: It is shown that the control of the index gradient as a design parameter can significantly enhance the performance of interference coatings.
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