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Journal ArticleDOI

Temperature Dependency of Resistance of Thin Metal Films

Charles Feldman
- 01 Jun 1963 - 
- Vol. 34, Iss: 6, pp 1710-1714
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TLDR
In this article, the authors studied the temperature dependency of resistance of vacuum deposited gold and platinum films between room temperature and 400° and 600° C, respectively, and showed that the observed behavior can be attributed to a linear combination of the resistance of the individual grains or aggregates and the resistance due to gaps or potential barriers between the grains.
Abstract
The temperature dependency of resistance of vacuum deposited gold and platinum films between room temperature and 400° and 600° C, respectively, has been studied. Particular emphasis has been placed on the transition between thick, continuous films with positive temperature coefficients and thin, granular, or lacunary films with negative temperature coefficients. In addition to the low positive coefficients usually observed in this transition region, a minimum in the resistance vs temperature curve is observed. It is shown that the observed behavior can be attributed to a linear combination of the resistance of the individual grains or aggregates and the resistance due to gaps or potential barriers between the grains. The behavior in the transition region depends critically on the size of both the barriers and grains in the film.

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Citations
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Electrical conduction in discontinuous metal films: A discussion

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Electrical Conduction between Metallic Microparticles

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Effect of grain-boundary scattering on the electrical resistivity of indium films

TL;DR: In this paper, the grain-boundary scattering theory of Mayadas and Shatzkes reproduces the experimental observations more faithfully than the size-effect theory given by Fuchs.
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Electrical and Structural Properties of Mixed Chromium and Silicon Monoxide Films

TL;DR: In this article, a mixture of chromium and silicon monoxide was prepared on glass substrates by vacuum deposition and the significance of various deposition parameters was determined, including temperature and applied electrical field.
References
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Journal ArticleDOI

The mean free path of electrons in metals

TL;DR: The mean free path of electrons in metals has been studied in this paper, where the authors show that electrons follow a straight line along the path of the electron in the metal atom.
Journal ArticleDOI

Electrical Conduction Mechanism in Ultrathin, Evaporated Metal Films

TL;DR: In this paper, the authors investigated the electrical conduction mechanism in the film plane of ultrathin, evaporated metal films and showed that the conductivity depends exponentially on reciprocal temperature, and it should be independent of field at low fields.
Journal ArticleDOI

A possible explanation of the increase of the electrical resistance of thin metal films at low temperatures and small field strengths

TL;DR: In this article, an explanation for the increase in resistance of certain thin metal films at low temperatures and small electrical field strengths is tentatively suggested, which seems to describe in principle the observed increase of resistance.
Journal ArticleDOI

Temperature Coefficients of Resistance of Metallic Films in the Temperature Range 25° to 600°C

TL;DR: The temperature coefficients of resistance (TCR) of films of sputtered Au, Ir, Mo, Ni, Pd, Pt, Rh, Ta, and W, of evaporated Al, Cr, Ti, and Zr, and of the alloy films Pt-Au, Pt-Ir, and Pt-Ni have been measured in vacuo over the temperature range 25° to 600°C; the film thickness range was 75 to 2000 A..
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