Temperature Dependent Electrical Characteristics of Nanostructured WO 3 Based Ambipolar Bottom Gate FET
TL;DR: In this paper, a detailed experimental investigation on nanostructured tungsten trioxide (WO3) based bottom gate field effect transistor (FET) is presented, which is fabricated using scalable process and thoroughly characterized for morphology and device performance.
Abstract: A detailed experimental investigation on nanostructured tungsten trioxide (WO3) based bottom gate field effect transistor (FET) is presented. These were fabricated using scalable process and thoroughly characterized for morphology and device performance. It was also observed that thickness of WO3 and ambient during annealing played a key role in tuning the morphology. The transistors bearing nanostructured morphology of WO3 were tested for device performance such as input-output and transfer characteristics at low, room, and high temperatures. Of all the devices tested, best on-off ratio obtained was 105 and sub-threshold slope obtained was 150 mV/decade inferring an efficient performance of the FET. A tradeoff between the on-off ratio ( I ON/ I OFF) and sub-threshold slope was noticed at higher temperatures. This was attributed to the ambipolar nature of the WO3 films. At a given temperature and bias, either the holes or electrons were present for transport and conduction. Such ambipolar films find great potential in transistors that can be used in switching applications.
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TL;DR: This work reviews the recent advances and remarkable studies of non-carbon 2D materials, in terms of their structures, preparations, properties and FET biosensor applications, and discusses the challenges facing non- carbon 2D material-FET biosensors and their future perspectives.
Abstract: In recent years, field-effect transistors (FETs) have been very promising for biosensor applications due to their high sensitivity, real-time applicability, scalability, and prospect of integrating measurement system on a chip. Non-carbon 2D materials, such as transition metal dichalcogenides (TMDCs), hexagonal boron nitride (h-BN), black phosphorus (BP), and metal oxides, are a group of new materials that have a huge potential in FET biosensor applications. In this work, we review the recent advances and remarkable studies of non-carbon 2D materials, in terms of their structures, preparations, properties and FET biosensor applications. We will also discuss the challenges facing non-carbon 2D materials-FET biosensors and their future perspectives.
15 citations
TL;DR: In this paper , a WO3-based Field Effect Transistor (FET) was used as a phototransistor for photo sensing applications, which achieved the photo-to-dark current ratio (PDCR) in the order of 10 under 650 nm illumination.
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TL;DR: This Review highlights the recent developments and reflects the impact of nanoscience on sensor technology, which can be improved and novel sensor concepts based on bottom-up approaches show that the sensor properties can be controlled by molecular design.
Abstract: Sensor technology is one of the most important key technologies of the future with a constantly increasing number of applications, both in the industrial and in the private sectors. More and more gas sensors are used for the control of technical processes, in environment monitoring, healthcare, and automobiles. Consequently, the development of fast and sensitive gas sensors with small cross sensitivity is the subject of intense research, propelled by strategies based on nanoscience and -technology. Established systems can be improved and novel sensor concepts based on bottom-up approaches show that the sensor properties can be controlled by molecular design. This Review highlights the recent developments and reflects the impact of nanoscience on sensor technology.
1,194 citations
"Temperature Dependent Electrical Ch..." refers background in this paper
...This conductivity depends on surface potential eVsurface , which lowers down as temperature (T) increases because of increase in carrier concentration [32]....
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TL;DR: In this paper, the authors fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration.
Abstract: We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30–60 cm2/Vs, relatively independent of thickness (15–90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ∼50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.
640 citations
"Temperature Dependent Electrical Ch..." refers background in this paper
...Reports evidence the ambipolar behavior demonstrated by ZnO nanowires [14], MoS2 [15] and ZnO/Pentacene bilayer [16]....
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...[2] P. Dwivedi, S. Das, and S. Dhanekar, “Wafer-scale synthesized MoS2 /Porous Silicon nanostructures for efficient and selective ethanol sensing at room temperature,” ACS Appl....
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...[15] W. Bao, X. Cai, D. Kim, K. Sridhara, and M. S. Fuhrer, “High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects,” Appl....
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TL;DR: In this paper, the authors fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration.
Abstract: We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ~50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobility.
613 citations
TL;DR: It is demonstrated that the sensitivity of NW-FET sensors can be exponentially enhanced in the subthreshold regime where the gating effect of molecules bound on a surface is the most effective due to the reduced screening of carriers in NWs.
Abstract: Nanowire field-effect transistors (NW-FETs) are emerging as powerful sensors for detection of chemical/biological species with various attractive features including high sensitivity and direct electrical readout. Yet to date there have been limited systematic studies addressing how the fundamental factors of devices affect their sensitivity. Here we demonstrate that the sensitivity of NW-FET sensors can be exponentially enhanced in the subthreshold regime where the gating effect of molecules bound on a surface is the most effective due to the reduced screening of carriers in NWs. This principle is exemplified in both pH and protein sensing experiments where the operational mode of NW-FET biosensors was tuned by electrolyte gating. The lowest charge detectable by NW-FET sensors working under different operational modes is also estimated. Our work shows that optimization of NW-FET structure and operating conditions can provide significant enhancement and fundamental understanding for the sensitivity limits ...
529 citations
"Temperature Dependent Electrical Ch..." refers background in this paper
...is the ratio of the ideal sub-threshold slope at room temperature to the measured SS of a particular device [30], [31]....
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TL;DR: In this paper, thin films of tungsten oxide were deposited on SnO2:F coated glass using pulsed laser deposition using Raman spectroscopy, and the decrease of the optical band gap was ascribed to a decrease of WO/O-W −W −O ratio correlated to an increase of the cluster size of tengsten oxide with crystallinity.
242 citations