Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
TL;DR: In this article, temperature dependent electrical transport properties were carried out for InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy.
Abstract: InN/GaN heterostructure based Schottky diodes were fabricated by plasma-assisted molecular beam epitaxy. The temperature dependent electrical transport properties were carried out for InN/GaN heterostructure. The barrier height and the ideality factor of the Schottky diodes were found to be temperature dependent. The temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. The higher value of the ideality factor and its temperature dependence suggest that the current transport is primarily dominated by thermionic field emission (TFE) other than thermionic emission (TE). The room temperature barrier height obtained by using TE and TFE models were 1.08 and 1.43 eV, respectively.
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TL;DR: In this article, Schottky barrier heights and current transport modes were analyzed using a combination of currentvoltage (I-V), capacitance-voltage and internal photoemission (IPE) measurements for Pd, Ni, Pt and Au.
Abstract: A systematic study of Schottky barriers fabricated on (010) β-Ga2O3 substrates is reported Schottky barrier heights (SBHs) and current transport modes were analyzed using a combination of current-voltage (I-V), capacitance-voltage (C-V) and internal photoemission (IPE) measurements for Pd, Ni, Pt and Au Schottky diodes Diodes fabricated for each metal choice displayed nearly ideal I-V characteristics with room temperature ideality factors ranging from 103 to 109, reverse leakage currents below detection limits and thermionic emission as the dominant current transport mode for Ni, Pt and Pd The SBH values varied depending on the metal choice, ranging from 127 V for Pd and 154 V for Ni to 158 V for Pt and 171 V for Au, as determined using IPE measurements Close agreement was observed between these IPE-determined SBH values and the barrier height values from I-V and C-V measurements for the Ni, Pd and Pt Schottky barriers In contrast, for Au, a lack of general agreement was seen between the SBH me
135 citations
TL;DR: In this paper, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nodes-based opto-electronic devices.
Abstract: In the last few years, there has been remarkable progress in the development of group III-nitride based materials because of their potential application in fabricating various optoelectronic devices such as light emitting diodes, laser diodes, tandem solar cells and field effect transistors. In order to realize these devices, growth of device quality heterostructures are required. One of the most interesting properties of a semiconductor heterostructure interface is its Schottky barrier height, which is a measure of the mismatch of the energy levels for the majority carriers across the heterojunction interface. Recently, the growth of non-polar III-nitrides has been an important subject due to its potential improvement on the efficiency of III-nitride-based opto-electronic devices. It is well known that the c-axis oriented optoelectronic devices are strongly affected by the intrinsic spontaneous and piezoelectric polarization fields, which results in the low electron-hole recombination efficiency. One of the useful approaches for eliminating the piezoelectric polarization effects is to fabricate nitride-based devices along non-polar and semi-polar directions. Heterostructures grown on these orientations are receiving a lot of focus due to enhanced behaviour. In the present review article discussion has been carried out on the growth of III-nitride binary alloys and properties of GaN/Si, InN/Si, polar InN/GaN, and nonpolar InN/GaN heterostructures followed by studies on band offsets of III-nitride semiconductor heterostructures using the x-ray photoelectron spectroscopy technique. Current transport mechanisms of these heterostructures are also discussed.
56 citations
TL;DR: In this paper, a 2D/3D heterojunction type photodetector was demonstrated by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method.
Abstract: Layered transition metal dichalcogenide materials grown over a conventional 3D semiconductor substrate have ignited a spark of interest in the electronics industry. The integration of these 2D layered materials extensively addresses the formidable challenges faced by a new generation of opto-electronic and photovoltaic devices. Herein, we have demonstrated a 2D/3D heterojunction type photodetector by depositing MoS2 on a GaN substrate with a mass-scalable sputtering method. Spectroscopic and microscopic characterizations expose the signature of the highly crystalline, homogeneous and controlled growth of a deposited few-layer MoS2 film. The greater light absorption of few-layer MoS2 results in the high performance of the MoS2/GaN photodetector. Our device shows high external spectral responsivity (~103 A W−1) and detectivity (~1011 Jones) with a very fast response time (~5 ms). Our obtained results are significantly better than previous MoS2- and GaN-based photodetectors. This work unveils a new perspective in MoS2/GaN heterojunctions for high-performance optoelectronic applications.
46 citations
TL;DR: In this paper, a H2 sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response and recovery times of ZnO NRs/Si/ZnONRs sensors.
Abstract: Uniformly distributed and defect-free vertically aligned ZnO nanorods (NRs) with high aspect ratio are deposited on Si by sputtering technique. X-ray diffraction along with transmission electron microscopy studies confirmed the single crystalline wurtzite structure of ZnO. Absence of wide band emission in photoluminescence spectra showed defect-free growth of ZnO NRs which was further conformed by diamagnetic behavior of the NRs. H2 sensing mechanism based on the change in physical dimension of channel is proposed to explain the fast response (∼21.6 s) and recovery times (∼27 s) of ZnO NRs/Si/ZnO NRs sensors. Proposed H2 sensor operates at low temperature (∼70 °C) unlike the existing high temperature (>150 °C) sensors.
41 citations
TL;DR: The results reveal that temperature strongly affects the sensitivity of the device and it increases from 21% to 157% for 1% hydrogen with an increase in temperature, and the proposed methodology can be readily applied to other combinations of heterostructures for sensing different gas analytes.
Abstract: We report a MoS2/GaN heterojunction-based gas sensor by depositing MoS2 over a GaN substrate via a highly controllable and scalable sputtering technique coupled with a post sulfurization process in a sulfur-rich environment. The microscopic and spectroscopic measurements expose the presence of highly crystalline and homogenous few atomic layer MoS2 on top of molecular beam epitaxially grown GaN film. Upon hydrogen exposure, the molecular adsorption tuned the barrier height at the MoS2/GaN interface under the reverse biased condition, thus resulting in high sensitivity. Our results reveal that temperature strongly affects the sensitivity of the device and it increases from 21% to 157% for 1% hydrogen with an increase in temperature (25-150 °C). For a deeper understanding of carrier dynamics at the heterointerface, we visualized the band alignment across the MoS2/GaN heterojunction having valence band and conduction band offset values of 1.75 and 0.28 eV. The sensing mechanism was demonstrated based on an energy band diagram at the MoS2/GaN interface in the presence and absence of hydrogen exposure. The proposed methodology can be readily applied to other combinations of heterostructures for sensing different gas analytes.
38 citations
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TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
Abstract: Theoretical models of Schottky-barrier height formation are reviewed. A particular emphasis is placed on the examination of how these models agree with general physical principles. New concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
1,064 citations
TL;DR: In this article, the III-V nitrides were used as a high-performance photovoltaic material with open-circuit voltages up to 2.4V and internal quantum efficiencies as high as 60%.
Abstract: We experimentally demonstrate the III-V nitrides as a high-performance photovoltaic material with open-circuit voltages up to 2.4V and internal quantum efficiencies as high as 60%. GaN and high-band gap InGaN solar cells are designed by modifying PC1D software, grown by standard commercial metal-organic chemical vapor deposition, fabricated into devices of variable sizes and contact configurations, and characterized for material quality and performance. The material is primarily characterized by x-ray diffraction and photoluminescence to understand the implications of crystalline imperfections on photovoltaic performance. Two major challenges facing the III-V nitride photovoltaic technology are phase separation within the material and high-contact resistances.
560 citations
Book•
01 Jan 1969
TL;DR: In this article, the authors present a review of the properties of Semiconductors and their properties in terms of physics and properties of devices, including the following: 1.1 Introduction. 1.2 Crystal Structure.
Abstract: Introduction. Part I Semiconductor Physics. Chapter 1 Physics and Properties of Semiconductors-A Review. 1.1 Introduction. 1.2 Crystal Structure. 1.3 Energy Bands and Energy Gap. 1.4 Carrier Concentration at Thermal Equilibrium. 1.5 Carrier-Transport Phenomena. 1.6 Phonon, Optical, and Thermal Properties. 1.7 Heterojunctions and Nanostructures. 1.8 Basic Equations and Examples. Part II Device Building Blocks. Chapter 2 p-n Junctions. 2.1 Introduction. 2.2 Depletion Region. 2.3 Current-Voltage Characteristics. 2.4 Junction Breakdown. 2.5 Transient Behavior and Noise. 2.6 Terminal Functions. 2.7 Heterojunctions. Chapter 3 Metal-Semiconductor Contacts. 3.1 Introduction. 3.2 Formation of Barrier. 3.3 Current Transport Processes. 3.4 Measurement of Barrier Height. 3.5 Device Structures. 3.6 Ohmic Contact. Chapter 4 Metal-Insulator-Semiconductor Capacitors. 4.1 Introduction. 4.2 Ideal MIS Capacitor. 4.3 Silicon MOS Capacitor. Part III Transistors. Chapter 5 Bipolar Transistors. 5.1 Introduction. 5.2 Static Characteristics. 5.3 Microwave Characteristics. 5.4 Related Device Structures. 5.5 Heterojunction Bipolar Transistor. Chapter 6 MOSFETs. 6.1 Introduction. 6.2 Basic Device Characteristics. 6.3 Nonuniform Doping and Buried-Channel Device. 6.4 Device Scaling and Short-Channel Effects. 6.5 MOSFET Structures. 6.6 Circuit Applications. 6.7 Nonvolatile Memory Devices. 6.8 Single-Electron Transistor. Chapter 7 JFETs, MESFETs, and MODFETs. 7.1 Introduction. 7.2 JFET and MESFET. 7.3 MODFET. Part IV Negative-Resistance and Power Devices. Chapter 8 Tunnel Devices. 8.1 Introduction. 8.2 Tunnel Diode. 8.3 Related Tunnel Devices. 8.4 Resonant-Tunneling Diode. Chapter 9 IMPATT Diodes. 9.1 Introduction. 9.2 Static Characteristics. 9.3 Dynamic Characteristics. 9.4 Power and Efficiency. 9.5 Noise Behavior. 9.6 Device Design and Performance. 9.7 BARITT Diode. 9.8 TUNNETT Diode. Chapter 10 Transferred-Electron and Real-Space-Transfer Devices. 10.1 Introduction. 10.2 Transferred-Electron Device. 10.3 Real-Space-Transfer Devices. Chapter 11 Thyristors and Power Devices. 11.1 Introduction. 11.2 Thyristor Characteristics. 1 1.3 Thyristor Variations. 11.4 Other Power Devices. Part V Photonic Devices and Sensors. Chapter 12 LEDs and Lasers. 12.1 Introduction. 12.2 Radiative Transitions. 12.3 Light-Emitting Diode (LED). 12.4 Laser Physics. 12.5 Laser Operating Characteristics. 12.6 Specialty Lasers. Chapter 13 Photodetectors and Solar Cells. 13.1 Introduction. 13.2 Photoconductor. 13.3 Photodiodes. 13.4 Avalanche Photodiode. 13.5 Phototransistor. 13.6 Charge-Coupled Device (CCD). 13.7 Metal-Semiconductor-Metal Photodetector. 13.8 Quantum-Well Infrared Photodetector. 13.9 Solar Cell. Chapter 14 Sensors. 14.1 Introduction. 14.2 Thermal Sensors. 14.3 Mechanical Sensors. 14.4 Magnetic Sensors. 14.5 Chemical Sensors. Appendixes. A. List of Symbols. B. International System of Units. C. Unit Prefixes. D. Greek Alphabet. E. Physical Constants. F. Properties of Important Semiconductors. G. Properties of Si and GaAs. H. Properties of SiO, and Si3N. Index.
487 citations
TL;DR: In this paper, the III-nitride photovoltaic cells with external quantum efficiency as high as 63% were reported on (0001) sapphire substrates with xIn=12%.
Abstract: We report on III-nitride photovoltaic cells with external quantum efficiency as high as 63%. InxGa1−xN/GaN p-i-n double heterojunction solar cells are grown by metal-organic chemical vapor deposition on (0001) sapphire substrates with xIn=12%. A reciprocal space map of the epitaxial structure showed that the InGaN was coherently strained to the GaN buffer. The solar cells have a fill factor of 75%, short circuit current density of 4.2 mA/cm2, and open circuit voltage of 1.81 V under concentrated AM0 illumination. It was observed that the external quantum efficiency can be improved by optimizing the top contact grid.
430 citations