Temperature dependent electrical transport studies of self-aligned ZnO nanorods/Si heterostructures deposited by sputtering

Abstract: DC reactive magnetron sputtering of zinc target in argon-oxygen sputtering atmosphere has been used to grow ZnO thin films/nanorods on Si in a wide substrate temperature range of 300–750 °C and under different sputtering conditions, namely, DC power, sputtering pressure and oxygen percentage in the sputtering atmosphere. Powder X-ray diffraction, Raman spectroscopy and a combination of top-down and cross-sectional scanning electron microscopy studies of ZnO films and nanorods grown under different conditions, have shown that substrate temperature critically controls their growth behavior and morphology, eventually resulting in the growth of vertically c-axis oriented, highly aligned and separated ZnO nanorods at substrate temperatures of 700–750 °C. The strongly substrate temperature dependent growth of nanorods is explained by considering that the growth above 600 °C, takes place in the ‘desorption regime’, in which, the surface diffusion length decreases exponentially with temperature. The diameter of nanorods increases with increase of DC power or decrease of sputtering pressure, which is attributed to the increase of surface diffusion length at higher deposition flux. The morphology of ZnO nanorods is not significantly affected by oxygen percentage in the sputtering atmosphere, since it does not influence the deposition flux.

Abstract: ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO2/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 109 to 11.28 x 109 dyne/cm2 with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ∼3.275 eV to ∼3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

Abstract: Vertically well aligned ZnO nanorods (NRs) were grown on Si(100) substrate using RF magnetron sputtering technique. Scanning electron microscopy images confirms uniform distribution of NRs on 2 in. wafer with average diameter, height and density being ∼75 nm, ∼850 nm, and ∼1.5 × 1010 cm−2, respectively. X-ray diffraction reveals that the ZnO NRs are grown along c-axis direction with wurtzite crystal structure. Cathodoluminescence spectroscopy, which shows a single strong peak around 3.24 eV with full width half maxima 130 meV, indicates the high crystalline and optical quality of ZnO and very low defect density. Vertically aligned nanosensors were fabricated by depositing gold circular Schottky contacts on ZnO NRs. Resistance responses of nanosensors were observed in the range from 50 to 150 °C in 1% and 5% hydrogen in argon environment, which is below and above the explosive limit (4%) of hydrogen in air. The nanosensor's sensitivity increases from 11% to 67% with temperature from 50 to 150 °C and also s...

Abstract: We report on a systematic investigation of temperature dependent current–voltage (I–V) characteristics of Pd/ZnO Schottky barrier diodes in the 30–300 K temperature range. The ideality factor was observed to decrease with increase in temperature, whilst the barrier height increases with increase in temperature. The observed trend has been attributed to barrier inhomogeneities, which results in a distribution of barrier heights at the interface. Using the dependence of saturation current values on temperature, we have calculated the Richardson constant (A⁎) which was investigated in the two distinct temperature regions: 140–200 K and 210–300 K and values of 3×10−12 and 3×10−9 A cm−2 K−2 were obtained, respectively. A mean barrier height of 0.97 eV was obtained in the 140–300 K temperature range. Applying the barrier height inhomogeneities correction, the value of A⁎ was obtained from the modified Richardson plots as 39.43 and 39.03 A cm−2 K−2 in the 140–200 K and 210–300 K temperature range. The modified Richardson constant (A⁎⁎) has proved to be strongly affected by barrier inhomogeneities and dependent on contact quality.

Abstract: An overview of β-Ga2O3-based UV photodetectors (PD) as well as their status and promises are presented in this chapter. UV detectors and their applications are highlighted in the introduction followed by a brief discussion on β-Ga2O3 and its many potentials and challenges. The figures of merit for a PD are touched upon, especially from the point of view of UV detection. β-Ga2O3 UV detector configurations such as metal-semiconductor-metal (MSM) and Schottky diodes are discussed, and their recent advances and state-of-the-art results are presented in parallel. A comparison in terms of device performance between β-Ga2O3 and the competing III-nitride technology for UV detection is also highlighted. Finally, the future outlook and challenges associated with this emerging UV technology are summarized.

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Abstract: We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.

Abstract: A dipole-layer approach is presented, which leads to analytic solutions to the potential and the electronic transport at metal-semiconductor interfaces with arbitrary Schottky-barrier-height profiles. The presence of inhomogeneities in the Schottky-barrier height is shown to lead to a coherent explanation of many anomalies in the experimental results. These results suggest that the formation mechanism of the Schottky barrier is locally nonuniform at common, polycrystalline, metal-semiconductor interfaces.

Abstract: Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal?organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour?liquid?solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro-?and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I?V characteristics of ZnO:P nanowire/ZnO:Ga p?n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence characteristics aimed at the development of white LEDs are demonstrated. Although some of the presented LEDs show visible emission for applied biases in excess of 10 V, optimized structures are expected to provide the same emission at much lower voltage. Finally, lasing from ZnO nanorods is briefly reviewed. An example of a recent whispering gallery mode (WGM) lasing from ZnO is demonstrated as a way to enhance the stimulated emission from small size structures.

Abstract: ZnO was one of the first metal oxides used in dye-sensitized solar cells (DSCs). It exhibits a unique combination of potentially interesting properties such as high bulk electron mobility and probably the richest variety of nanostructures based on a very wide range of synthesis routes. However, in spite of the huge amount of literature produced in the past few years, the reported efficiencies of ZnO-based solar cells are still far from their TiO2 counterparts. The origin of this striking difference in performance is analyzed and discussed with the perspective of future applications of ZnO in dye-sensitized solar cells and related devices. In this regard, a change of focus of the current research on ZnO-based DSCs (from morphology to surface control) is suggested.