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Temporal evolution of nanoporous layer in off-normally ion irradiated GaSb

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TLDR
In this paper, the coexistence of GaSb and Sb2O3 in the surface layer was investigated in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface.
Abstract
Room temperature irradiation of GaSb by 60 keV Ar+-ions at an oblique incidence of 60° leads to simultaneous formation of a nanoporous layer and undulations at the interface with the underlying substrate. Interestingly, with increasing ion fluence, a gradual embedding of the dense nanoporous layer takes place below ridge-like structures (up to the fluence of 1 × 1017 ions cm−2), which get extended to form a continuous layer (at fluences ≥4 × 1017 ions cm−2). Systematic compositional analyses reveal the co-existence of Ga2O3 and Sb2O3 in the surface layer. The results are discussed in terms of a competition between ion-induced defect accumulation and re-deposition of sputtered atoms on the surface.

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Citations
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Nonlinear optical response of bulk ZnO crystals with different content of intrinsic defects

TL;DR: In this article, the nonlinear optical properties of defect-rich ZnO single crystals were studied in details within the excitation of the continuous wave (CW) and pulsed laser radiation at 532 nm (2.33
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Clustered vacancies in ZnO: chemical aspects and consequences on physical properties

TL;DR: In this paper, 1.2 MeV Ar ion beam is used to incorporate defects in granular ZnO. The evolution of defective state with irradiation fluence 1 x 10^14 and 1 × 10^16 ions/cm2 has been monitored using XPS, PL and Raman spectroscopic study.
Journal ArticleDOI

Evolution of porous network in GaSb under normally incident 60 keV Ar+-ion irradiation

TL;DR: In this paper, the authors proposed a model addressing a competition between ion-induced defect driven growth of the nanoporous layer and redeposition of sputtered target atoms on the growing layer.
Journal ArticleDOI

60 keV Ar+-ion induced modification of microstructural, compositional, and vibrational properties of InSb

TL;DR: In this article, room temperature irradiation of InSb(111) by 60 keV Ar+-ions at normal (0°) and oblique (60°) angles of incidence led to the formation of nanoporous structure in the high fluence regime of 1.5 cm−2.
References
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Journal ArticleDOI

Empirical atomic sensitivity factors for quantitative analysis by electron spectroscopy for chemical analysis

TL;DR: In this article, an empirical set has been developed, based upon data from 135 compounds of 62 elements, for which the sensitivity factors are based on intensity ratios of spectral lines with F1s as a primary standard, value unity, and K2p3/2 as a secondary standard.
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Formation of Ordered Nanoscale Semiconductor Dots by Ion Sputtering.

TL;DR: A formation process for semiconductor quantum dots based on a surface instability induced by ion sputtering under normal incidence is presented andCrystalline dots 35 nanometers in diameter and arranged in a regular hexagonal lattice were produced on gallium antimonide surfaces.
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The physics and technology of gallium antimonide: An emerging optoelectronic material

TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
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CASINO: A new monte carlo code in C language for electron beam interaction —part I: Description of the program

TL;DR: The CASINO program as discussed by the authors is a single scattering Monte CArlo SImulation of electroN trajectory in sOlid specially designed for low-beam interaction in a bulk and thin foil.
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Tridyn-binary collision simulation of atomic collisions and dynamic composition changes in solids

TL;DR: In this article, a computer program is described which treats the slowing down of ions in solids, and the associated formation of recoil atom cascades in the binary collision approximation for multicomponent media, taking into account dynamic alterations of the local composition which arise from the deposition of implanted ions and the collisional transport of target atoms.
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