Terahertz semiconductor heterostructure laser
01 Jan 2003-Vol. 171, pp 145-152
TL;DR: In this article, a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure is presented.
Abstract: Semiconductor devices have become indispensable for generating electromagnetic radiation in everyday applications. Visible and infrared diode lasers are at the core of information technology, and at the other end of the spectrum, microwave and radio-frequency emitters enable wireless communications. But the terahertz region (1-10 THz; 1 THz = 10(12) Hz) between these ranges has remained largely underdeveloped, despite the identification of various possible applications--for example, chemical detection, astronomy and medical imaging. Progress in this area has been hampered by the lack of compact, low-consumption, solid-state terahertz sources. Here we report a monolithic terahertz injection laser that is based on interminiband transitions in the conduction band of a semiconductor (GaAs/AlGaAs) heterostructure. The prototype demonstrated emits a single mode at 4.4 THz, and already shows high output powers of more than 2 mW with low threshold current densities of about a few hundred A cm(-2) up to 50 K. These results are very promising for extending the present laser concept to continuous-wave and high-temperature operation, which would lead to implementation in practical photonic systems.
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TL;DR: An overview of the status of the terahertz technology, its uses and its future prospects are presented in this article, with a focus on the use of the waveband in a wide range of applications.
Abstract: Research into terahertz technology is now receiving increasing attention around the world, and devices exploiting this waveband are set to become increasingly important in a very diverse range of applications. Here, an overview of the status of the technology, its uses and its future prospects are presented.
5,512 citations
TL;DR: Terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules, as well as novel, higher-power terahertz sources.
Abstract: Terahertz spectroscopy systems use far-infrared radiation to extract molecular spectral information in an otherwise inaccessible portion of the electromagnetic spectrum. Materials research is an essential component of modern terahertz systems: novel, higher-power terahertz sources rely heavily on new materials such as quantum cascade structures. At the same time, terahertz spectroscopy and imaging provide a powerful tool for the characterization of a broad range of materials, including semiconductors and biomolecules.
2,673 citations
TL;DR: An active metamaterial device capable of efficient real-time control and manipulation of terahertz radiation is demonstrated, which enables modulation of THz transmission by 50 per cent, an order of magnitude improvement over existing devices.
Abstract: Metamaterial structures are taught which provide for the modulation of terahertz frequency signals. Each element within an array of metamaterial (MM) elements comprises multiple loops and at least one gap. The MM elements may comprise resonators with conductive loops and insulated gaps, or the inverse in which insulated loops are present with conductive gaps; each providing useful transmissive control properties. The metamaterial elements are fabricated on a semiconducting substrate configured with a means of enhancing or depleting electrons from near the gaps of the MM elements. An on to off transmissivity ratio of about 0.5 is achieved with this approach. Embodiments are described in which the MM elements incorporated within a Quantum Cascade Laser (QCL) to provide surface emitting (SE) properties.
1,978 citations
TL;DR: In this paper, the state-of-the-art and future prospects for terahertz quantum-cascade laser systems are reviewed, including efforts to increase their operating temperatures, deliver higher output powers and emit longer wavelengths.
Abstract: Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or more of continuous-wave coherent radiation throughout the terahertz range — the spectral regime between millimetre and infrared wavelengths, which has long resisted development. This paper reviews the state-of-the-art and future prospects for these lasers, including efforts to increase their operating temperatures, deliver higher output powers and emit longer wavelengths.
1,426 citations
TL;DR: In this article, a review of the application of terahertz time-domain spectroscopy to bulk and nanostructured semiconductors is presented, where the authors present a pump-probe scheme to monitor the nonequilibrium time evolution of carriers and low energy excitations with sub-ps time resolution.
Abstract: Time-resolved, pulsed terahertz spectroscopy has developed into a powerful tool to study charge carrier dynamics in semiconductors and semiconductor structures over the past decades. Covering the energy range from a few to about 100 meV, terahertz radiation is sensitive to the response of charge quasiparticles, e.g., free carriers, polarons, and excitons. The distinct spectral signatures of these different quasiparticles in the THz range allow their discrimination and characterization using pulsed THz radiation. This frequency region is also well suited for the study of phonon resonances and intraband transitions in low-dimensional systems. Moreover, using a pump-probe scheme, it is possible to monitor the nonequilibrium time evolution of carriers and low-energy excitations with sub-ps time resolution. Being an all-optical technique, terahertz time-domain spectroscopy is contact-free and noninvasive and hence suited to probe the conductivity of, particularly, nanostructured materials that are difficult or impossible to access with other methods. The latest developments in the application of terahertz time-domain spectroscopy to bulk and nanostructured semiconductors are reviewed.
987 citations
References
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TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Abstract: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.
9,917 citations
TL;DR: In this article, the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner to inject spin-polarized charge into a non-magnetic semiconductor device.
Abstract: The field of magnetoelectronics has been growing in practical importance in recent years1 For example, devices that harness electronic spin—such as giant-magnetoresistive sensors and magnetoresistive memory cells—are now appearing on the market2 In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge Much work has focused on the use of ferromagnetic metallic contacts3,4, but it has proved exceedingly difficult to demonstrate polarized spin injection More recently, two groups5,6 have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%) Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light
1,650 citations
TL;DR: A semiconductor injection laser that differs in a fundamental way from diode lasers has been demonstrated and is built out of quantum semiconductor structures that were grown by molecular beam epitaxy and designed by band structure engineering.
Abstract: A semiconductor injection laser that differs in a fundamental way from diode lasers has been demonstrated. It is built out of quantum semiconductor structures that were grown by molecular beam epitaxy and designed by band structure engineering. Electrons streaming down a potential staircase sequentially emit photons at the steps. The steps consist of coupled quantum wells in which population inversion between discrete conduction band excited states is achieved by control of tunneling. A strong narrowing of the emission spectrum, above threshold, provides direct evidence of laser action at a wavelength of 4.2 micrometers with peak powers in excess of 8 milliwatts in pulsed operation. In quantum cascade lasers, the wavelength, entirely determined by quantum confinement, can be tailored from the mid-infrared to the submillimeter wave region in the same heterostructure material.
1,332 citations
TL;DR: Application of small static magnetic fields results in a Hanle effect which permits determination of the spin-relaxation time, and the unique features of the method should make it applicable to a wide range of studies.
Abstract: The strong inequivalence of spin-up and spin-down subbands in a ferromagnet causes a coupling between the charge and spin transport across the interface of a ferromagnetic and a contiguous paramagnetic metal. This allows the use of sensitive electronic measurements to probe spin transport. Application of small static magnetic fields results in a Hanle effect which permits determination of the spin-relaxation time ${\mathrm{T}}_{2}$. The unique features of the method should make it applicable to a wide range of studies.
1,151 citations
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TL;DR: In this paper, the authors describe the technology necessary to perform terahertz "T-ray" imaging, novel imaging techniques, and commercial applications of T-ray imaging.
Abstract: The use of terahertz pulses for imaging has opened new possibilities for scientific and industrial applications in the terahertz frequency range. In this article, we describe the technology necessary to perform terahertz "T-ray" imaging, novel imaging techniques, and commercial applications of T-ray imaging.
874 citations