The adsorption of oxygen on clean silicon surfaces
TL;DR: In this article, the adsorption of oxygen on clean silicon surfaces produced by crushing in vacuo has been examined in the pressure range 30-200 μ Hg of oxygen at room temperature.
About: This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1960-05-01. It has received 44 citations till now. The article focuses on the topics: Adsorption & Silicon.
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TL;DR: In this article, high-resolution electron energy loss spectroscopy (EELS) was used to study the early stages of silicon oxidation and showed that the first two stages involve atomic oxygen in bridging positions between silicon atoms.
Abstract: Using high-resolution electron energy loss spectroscopy (EELS) the vibrations of Si(111) and Si(100) surfaces in the early stages of oxidation have been investigated. Three different stages of oxidation, the last being the formation of a thin layer of vitreous SiO2 are identified when the surfaces are held at a temperature of 700K during the exposure with molecular oxygen. We show that also the first two stages involve atomic oxygen in bridging positions between silicon atoms. Small exposures at low temperatures (100 K) produce vibrational features of a different, possibly molecular, species. For higher exposures at the same temperature the spectrum again develops the characteristics of atomic oxygen and the molecular species eventually disappears. Exposure at room temperature leads to a mixture of atomic and molecular oxygen for smaller exposures and to purely atomic oxygen for exposures greater than ∼ 102 L. At room temperature even exposures as high as ∼ 1011 L do not produce the spectrum of vitreous SiO2. The same is found for the “natural”, room temperature grown, oxide layer on silicon wafers which we have studied by introducing the sample into the spectrometer through an air-lock. Annealing of the wafer to 700 K produced the characteristic spectrum of vitreous SiO2. The results are discussed in comparison with previous work.
248 citations
TL;DR: In this paper, the adsorption kinetics of O2 on Si(100) between temperatures of 120 and 800 K and oxygen coverages up to 2 monolayers, and the desorption rate constant obtained from time-resolved XPS measurements was orders of magnitude less.
140 citations
TL;DR: In this article, it was shown that the beam-assisted adsorption of carbon monoxide on clean and dirty silicon carbide particles can account for part of the greater accumulation of carbon on dirty silicon compared with that on clean silicon.
106 citations
TL;DR: In this article, the adsorption of oxygen on freshly cleaved (111) faces of silicon was studied by the technique of ellipsometry and a precision of ± 0.02 monolayers was achieved.
101 citations
TL;DR: In this paper, a Schottky barrier is developed on freshly cleaved Si surfaces and on cleaved surfaces given controlled exposure to oxygen and water vapor, and the results are explained in terms of the metal work function, the density of semiconductor surface (or interface) states and the thickness of the interface layer between metal and semiconductor.
Abstract: In an attempt to develop a Schottky barrier sufficiently low to be Ohmic at high current densities, Ca and Mg have been evaporated on freshly cleaved Si surfaces and on cleaved surfaces given controlled exposure to oxygen and water vapor. The results are explained in terms of the metal work function, the density of semiconductor surface (or interface) states and the thickness of the interface layer between metal and semiconductor. For clean metal‐Si interfaces, measurements of barrier height as a function of the metal work function and as a function of the electric field in the Si are shown to determine an upper limit of 0.9 A for the (thickness)/(dielectric constant) of the interface layer, and a lower limit of 2×1014 states/cm2/eV for the surface‐state density. The Thomas‐Fermi shielding length (≈0.5 A for most metals) is proposed as the width of the interface layer. The resulting surface‐state density is in good agreement with that for a free Si surface. This relationship appears to be a fairly general...
92 citations
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01 Jan 1949
TL;DR: In this paper, the scientific foundations of the vacuum technique were discussed and the following papers were published: Scientific foundations of vacuum technique, Scientific foundations for vacuum technique and its application in computer vision.
Abstract: Scientific foundations of vacuum technique , Scientific foundations of vacuum technique , مرکز فناوری اطلاعات و اطلاع رسانی کشاورزی
1,727 citations
TL;DR: The ion-bombardment cleaning method has been successfully applied to the (100) faces of germanium, silicon, and nickel, and to the(0001) face of titanium as mentioned in this paper.
Abstract: The ion‐bombardment cleaning method has been successfully applied to the (100) faces of germanium, silicon, and nickel, and to the (0001) face of titanium. Conditions and precautions necessary for the production of clean surfaces are described. Tests have been made for contamination from the ambient during the cleaning procedure for germanium. It has been shown that contamination approximating one‐half monolayer does not occur under the conditions which were obtained, and that the method is capable of producing surfaces which are atomically clean.Results for clean (100), (111), and (110) germanium faces and the (100) silicon face indicate that the atomic positions in the surface planes are not the same as the corresponding positions in the bulk structure. For (100) nickel and (0001) titanium, the positions of the atoms in the surface planes are in agreement with x‐ray data. In the case of titanium, an unidentified surface structure was present until after several cycles of alternate heating and ion bombardment. In the case of nickel, a double‐spaced surface monolayer and in some cases a single‐spaced, simple‐square structure, attributed to carbon, was present until after several cycles of alternate heating and ion bombardment.
187 citations
59 citations