Journal ArticleDOI
The anodic oxidation of GaAs in an oxygen plasma generated by a D.C. electrical discharge
Fusako Koshiga,Takuo Sugano +1 more
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In this paper, the anodic oxidation of GaAs was carried out in an oxygen plasma generated by a d.c. glow discharge, and the oxide dissolved easily in most commonly used acids and alkalis.About:
This article is published in Thin Solid Films.The article was published on 1979-01-01. It has received 32 citations till now. The article focuses on the topics: Oxide & Glow discharge.read more
Citations
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On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
Hideki Hasegawa,T. Sawada +1 more
TL;DR: In this article, a surface disorder model is proposed to explain all the dynamic anomalies in anodic native oxide/GaAs metal/oxide/semiconductor samples and anodic Al2O3/InP MIS samples.
Journal ArticleDOI
Electrical modeling of compound semiconductor interface for FET device assessment
Hideki Hasegawa,T. Sawada +1 more
TL;DR: In this article, a unified model for GaAs and InP metal-insulator-semiconductor (MIS) systems is presented, which involves particular types of U-shaped distributions of interface states, localized and nonlocalized states, and tunneling processes.
Journal ArticleDOI
Status of the GaAs metal—oxide—semiconductor technology
Takashi Mimura,Masumi Fukuta +1 more
TL;DR: A review of recent and current work on GaAs insulated-gate technology is presented in this article, where various techniques for the formation of heteromorphic and homomorphic dielectrics are outlined.
Journal ArticleDOI
Semiconductor surface passivation
L.G. Meiners,H.H. Wieder +1 more
TL;DR: A review of the current status and the chronological evolution of metal-insulator-semiconductor (MIS) structures including homomorphic surface oxides and synthetic, heteromorphic insulating layers used for the surface passivation of elemental and compound semiconductor surfaces is presented in this paper.
Journal ArticleDOI
Film preparation using plasma or ion activation
TL;DR: In this paper, the capabilities of these techniques are discussed in connection with results obtained for the following film deposition processes: (1) the formation of silicon layers by plasma-induced chemical vapour deposition (CVD) from SiCl4H2; (2) the synthesis of SixNyHz coatings by plasma induced CVD from SiNH3; and (3) the preparation of hard and transparent (diamond-like) carbon films by the condensation of ionized organic species.
References
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Journal ArticleDOI
Anodic Oxidation of GaAs in Mixed Solutions of Glycol and Water
Journal ArticleDOI
Plasma oxidation of GaAs
Robert P. H. Chang,A. K. Sinha +1 more
TL;DR: In this paper, a new process for plasma oxidation of GaAs has been developed, which has amorphous structure, with composition and thickness uniformity better than ±10% over areas ≲1 cm2.
Journal ArticleDOI
The Anodic Oxidation of GaAs in Aqueous H 2 O 2 Solution
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