Proceedings ArticleDOI
The Behavior of SEE Sensitivity at Various TID Levels
Alexander A. Novikov,Alexander A. Pechenkin,Alexander I. Chumakov +2 more
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TLDR
SEU, SEL and SET sensitivity estimation results using laser technique in dependency of TID effects are presented and discussed.Abstract:
SEU, SEL and SET sensitivity estimation results using laser technique in dependency of TID effects are presented and discussed.read more
Citations
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Proceedings ArticleDOI
Analog ASIC TID behavior in a temperature range
A.Y. Borisov,L.N. Kessarinskiy,M.M. Vanzha,M.P. Belova,Y.M. Moskovskaya,Dmitry V. Boychenko,A. Y. Nikiforov,V.V. Enns +7 more
TL;DR: In this paper, total ionizing dose effects in analog configurable application specific integrated circuits such as analog gate arrays and programmable analog gate array were analyzed, and Dominant failure mechanisms and potentially radiation sensitive internal units were determined within −60…+125C temperature range.
Proceedings ArticleDOI
Compendium of TID influence on SEE sensitivity investigation
Alexander A. Novikov,Alexander A. Pechenkin,Alexander I. Chumakov,Artem N. Tsirkov,M.P. Belova +4 more
TL;DR: In this article, total ionizing dose influence on the main single event effect types was investigated. The devices under test are ADUM1200, 8-bit shift register (SEL), SRAMs K6R4016C1D and K6 R4016V1D (SRAMs, SEU), ATMEGA128 (SEU), LM124 (SET) and IRF3710 (SEB) were studied.
Journal ArticleDOI
Effects of total ionizing dose on single event effect sensitivity of FRAMs
TL;DR: In this paper, the impact of total ionizing dose (TID) on single event effect (SEE) sensitivity of FRAMs was investigated, and five types of errors were detected.
Proceedings ArticleDOI
Investigation of ionizing transients by femtosecond X-ray source ionization
M.P. Belova,L.N. Kessarinskiy,A.Y. Borisov,Alexander I. Chumakov,Dmitry V. Boychenko,K.A. Ivanov,I. N. Tsymbalov,Roman V Volkov,Andrey B. Savel'ev +8 more
TL;DR: In this article, the experimental results of the ionizing response in p-i-n diode and operational amplifier under femtosecond X-ray pulse were presented and the possibility of this facility to simulate SEE is discussed.
References
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Proceedings ArticleDOI
"REIS-IE" X-ray tester: description, qualification technique and results, dosimetry procedure
A.S. Artamonov,Alexander I. Chumakov,V.V. Eremin,I. Figurov,O. A. Kalashnikov,O. Nikiforov,O. Sogojan +6 more
TL;DR: The original "REIS-IE" X-ray tester for IC total-dose radiation effects investigation is developed and the qualification technique is described and tests results are presented.
Journal ArticleDOI
Methods for the Prediction of Total-Dose Effects on Modern Integrated Semiconductor Devices in Space: A Review
V. V. Belyakov,V.S. Pershenkov,G. I. Zebrev,A.V. Sogoyan,Alexander I. Chumakov,A. Y. Nikiforov,P. K. Skorobogatov +6 more
TL;DR: In this paper, the main mechanisms and kinetic models of radiation degradation are discussed from the standpoint of the prediction of IC radiation response, and major approaches to the radiation-hardness evaluation of IC components in terms of total-dose effects at low dose rates are reviewed.
Proceedings ArticleDOI
"PICO-4" Single Event Effects Evaluation and Testing Facility Based on Wavelength Tunable Picosecond Laser
A. N. Egorov,Alexander I. Chumakov,Oleg B. Mavritskiy,Alexander A. Pechenkin,DmitriyO. Koltsov,Andrey V. Yanenko +5 more
TL;DR: The PICO-4 simulator as mentioned in this paper uses a tunable picosecond laser source for simulation of single event effects under space environment in Si, GaAs, SiGe etc.
Proceedings ArticleDOI
Compendium of SEE comparative results under ion and laser irradiation
Alexander I. Chumakov,Alexander A. Pechenkin,D. V. Savchenkov,Andrey V. Yanenko,L.N. Kessarinskiy,P. V. Nekrasov,A.V. Sogoyan,Alexander I. Tararaksin,A. L. Vasil’ev,Vasily S. Anashin,Pavel A. Chubunov +10 more
TL;DR: In this paper, a compendium of SEU, SEL, SET, SEB and SEGR comparative results under ion irradiation and focused laser beam is presented, and the possible sources of discrepancies between ion and laser results and the ways of data correction are discussed.
Proceedings ArticleDOI
Synergistic Effects of Total Ionizing Dose on SEU Sensitive SRAMs
TL;DR: In this article, the effects of total ionizing dose and particle fluence on SEU sensitivity of static random access memories have been investigated and the memory imprint effect has been observed to yield varying results.