The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields
TL;DR: In this paper, an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of kp theory, and it is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively.
Abstract: In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of kp theory It is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively The strain enhances the numerical values of the elastic constants The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions
Citations
More filters
TL;DR: In this article, an attempt is made to study the two dimensional (2D) effective electron mass (EEM) in quantum wells (Qws), inversion layers (ILs) and NIPI superlattices of Kane type semiconductors in the presence of strong external photoexcitation on the basis of a newly formulated electron dispersion laws within the framework of k.p. formalism.
16 citations
TL;DR: In this article, the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of nonlinear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of kp formalism.
Abstract: We study the thermoelectric power under classically large magnetic field (TPM) in ultrathin films (UFs), quantum wires (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropies of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k.p formalism. The results of quantum confined III-V compounds form the special cases of our generalized analysis. The TPM has also been studied for quantum confined II-VI, stressed materials, bismuth and carbon nanotubes (CNs) on the basis of respective dispersion relations. It is found taking quantum confined CdGeAs2, InAs, InSb, CdS, stressed n-InSb and Bi that the TPM increases with increasing film thickness and decreasing electron statistics exhibiting quantized nature for all types of quantum confinement. The TPM in CNs exhibits oscillatory dependence with increasing carrier concentration and the signature of the entirely different types of quantum systems are evident from the plots. Besides, under certain special conditions, all the results for all the materials gets simplified to the well-known expression of the TPM for non-degenerate materials having parabolic energy bands, leading to the compatibility test. (C) 2009 Elsevier B.V. All rights reserved.
8 citations
01 Jan 2020
TL;DR: In this article, the authors derived the quantum capacitance in quantum wire field effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane's matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation.
Abstract: This chapter explores the quantum capacitance (\( C_{\text{g}} \)) in quantum wire field-effect transistors (QWFETs) manufactured from completely different technologically vital nonstandard materials by using all types of anisotropies of band structures in addition to splitting of bands due to large fields of the crystals inside the framework of Kane’s matrix methodology that successively generates new 1D dimensional electron energy versus wave vector relation. We derive the \( C_{\text{g}} \) under very low temperature so that the Fermi function tends to unity for QWFETs of \( {\text{Cd}}_{3} {\text{As}}_{2} ,{\text{CdGeAs}}_{2} ,{\text{InSb}},{\text{Hg}}_{1 - x} {\text{Cd}}_{x} {\text{Te}},{\text{InAs}},{\text{GaAs}},{\text{In}}_{1 - x} {\text{Ga}}_{x} {\text{As}}_{y} {\text{P}}_{1 - y} \) IV–VI, stressed materials,\( {\text{Te}},{\text{GaP,PtSb}}_{2} ,{\text{Bi}}_{2} {\text{Te}}_{3} ,{\text{Ge}},{\text{GaSb}} \) and II–V compounds using the appropriate band models. The \( C_{\text{g}} \) becomes the functions of the thickness of the quantum-confined transistors. The \( C_{\text{g}} \) varies with varying film thickness in various quantized steps and saw-tooth manners with different numerical values.
4 citations
01 Jan 2012
TL;DR: In this article, the authors have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wavevector space of the charge carriers, respectively.
Abstract: In this book, we have discussed many aspects of TPSM based on the dispersion relations of the nanostructures of different technologically important materials having different band structures in the presence of 1D, 2D, and 3D confinements of the wave-vector space of the charge carriers, respectively. In this chapter, we discuss few applications in this context in Sect. 14.2 and we shall also present a very brief review of the experimental investigations in Sect. 14.3 which is a sea in itself. Section 14.4 contains the single experimental open research problem.
4 citations
01 Jan 2015
TL;DR: In this article, the experimental determinations of 2D and 3D ERs for HD materials having arbitrary dispersion laws are discussed and theoretical results for bulk specimens of n-Cd3As2 in the absence of band tailing are provided.
Abstract: This chapter suggests the experimental determinations of 2D and 3D ERs for HD materials having arbitrary dispersion laws. The theoretical results for bulk specimens of n-Cd3As2 in the absences of band tailing are in good agreement with the suggested relationship. The concept of band gap measurement in the presence of intense external light waves is also discussed and we present additional five related applications in this context. This chapter contains a single multi-dimensional deep open research problem.
3 citations
References
More filters
35 citations
TL;DR: In this article, an attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels.
Abstract: An attempt is made to study the Einstein relation for the diffusivity‐mobility ratio of the electrons in degenerate n‐type small‐gap semiconductors under strong magnetic field on the basis of three‐band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n‐Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well‐known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.
23 citations
TL;DR: In this article, the effects of varying the orientation of a quantizing magnetic field on the Einstein relation for the diffusivity-mobility ratio of the electrons in stressed Kane-type semiconductors, taking stressed n-InSb as an example, were investigated theoretically.
Abstract: An attempt is made to investigate theoretically the effects of varying the orientation of a quantizing magnetic field on the Einstein relation for the diffusivity-mobility ratio of the electrons in stressed Kane-type semiconductors, taking stressed n-InSb as an example. It is found, that the above ratio oscillates in a periodic manner with changes in the orientation of the magnetic field and increases with increasing electron concentration as expected in degenerate semiconductors. The ratio also exhibits oscillatory magnetic field dependence since the origin of the oscillations in the Einstein relation is the same as that of the Shubnikov de Hass oscillations. The corresponding well-known results for unstressed parabolic energy bands are also obtained from the generalized expressions as special cases.
21 citations
TL;DR: In this article, Auger electron spectroscopy depth profiles are used to show that little or no oxide is left at the HgCdTe/CdS interface even when an aqueous growth electrolyte is utilized.
Abstract: We present here the first demonstration that oxide‐free anodic sulfide layers can be grown on HgCdTe from aqueous electrolytic solutions. Previous work has shown that anodic sulfide films grown from nonaqueous solutions have great potential as passivating layers for HgCdTe. In this work Auger electron spectroscopy depth profiles are used to show that little or no oxide is left at the HgCdTe/CdS interface even when an aqueous growth electrolyte is utilized. Capacitance‐voltage data on metal‐insulator‐semiconductor structures show that the temperature stability of the aqueous sulfide films may be superior to those grown from nonaqueous electrolytes.
17 citations
TL;DR: In this article, it was shown that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers commonly employed on Alx Ga 1−xAlyGa 1−yAs−AlzGa 1 −zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering.
Abstract: Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers commonly employed on AlxGa1−xAs‐AlyGa1−yAs‐AlzGa1−zAs (y≳z) superlattices or quantum‐well heterostructures serves as an effective mask against Si diffusion, and thus impurity‐induced layer disordering. The high‐quality native oxide is produced by the conversion of high‐composition AlxGa1−xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400 °C) in N2 carrier gas.
12 citations