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Journal ArticleDOI

The Electronic Contribution to The Elastic Constants of Strained III–V Materials Under High Magnetic Fields

01 Jan 1995-MRS Proceedings (Springer International Publishing)-Vol. 379, Iss: 1, pp 109-114
TL;DR: In this paper, an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of kp theory, and it is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively.
Abstract: In this paper an attempt is made to study the electronic contribution to the elastic constants of strained III-V materials under high magnetic fields on the basis of kp theory It is found taking strained Hgi - x CdxTe and Ini - xGaxAsyPi-y lattice matched InP as examples that they increase with increasing doping and oscillate with inverse magnetic field respectively The strain enhances the numerical values of the elastic constants The theoretical formulation is in quantitative agreement with the suggested experimental method of determining the above contributions for degenerate materials having arbitrary dispersion laws In addition, the well-known results for strain free wide gap materials in the absence of magnetic field have been obtained from our generalized analysis under certain limiting conditions
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Book ChapterDOI
01 Jan 2022
TL;DR: In this paper, the carrier contribution to the 2nd and 3rd order elastic constants in opto-electronic materials in terahertz frequency by taking the bulk of various optoelectronic compounds was studied.
Abstract: In this chapter, we study the carrier contribution to the 2nd and 3rd order elastic constants (\(\phi_{1}\) and \(\phi_{2}\)) in opto-electronic materials in terahertz frequency by taking the bulk of various opto-electronic compounds. The influence of magnetic quantization, 1D quantization and 2D quantization has also been studied in this context. It appears that both \(\phi_{1}\) and \(\phi_{2}\) changes with wave length, intensity, electron statistics, alloy composition and nano thickness in different ways for all the opto-electronic compounds as considered here and the influence of quantization of band state is also being apparent from all the figures.

3 citations

Book ChapterDOI
01 Jan 2015
TL;DR: The concept of band gap measurement in the presence of intense external light waves is discussed and additional five related applications in this context are presented.
Abstract: The concept of band gap measurement in the presence of intense external light waves is also discussed and we present additional five related applications in this context. Besides, the experimental aspects of the EP from quantized structures have also been discussed very briefly. This chapter contains a single multi-dimensional deep open research problem.

1 citations

References
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Journal ArticleDOI
TL;DR: In this article, an attempt is made to study the Einstein relation for the diffusivity-mobility ratio of the electrons in degenerate n-type small-gap semiconductors under strong magnetic field on the basis of three-band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels.
Abstract: An attempt is made to study the Einstein relation for the diffusivity‐mobility ratio of the electrons in degenerate n‐type small‐gap semiconductors under strong magnetic field on the basis of three‐band Kane model without any approximations of band parameters and incorporating the electron spin and broadening of Landau levels, respectively. It is found, taking n‐Hg1−xCdxTe as an example, that the Einstein relation exhibits an oscillatory magnetic field dependence due to Shubnikov–de Haas effect and decreases with increasing alloy composition. Besides the same ratio increases with increasing electron concentration and is in close agreement with the suggested experimental method of determining the Einstein relation in degenerate semiconductors having arbitrary dispersion laws. In addition, the corresponding well‐known results of parabolic semiconductors both in the presence and absence of magnetic field have been obtained from the generalized expressions under certain limiting conditions.

23 citations

Journal ArticleDOI
TL;DR: In this article, the effects of varying the orientation of a quantizing magnetic field on the Einstein relation for the diffusivity-mobility ratio of the electrons in stressed Kane-type semiconductors, taking stressed n-InSb as an example, were investigated theoretically.
Abstract: An attempt is made to investigate theoretically the effects of varying the orientation of a quantizing magnetic field on the Einstein relation for the diffusivity-mobility ratio of the electrons in stressed Kane-type semiconductors, taking stressed n-InSb as an example. It is found, that the above ratio oscillates in a periodic manner with changes in the orientation of the magnetic field and increases with increasing electron concentration as expected in degenerate semiconductors. The ratio also exhibits oscillatory magnetic field dependence since the origin of the oscillations in the Einstein relation is the same as that of the Shubnikov de Hass oscillations. The corresponding well-known results for unstressed parabolic energy bands are also obtained from the generalized expressions as special cases.

21 citations

Journal ArticleDOI
TL;DR: In this article, Auger electron spectroscopy depth profiles are used to show that little or no oxide is left at the HgCdTe/CdS interface even when an aqueous growth electrolyte is utilized.
Abstract: We present here the first demonstration that oxide‐free anodic sulfide layers can be grown on HgCdTe from aqueous electrolytic solutions. Previous work has shown that anodic sulfide films grown from nonaqueous solutions have great potential as passivating layers for HgCdTe. In this work Auger electron spectroscopy depth profiles are used to show that little or no oxide is left at the HgCdTe/CdS interface even when an aqueous growth electrolyte is utilized. Capacitance‐voltage data on metal‐insulator‐semiconductor structures show that the temperature stability of the aqueous sulfide films may be superior to those grown from nonaqueous electrolytes.

17 citations

Journal ArticleDOI
TL;DR: In this article, it was shown that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers commonly employed on Alx Ga 1−xAlyGa 1−yAs−AlzGa 1 −zAs (y≳z) superlattices or quantum well heterostructures serves as an effective mask against Si diffusion, and thus impurity-induced layer disordering.
Abstract: Data are presented showing that the native oxide that can be formed on high Al composition AlxGa1−xAs (x≳0.7) confining layers commonly employed on AlxGa1−xAs‐AlyGa1−yAs‐AlzGa1−zAs (y≳z) superlattices or quantum‐well heterostructures serves as an effective mask against Si diffusion, and thus impurity‐induced layer disordering. The high‐quality native oxide is produced by the conversion of high‐composition AlxGa1−xAs (x≳0.7) confining layers via H2O vapor oxidation (≳400 °C) in N2 carrier gas.

12 citations