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Journal ArticleDOI

The electronic properties of graphene

TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Abstract: This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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Citations
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Journal ArticleDOI
TL;DR: Gatys et al. as mentioned in this paper summarized the state of research on graphene-based materials from the standpoint of photoelectrochemistry and discussed the prospects and further developments in this exciting field of research.
Abstract: Due to its unique atom-thick 2D structure and remarkable physicochemical properties, graphene has been making a profound impact in many areas of science and technology. In particular, a great deal of recent attention has been attracted to explore graphene and its derivatives for photoelectrochemical applications, with the potential to harness graphene's excellent properties for opening up new opportunities in next generation photoelectrochemical systems. Over the past few years, much work has been done in the design and preparation of novel graphene-based materials for a wide range of applications in photoelectrochemistry, ranging from photoelectrochemical solar cells, photocatalytic decomposition of organic pollutants, photocatalytic splitting of H2O, photocatalytic conversion for fuels, and so on. In this review article, we summarize the state of research on graphene-based materials from the standpoint of photoelectrochemistry. The prospects and further developments in this exciting field of graphene-based materials are also discussed.

352 citations

Journal ArticleDOI
TL;DR: With first-principles DFT calculations, the interaction between Li and carbon in graphene-based nanostructures is investigated as Li is adsorbed on graphene and it is found that the Li/C ratio of less than 1/6 for the single-layer graphene is favorable energetically.
Abstract: With first-principles DFT calculations, the interaction between Li and carbon in graphene-based nanostructures is investigated as Li is adsorbed on graphene. It is found that the Li/C ratio of less than 1/6 for the single-layer graphene is favorable energetically, which can explain what has been observed in Raman spectrum reported recently. In addition, it is also found that the pristine graphene cannot enhance the diffusion energetics of Li ion. However, the presence of vacancy defects can increase the ratio of Li/C largely. With double-vacancy and higher-order defects, Li ion can diffuse freely in the direction perpendicular to the graphene sheets and hence boost the diffusion energetics to some extent.

351 citations

Journal ArticleDOI
TL;DR: This work shows that with a tungsten disulfide (WS2) substrate, the strength of the spin–orbit interaction (SOI) in graphene is very strongly enhanced, which leads to a pronounced low-temperature weak anti-localization effect and a spin-relaxation time two to three orders of magnitude smaller than in graphene on conventional substrates.
Abstract: Interfacial interactions allow the electronic properties of graphene to be modified, as recently demonstrated by the appearance of satellite Dirac cones in graphene on hexagonal boron nitride substrates. Ongoing research strives to explore interfacial interactions with other materials to engineer targeted electronic properties. Here we show that with a tungsten disulfide (WS2) substrate, the strength of the spin-orbit interaction (SOI) in graphene is very strongly enhanced. The induced SOI leads to a pronounced low-temperature weak anti-localization effect and to a spin-relaxation time two to three orders of magnitude smaller than in graphene on conventional substrates. To interpret our findings we have performed first-principle electronic structure calculations, which confirm that carriers in graphene on WS2 experience a strong SOI and allow us to extract a spin-dependent low-energy effective Hamiltonian. Our analysis shows that the use of WS2 substrates opens a possible new route to access topological states of matter in graphene-based systems.

350 citations

Journal ArticleDOI
TL;DR: This study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits.
Abstract: Graphene has attracted enormous attention for radio-frequency transistor applications because of its exceptional high carrier mobility, high carrier saturation velocity, and large critical current density. Herein we report a new approach for the scalable fabrication of high-performance graphene transistors with transferred gate stacks. Specifically, arrays of gate stacks are first patterned on a sacrificial substrate, and then transferred onto arbitrary substrates with graphene on top. A self-aligned process, enabled by the unique structure of the transferred gate stacks, is then used to position precisely the source and drain electrodes with minimized access resistance or parasitic capacitance. This process has therefore enabled scalable fabrication of self-aligned graphene transistors with unprecedented performance including a record-high cutoff frequency up to 427 GHz. Our study defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra–high-frequency circuits.

350 citations

Journal ArticleDOI
TL;DR: A review of the state-of-the art of the research on graphene/semiconductor junctions, the attempts towards a modeling and the most promising applications can be found in this article.

348 citations

References
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Journal ArticleDOI
22 Oct 2004-Science
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Abstract: We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands, and they exhibit a strong ambipolar electric field effect such that electrons and holes in concentrations up to 10 13 per square centimeter and with room-temperature mobilities of ∼10,000 square centimeters per volt-second can be induced by applying gate voltage.

55,532 citations


"The electronic properties of graphe..." refers background in this paper

  • ...Be ause the DC magnetotransport properties ofgraphene are normally measured with the possibilityof tuning its ele troni density by a gate potential(Novoselov et al., 2004), it is important to ompute the ondu tivity kernel, sin e this has dire t experimentalrelevan e....

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  • ...The same polarizability describes the screening of an external field perpendicular to the layers, like the one induced by a gate in electrically doped systems (Novoselov et al., 2004)....

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  • ...Because the DC magnetotransport properties of graphene are normally measured with the possibility of tuning its electronic density by a gate potential (Novoselov et al., 2004), it is important to compute the conductivity kernel, since this has direct experimental relevance....

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  • ...…studies of graphene sta ks have showed that, within reasing number of layers, the system be omes in reas-ingly metalli ( on entration of harge arriers at zero en-ergy gradually in reases), and there appear several typesof ele tron-and-hole-like arries (Morozov et al., 2005;Novoselov et al., 2004)....

    [...]

  • ...The same polarizabilitydes ribes the s reening of an external eld perpendi ularto the layers, like the one indu ed by a gate in ele tri- ally doped systems (Novoselov et al., 2004)....

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Journal ArticleDOI
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
Abstract: Graphene is a rapidly rising star on the horizon of materials science and condensed-matter physics. This strictly two-dimensional material exhibits exceptionally high crystal and electronic quality, and, despite its short history, has already revealed a cornucopia of new physics and potential applications, which are briefly discussed here. Whereas one can be certain of the realness of applications only when commercial products appear, graphene no longer requires any further proof of its importance in terms of fundamental physics. Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena, some of which are unobservable in high-energy physics, can now be mimicked and tested in table-top experiments. More generally, graphene represents a conceptually new class of materials that are only one atom thick, and, on this basis, offers new inroads into low-dimensional physics that has never ceased to surprise and continues to provide a fertile ground for applications.

35,293 citations


"The electronic properties of graphe..." refers background in this paper

  • ...As the current status of the experiment and potential applications have recently been reviewed (Geim and Novoselov, 2007), in this article we mostly concentrate on the theory and more technical aspects of electronic properties of this exciting new material....

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  • ...As the urrent status of the experimentand potential appli ations have re ently been reviewed(Geim and Novoselov, 2007), in this arti le we mostly on entrate on the theory and more te hni al aspe ts ofele troni properties of this ex iting new material....

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  • ...It has also been suggested that Coulomb intera tionsare onsiderably enhan ed in smaller geometries, su has graphene quantum dots (Milton Pereira Junior et al.,2007), leading to unusual Coulomb blo kade e e ts 4(Geim and Novoselov, 2007) and perhaps to magneti phenomena su h as the Kondo e e t....

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  • ...…most versatile systems in ondensedmatter resear h.Besides the unusual basi properties, graphene hasthe potential for a large number of appli ations(Geim and Novoselov, 2007), from hemi al sensors(Chen et al., 2007 ; S hedin et al., 2007) to transistors(Nilsson et al., 2007b; Oostinga et al.,…...

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  • ...Besides the unusual basic properties, graphene has the potential for a large number of applications (Geim and Novoselov, 2007), from chemical sensors (Chen et al....

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Book
01 Jan 1934
TL;DR: The theory of the slipline field is used in this article to solve the problem of stable and non-stressed problems in plane strains in a plane-strain scenario.
Abstract: Chapter 1: Stresses and Strains Chapter 2: Foundations of Plasticity Chapter 3: Elasto-Plastic Bending and Torsion Chapter 4: Plastic Analysis of Beams and Frames Chapter 5: Further Solutions of Elasto-Plastic Problems Chapter 6: Theory of the Slipline Field Chapter 7: Steady Problems in Plane Strain Chapter 8: Non-Steady Problems in Plane Strain

20,724 citations

Journal ArticleDOI
10 Nov 2005-Nature
TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
Abstract: Quantum electrodynamics (resulting from the merger of quantum mechanics and relativity theory) has provided a clear understanding of phenomena ranging from particle physics to cosmology and from astrophysics to quantum chemistry. The ideas underlying quantum electrodynamics also influence the theory of condensed matter, but quantum relativistic effects are usually minute in the known experimental systems that can be described accurately by the non-relativistic Schrodinger equation. Here we report an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation. The charge carriers in graphene mimic relativistic particles with zero rest mass and have an effective 'speed of light' c* approximately 10(6) m s(-1). Our study reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions. In particular we have observed the following: first, graphene's conductivity never falls below a minimum value corresponding to the quantum unit of conductance, even when concentrations of charge carriers tend to zero; second, the integer quantum Hall effect in graphene is anomalous in that it occurs at half-integer filling factors; and third, the cyclotron mass m(c) of massless carriers in graphene is described by E = m(c)c*2. This two-dimensional system is not only interesting in itself but also allows access to the subtle and rich physics of quantum electrodynamics in a bench-top experiment.

18,958 citations


"The electronic properties of graphe..." refers background or methods in this paper

  • ...This amazing re-sult has been observed experimentally (Novoselov et al.,2005a; Zhang et al., 2005) as shown in Fig.20....

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  • ...Adapted from(Novoselov et al., 2005a)....

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  • ...Adapted from (Novoselov et al.,2005a).and hen e σxy,inc. = I/VH = ±4Ne2/h, whi h is thenaive expe tation....

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  • ...The period of os illations ∆n = 4B/Φ0,where B is the applied eld and Φ0 is the ux quantum(Novoselov et al., 2005a).or equivalently: (Oσ+ + O†σ−)φ = (2E/ωc)φ , (100)where σ± = σx ± iσy, and we have de ned the dimen-sionless length s ale: ξ = y ℓB − ℓBk , (101)and 1D harmoni os illator operators: O =…...

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  • ...…invery unusual ways when ompared to ordinary ele tronsif subje ted to magneti elds, leading to new physi alphenomena (Gusynin and Sharapov, 2005; Peres et al.,2006 ) su h as the anomalous integer quantum Hall ef-fe t (IQHE) measured experimentally (Novoselov et al.,2005a; Zhang et al., 2005)....

    [...]

Book
01 Jan 1939

14,299 citations