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The electronic properties of graphene

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TLDR
In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
Abstract
This article reviews the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations. The Dirac electrons can be controlled by application of external electric and magnetic fields, or by altering sample geometry and/or topology. The Dirac electrons behave in unusual ways in tunneling, confinement, and the integer quantum Hall effect. The electronic properties of graphene stacks are discussed and vary with stacking order and number of layers. Edge (surface) states in graphene depend on the edge termination (zigzag or armchair) and affect the physical properties of nanoribbons. Different types of disorder modify the Dirac equation leading to unusual spectroscopic and transport properties. The effects of electron-electron and electron-phonon interactions in single layer and multilayer graphene are also presented.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Graphene: Status and Prospects

TL;DR: This review analyzes recent trends in graphene research and applications, and attempts to identify future directions in which the field is likely to develop.
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Topological insulators and superconductors

TL;DR: Topological superconductors are new states of quantum matter which cannot be adiabatically connected to conventional insulators and semiconductors and are characterized by a full insulating gap in the bulk and gapless edge or surface states which are protected by time reversal symmetry.
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Graphene and Graphene Oxide: Synthesis, Properties, and Applications

TL;DR: An overview of the synthesis, properties, and applications of graphene and related materials (primarily, graphite oxide and its colloidal suspensions and materials made from them), from a materials science perspective.
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The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets

TL;DR: This Review describes how the tunable electronic structure of TMDs makes them attractive for a variety of applications, as well as electrically active materials in opto-electronics.
References
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Why multilayer graphene on 4H-SiC(0001[over ]) behaves like a single sheet of graphene.

TL;DR: It is shown experimentally that multilayer graphene grown on the carbon terminated SiC(0001[over ]) surface contains rotational stacking faults related to the epitaxial condition at the graphene-SiC interface, and via first-principles calculation, that such faults produce an electronic structure indistinguishable from an isolated single graphene sheet in the vicinity of the Dirac point.
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Sub-Poissonian Shot Noise in Graphene

TL;DR: It is found that the minimum conductivity of order e2/h at the Dirac point (when the electron and hole excitations are degenerate) is associated with a maximum of the Fano factor (the ratio of noise power and mean current).
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Induced magnetic ordering by proton irradiation in graphite.

TL;DR: Evidence that proton irradiation of energy 2.25 MeV on highly oriented pyrolytic graphite samples triggers ferro- or ferrimagnetism is provided and magnetic ordering is stable at room temperature.
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Diamagnetism of Graphite

TL;DR: In this article, the conduction-electron magnetic susceptibility of graphite has been calculated by using the Wallace two-dimensional band structure, taking into account the large (in this case) effects of band-to-band transitions which are not included in the Landau-Peierls treatment.
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Screening Effect and Impurity Scattering in Monolayer Graphene

TL;DR: In this article, the static polarization function is calculated in two-dimensional graphite and used for the calculation of the conductivity limited by charged-impurity scattering, and the mobility remains independent of the Fermi energy.
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