Journal ArticleDOI
The field-dependence of carrier mobility in silicon and germanium
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TLDR
In this paper, the variation of mobility with electric field has been measured for n- and p-type silicon and germanium with fields up to 105 V cm, and the variation was found to depend on hole concentration.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1960-01-01. It has received 112 citations till now. The article focuses on the topics: Strained silicon & Silicon.read more
Citations
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Journal ArticleDOI
Large-signal analysis of a silicon Read diode oscillator
D.L. Scharfetter,H.K. Gummel +1 more
TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
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Carrier mobilities in silicon empirically related to doping and field
D.M. Caughey,R.E. Thomas +1 more
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
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A review of some charge transport properties of silicon
TL;DR: In this article, the present knowledge of charge transport properties in silicon, with special emphasis on their application in the design of solid-state devices, is reviewed, and most attention is devoted to experimental findings in the temperature range around 300 K and to high-field properties.
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Avalanche‐Photodiode Frequency Response
TL;DR: In this paper, it was shown that α and β remain constant over a practical range of multiplied photocurrents, and that α does not reduce the device bandwidth as long as the dc multiplication M 0 is less than α/β.
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Drift velocity of electrons and holes and associated anisotropic effects in silicon
TL;DR: In this article, the drift velocity of electrons and holes in high purity silicon has been measured, with the time of flight technique, as a function of electric field (0·1−50 KV/cm) at several temperatures between 77 and 300°K.
References
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Journal ArticleDOI
Mobility of Holes and Electrons in High Electric Fields
TL;DR: In this paper, the field dependence of mobility has been determined for electrons and holes in both germanium and silicon, and the observed critical field at 298\ifmmode^\circ\else\textdegree\fi{}K beyond which $\ensuremath{\mu}$ varies as ${E}^{-}\frac{1}{2}}$.
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The Influence of Interelectronic Collisions on Conduction and Breakdown in Covalent Semi-Conductors
TL;DR: The energy and momentum distributions of electrons in high electric fields are largely determined by interelectronic collisions if the electron densities are sufficiently high; but at lower densities only the energy distribution is affected as discussed by the authors.