Book•
The Materials Science of Thin Films
01 Jan 1991-
TL;DR: A review of materials science can be found in this paper, where the authors describe the properties of thin-film materials and their applications in the following categories: electrical and magnetic properties, optical properties, and material properties.
Abstract: A Review of Materials Science. Vacuum Science and Technology. Physical Vapor Deposition. Chemical Vapor Deposition. Film Formation and Structure. Characterization of Thin Films. Epitaxy. Interdiffusion and Reactions in Thin Films. Mechanical Properties of Thin Films. Electrical and Magnetic Properties of Thin Films. Optical Properties of Thin Films. Metallurgical and Protective Coatings. Modification of Surfaces and Films. Emerging Thin-Film Materials and Applications. Appendixes. Index.
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TL;DR: A low-temperature vapor-assisted solution process is demonstrated to construct polycrystalline perovskite thin films with full surface coverage, small surface roughness, and grain size up to microscale, paving the way for high reproducibility of films and devices.
Abstract: Hybrid organic/inorganic perovskites (e.g., CH3NH3PbI3) as light absorbers are promising players in the field of third-generation photovoltaics. Here we demonstrate a low-temperature vapor-assisted solution process to construct polycrystalline perovskite thin films with full surface coverage, small surface roughness, and grain size up to microscale. Solar cells based on the as-prepared films achieve high power conversion efficiency of 12.1%, so far the highest efficiency based on CH3NH3PbI3 with the planar heterojunction configuration. This method provides a simple approach to perovskite film preparation and paves the way for high reproducibility of films and devices. The underlying kinetic and thermodynamic parameters regarding the perovskite film growth are discussed as well.
2,136 citations
TL;DR: In this article, the authors compared carbon nanotube, metal nanowire networks, and regular metal grids with the usual transparent conductive oxides for optically transparent electrode applications.
Abstract: Increasing demand for raw materials means that alternatives to indium-tin oxide are desired for optically transparent electrode applications. Carbon nanotube, metal nanowire networks and regular metal grids have been investigated as possible options. In this review, these materials and recently rediscovered graphene are compared with the usual transparent conductive oxides.
1,697 citations
Book•
02 Feb 2004TL;DR: The role of stress in mass transport is discussed in this article, where the authors consider anisotropic and patterned films, buckling, bulging, peeling and fracture.
Abstract: 1. Introduction and overview 2. Film stress and substrate curvature 3. Stress in anisotropic and patterned films 4. Delamination and fracture 5. Film buckling, bulging and peeling 6. Dislocation formation in epitaxial systems 7. Dislocation interactions and strain relaxation 8. Equilibrium and stability of surfaces 9. The role of stress in mass transport.
1,562 citations
Cites methods from "The Materials Science of Thin Films..."
...There are many distinctions between the sputtering process and the evaporative process for ̄lm deposition, as described by Ohring (1992) for example....
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TL;DR: In this article, a review highlights the recent advances in the field, using work from this laboratory for illustration, and the understanding of general nanocrystal growth mechanisms serves as the foundation for the rational synthetic control of one-dimensional nanoscale building blocks, novel properties characterization and device fabrication based on nanowire building blocks.
Abstract: ▪ Abstract Semiconductor nanowires and nanotubes exhibit novel electronic and optical properties owing to their unique structural one-dimensionality and possible quantum confinement effects in two dimensions. With a broad selection of compositions and band structures, these one-dimensional semiconductor nanostructures are considered to be the critical components in a wide range of potential nanoscale device applications. To fully exploit these one-dimensional nanostructures, current research has focused on rational synthetic control of one-dimensional nanoscale building blocks, novel properties characterization and device fabrication based on nanowire building blocks, and integration of nanowire elements into complex functional architectures. Significant progress has been made in a few short years. This review highlights the recent advances in the field, using work from this laboratory for illustration. The understanding of general nanocrystal growth mechanisms serves as the foundation for the rational sy...
1,407 citations
TL;DR: In this article, the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides, are reviewed, along with the basic principle of X-ray diffusion of thin thin films, and some useful values needed in calculations, including elastic constants and lattice parameters.
Abstract: The III-nitrides include the semiconductors AlN, GaN and InN, which have band gaps spanning the entire UV and visible ranges. Thin films of III-nitrides are used to make UV, violet, blue and green light-emitting diodes and lasers, as well as solar cells, high-electron mobility transistors (HEMTs) and other devices. However, the film growth process gives rise to unusually high strain and high defect densities, which can affect the device performance. X-ray diffraction is a popular, non-destructive technique used to characterize films and device structures, allowing improvements in device efficiencies to be made. It provides information on crystalline lattice parameters (from which strain and composition are determined), misorientation (from which defect types and densities may be deduced), crystallite size and microstrain, wafer bowing, residual stress, alloy ordering, phase separation (if present) along with film thicknesses and superlattice (quantum well) thicknesses, compositions and non-uniformities. These topics are reviewed, along with the basic principles of x-ray diffraction of thin films and areas of special current interest, such as analysis of non-polar, semipolar and cubic III-nitrides. A summary of useful values needed in calculations, including elastic constants and lattice parameters, is also given. Such topics are also likely to be relevant to other highly lattice-mismatched wurtzite-structure materials such as heteroepitaxial ZnO and ZnSe.
925 citations